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d a t a sh eet product speci?cation supersedes data of november 1992 file under discrete semiconductors, sc08b 1996 may 09 discrete semiconductors blt81 uhf power transistor
1996 may 09 2 philips semiconductors product speci?cation uhf power transistor blt81 features smd encapsulation gold metallization ensures excellent reliability. applications hand-held radio equipment in the 900 mhz communication band. description npn silicon planar epitaxial transistor encapsulated in a plastic sot223 smd package. pinning - sot223 pin symbol description 1 e emitter 2 b base 3 e emitter 4 c collector fig.1 simplified outline and symbol. handbook, halfpage e c b mam043 - 1 4 1 2 3 top view quick reference data rf performance at t s 60 c in a common emitter test circuit (see fig.7). mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) cw, class-b narrow band 900 7.5 1.2 3 6 3 60 6 1.2 typ. 6.5 typ. 77
1996 may 09 3 philips semiconductors product speci?cation uhf power transistor blt81 limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 20 v v ceo collector-emitter voltage open base - 9.5 v v ebo emitter-base voltage open collector - 2.5 v i c collector current (dc) - 500 ma i c(av) average collector current - 500 ma p tot total power dissipation t s = 110 c; note 1 - 2 w t stg storage temperature - 65 +150 c t j operating junction temperature - 175 c fig.2 dc soar. t s = 110 c. handbook, halfpage mrc094 10 - 1 10 2 1 1 10 i c (a) v ce (v) thermal characteristics note to the limiting values and thermal characteristics 1. t s is the temperature at the soldering point of the collector pin. symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point p tot = 2 w; t s = 110 c; note 1 32 k/w
1996 may 09 4 philips semiconductors product speci?cation uhf power transistor blt81 characteristics t j = 25 c unless otherwise speci?ed. note 1. measured under pulsed conditions: t p 200 m s; d 0.02. symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage open emitter; i c = 1 ma 20 - - v v (br)ceo collector-emitter breakdown voltage open base; i c = 10 ma 9.5 - - v v (br)ebo emitter-base breakdown voltage open collector; i e = 0.1 ma 2.5 - - v i ces collector leakage current v ce = 10 v; v be = 0 - - 0.1 ma h fe dc current gain v ce = 5 v; i c = 300 ma; note 1; 25 - - c c collector capacitance v cb = 7.5 v; i e = i e = 0; f = 1 mhz; - 2.7 4 pf c re feedback capacitance v ce = 7.5 v; i c = 0; f = 1 mhz - 1.7 3 pf fig.3 dc current gain as a function of collector current; typical values. v ce = 7.5 v; t p 200 m s; d 0.02; t j = 25 c. handbook, halfpage mrc090 0 20 40 60 80 100 0 100 200 300 400 i c (ma) h fe fig.4 collector capacitance as a function of collector-base voltage; typical values. i e = i e = 0; f = 1 mhz; t j = 25 c. handbook, halfpage mrc086 0 2 4 6 0 2 4 6 8 10 c c (pf) v cb (v)
1996 may 09 5 philips semiconductors product speci?cation uhf power transistor blt81 application information rf performance at t s 60 c in a common emitter test circuit (see note 1 and fig.7). note 1. t s is the temperature at the soldering point of the collector pin. ruggedness in class-ab operation the blt81 is capable of withstanding a load mismatch corresponding to vswr = 50 : 1 through all phases under the following conditions: f = 900 mhz; v ce = 9 v; p l = 1.2 w; t s 60 c. mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) cw, class-b narrow band 900 7.5 1.2 3 6 3 60 typ. 8 typ. 77 6 1.2 typ. 6.5 typ. 77 fig.5 power gain and collector ef?ciency as functions of load power; typical values. class-b; f = 900 mhz; t s 60 c. handbook, halfpage mrc088 0 2 4 6 8 10 0 20 40 60 (1) (2) 80 100 0 0.4 0.8 1.2 1.6 2.0 g p h c h c (%) (4) (3) g p (db) p l (w) (3) v ce = 7.5 v. (4) v ce = 6 v. (1) v ce = 7.5 v. (2) v ce = 6 v. fig.6 load power as a function of input power; typical values. class-b; f = 900 mhz; t s 60 c. handbook, halfpage mrc093 0 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 (1) (2) p l (w) p in (mw) (1) v ce = 7.5 v. (2) v ce = 6 v.
