d a t a sh eet preliminary speci?cation file under discrete semiconductors, sc08b 1996 feb 06 discrete semiconductors blt71/8 uhf power transistor
1996 feb 06 2 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 features high efficiency very high gain internal pre-matched input low supply voltage. applications hand-held radio equipment in common emitter class-ab operation for 900 mhz communication band. description npn silicon planar epitaxial transistor encapsulated in a plastic sot96-1 (so8) smd package. pinning - sot96-1 pin symbol description 1, 8 b base 2, 4, 5, 7 e emitter 3, 6 c collector fig.1 simplified outline and symbol. handbook, halfpage 4 1 5 8 e c b mam227 quick reference data rf performance at t s 60 c in a common emitter test circuit. mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) cw, class-ab 900 4.8 1.2 3 11 3 55 typ. 13 typ. 63
1996 feb 06 3 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 limiting values in accordance with the absolute maximum rating system (iec 134). thermal characteristics note to the limiting values and thermal characteristics 1. t s is the temperature at the soldering point of the collector pin. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 16 v v ceo collector-emitter voltage open base - 8v v ebo emitter-base voltage open collector - 2.5 v i c collector current (dc) - 500 ma p tot total power dissipation t s =60 c; note 1 - 2.9 w t stg storage temperature - 65 +150 c t j operating junction temperature - 175 c symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point p tot = 2.9 w; t s =60 c; note 1 40 k/w symbol parameter conditions min. max. unit v (br)cbo collector-base breakdown voltage open emitter; i c = 0.5 ma 16 - v v (br)ceo collector-emitter breakdown voltage open base; i c =10ma 8 - v v (br)ebo emitter-base breakdown voltage open collector; i e = 0.1 ma 2.5 - v i ces collector leakage current v ce =8v; v be =0 - 0.1 ma h fe dc current gain v ce =5v; i c = 100 ma 25 - c c collector capacitance v cb = 4.8 v; i e =i e = 0; f = 1 mhz - 7pf c re feedback capacitance v ce = 4.8 v; i c = 0; f = 1 mhz - 5pf
1996 feb 06 4 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 application information rf performance at t s 60 c in a common emitter test circuit (note 1). note 1. t s is the temperature at the soldering point of the collector pin. ruggedness in class-ab operation the blt71/8 is capable of withstanding a load mismatch corresponding to vswr = 6 : 1 through all phases under the following conditions: f = 900 mhz; v ce = 6.5 v; i cq = 3 ma; p l = 1.2 w; t s 60 c. mode of operation f (mhz) v ce (v) i cq (ma) p l (w) g p (db) h c (%) cw, class-ab 900 4.8 3 1.2 3 11 3 55 typ. 13 typ. 63 fig.2 power gain and collector ef?ciency as functions of load power; typical values. f = 900 mhz; v ce = 4.8 v; i cq = 3 ma; t s 60 c. handbook, halfpage 0 0.4 2.0 16 12 4 0 8 mgd191 0.8 1.2 1.6 g p
(db) g p 80 h c
(%) 60 20 0 40 p l (w) h c
fig.3 load power as a function of input power; typical values. f = 900 mhz; v ce = 4.8 v; i cq = 3 ma; t s 60 c. handbook, halfpage 0 50 100 200 2.0 p l
(w) 0 1.6 mgd192 150 p in (mw) 1.2 0.8 0.4
1996 feb 06 5 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 fig.4 input impedance as a function of frequency (series components); typical values. v ce = 4.8 v; i cq = 3 ma; p l = 1.2 w; t amb =25 c. handbook, halfpage 800 850 900 f (mhz) 950 15 r i x i z i
( w ) 10 0 - 5 5 mgd193 fig.5 load impedance as a function of frequency (series components); typical values. v ce = 4.8 v; i cq = 3 ma; p l = 1.2 w; t amb =25 c. handbook, halfpage 800 850 900 950 10 0 8 mgd194 6 4 2 f (mhz) x l z l
( w ) r l fig.6 power gain as a function of frequency (series components); typical values. v ce = 4.8 v; i cq = 3 ma; p l = 1.2 w; t amb =25 c. handbook, halfpage 850 900 950 f (mhz) 1000 16 12 4 0 8 mgd195 g p
(db) fig.7 rf test print and definition of transistor impedance. handbook, halfpage z i z i z l 23.4 z l mgd196 dimensions in mm.
1996 feb 06 6 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 package outline fig.8 sot96-1. dimensions in mm. handbook, full pagewidth pin 1 index 0.7 0.3 0.49 0.36 1.27 0.25 m (8x) 1 4 5 0.1 s s 5.0 4.8 4.0 3.8 6.2 5.8 a 8 mbc180 - 1 0.25 0.19 0.7 0.6 1.75 1.35 1.45 1.25 detail a 1.0 0.5 0.25 0.10 0 to 8 o
1996 feb 06 7 philips semiconductors preliminary speci?cation uhf power transistor blt71/8 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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