1996 may 09 6 philips semiconductors product speci?cation uhf power transistor blt81 test circuit information fig.7 common emitter test circuit for class-b operation at 900 mhz. handbook, full pagewidth l2 l3 r1 c3 c1 c5 l1 l4 c4 c7 mea899 v cc c12 c9 r2 l9 l7 c14 dut c13 c11 l6 c6 l5 l8 l10 c8 c10 c2 50 w input 50 w output
1996 may 09 7 philips semiconductors product speci?cation uhf power transistor blt81 list of components used in test circuit (see figs 7 and 8) notes 1. american technical ceramics type 100b or capacitor of same quality. 2. the striplines are on a double copper-clad printed-circuit board, with ptfe fibre-glass dielectric ( e r = 2.2); thickness 1 16 "; thickness of the copper sheet 35 m m. component description value dimensions catalogue no. c1, c14 multilayer ceramic chip capacitor; note 1 100 pf c2 multilayer ceramic chip capacitor; note 1 3 pf c3, c5, c11, c13 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09004 c4 multilayer ceramic chip capacitor; note 1 5.6 pf c6, c7, c10 multilayer ceramic chip capacitor; note 1 5.1 pf c8 multilayer ceramic chip capacitor; note 1 3.6 pf c9 multilayer ceramic chip capacitor; note 1 220 pf c12 multilayer ceramic chip capacitor; 1 nf l1 stripline; note 2 50 w length 26.6 mm width 4.85 mm l2 10 turns enamelled 0.6 mm copper wire 250 nh int. dia. 4.5 mm leads 2 5 mm l3, l9 grade 3b ferroxcube wideband hf choke 4312 020 36640 l4 stripline; note 2 50 w length 18 mm width 4.85 mm l5 stripline; note 2 75 w length 3.5 mm width 2.5 mm l6 stripline; note 2 50 w length 10 mm width 4.85 mm l7 4 turns enamelled 0.6 mm copper wire 65 nh int. dia. 4.5 mm leads 2 5 mm l8 stripline; note 2 50 w length 15 mm width 4.85 mm l10 stripline; note 2 50 w length 24.6 mm width 4.85 mm r1, r2 metal ?lm resistor 10 w , 0.25 w
1996 may 09 8 philips semiconductors product speci?cation uhf power transistor blt81 fig.8 printed-circuit board and component lay-out for 900 mhz class-b test circuit in fig.7. dimensions in mm. the components are situated on one side of the copper-clad ptfe fibre-glass board, the other side is unetched and serves as a ground plane. earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. handbook, full pagewidth strap strap strap strap rivets (14x) mounting screws (8x) 140 80 mea898 l9 c12 r2 l7 l6 c9 r1 l3 v cc c1 c10 c14 l10 l8 c8 c11 c13 c7 c6 l5 l4 c5 c3 l1 c2 l2 c4
1996 may 09 9 philips semiconductors product speci?cation uhf power transistor blt81 fig.9 input impedance as a function of frequency (series components); typical values. class-b; v ce = 7.5 v; p l = 1.2 w; t s 60 c. handbook, halfpage mrc091 0 2 4 6 8 10 800 840 880 920 960 1000 f (mhz) z i ( w ) r i x i fig.10 load impedance as a function of frequency (series components); typical values. class-b; v ce = 7.5 v; p l = 1.2 w; t s 60 c. handbook, halfpage mrc092 0 4 8 12 16 20 800 840 880 920 960 1000 f (mhz) x l r l z l ( w ) fig.11 power gain as a function of frequency; typical values. class-b; v ce = 7.5 v; p l = 1.2 w; t s 60 c. handbook, halfpage mrc089 0 2 4 6 8 10 800 840 880 920 960 1000 f (mhz) g p (db) fig.12 definition of transistor impedance. handbook, halfpage mba451 z i z l
1996 may 09 10 philips semiconductors product speci?cation uhf power transistor blt81 package outline fig.13 sot223. dimensions in mm. handbook, full pagewidth 6.7 6.3 0.95 0.85 2.3 0.80 0.60 4.6 3.1 2.9 3.7 3.3 7.3 6.7 a b 0.2 a 1.80 max 16 16 o max 10 o max 0.10 0.01 0.32 0.24 4 1 2 3 msa035 - 1 (4x) 0.1 b m m s seating plane 0.1 s o
1996 may 09 11 philips semiconductors product speci?cation uhf power transistor blt81 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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(0212) 282 6707 ukraine: philips ukraine, 2a akademika koroleva str., office 165, 252148 kiev, tel. 380-44-4760297, fax. 380-44-4766991 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. (0181) 730-5000, fax. (0181) 754-8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. (800) 234-7381, fax. (708) 296-8556 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. (381) 11 825 344, fax. (359) 211 635 777 internet: http://www .semiconductors.philips.com/ps/ for all other countries apply to: philips semiconductors, marketing & sales communications, building be-p, p .o. box 218, 5600 md eindhoven, the netherlands, fax. +31-40-2724825 scds48 ? philips electronics n.v . 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. printed in the netherlands 127061/1200/02/pp12 date of release: 1996 may 09 document order number: 9397 750 00835

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