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d a t a sh eet product speci?cation file under discrete semiconductors, sc08b september 1991 discrete semiconductors blu86 uhf power transistor
september 1991 2 philips semiconductors product speci?cation uhf power transistor blu86 features smd encapsulation emitter-ballasting resistors for optimum temperature profile gold metallization ensures excellent reliability. description npn silicon planar epitaxial transistor encapsulated in a sot223 surface mounted envelope and designed primarily for use in mobile radio equipment in the 900 mhz communications band. pinning - sot223 pin description 1 emitter 2 base 3 emitter 4 collector quick reference data rf performance at t s 60 c in a common emitter class-b test circuit (see note 1). note 1. t s = temperature at soldering point of collector tab. pin configuration mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) c.w. narrow band 900 12.5 1 > 7 > 55 handbook, halfpage e c b mbb012 fig.1 simplified outline and symbol. h alfpage 4 123 msb002 - 1 top view september 1991 3 philips semiconductors product speci?cation uhf power transistor blu86 limiting values in accordance with the absolute maximum system (iec 134). note 1. t s = temperature at soldering point of collector tab. thermal resistance symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 32 v v ceo collector-emitter voltage open base - 16 v v ebo emitter-base voltage open collector - 3v i c , i c(av) collector current dc or average value - 200 ma i cm collector current peak value; f > 1 mhz - 600 ma p tot total power dissipation f > 1 mhz; t s = 129 c (note 1) - 2w t stg storage temperature range - 65 150 c t j operating junction temperature - 175 c symbol parameter conditions max. unit r th j-s(dc) from junction to soldering point p tot =2w; t s = 129 c 23 k/w fig.2 dc soar. handbook, halfpage mra241 10 10 2 10 2 10 3 1 10 i c (ma) v ce (v) t s = 129 o c september 1991 4 philips semiconductors product speci?cation uhf power transistor blu86 characteristics t j = 25 c. symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage open emitter; i c = 2.5 ma 32 -- v v (br)ceo collector-emitter breadown voltage open base; i c =10ma 16 -- v v (br)ebo emitter-base breakdown voltage open collector; i e = 0.5 ma 3 -- v i ces collector-emitter leakage current v be =0; v ce =16v -- 1ma h fe dc current gain v ce =10v; i c = 150 ma 25 -- e sbr second breakdown energy l = 25 mh; r be =10 w ; f = 50 hz 0.3 -- mj c c collector capacitance v cb = 12.5 v; i e =i e =0; f = 1 mhz - 2.2 2.6 pf c re feedback capacitance v ce = 12.5 v; i c =0; f = 1 mhz - 1.2 1.8 pf fig.3 dc current gain as a function of collector current; typical values. handbook, halfpage mra237 0 20 40 60 80 100 0 200 400 i c (ma) 600 h fe 10 v v ce = 12.5 v fig.4 collector capacitance as a function of collector-base voltage, typical values. handbook, halfpage 0 0 1 2 3 4 5 510 v cb (v) c c (pf) 15 mra234 september 1991 5 philips semiconductors product speci?cation uhf power transistor blu86 application information rf performance at t s 60 c; in a common emitter class-b test circuit (see note 1). note 1. t s = temperature at soldering point of collector tab. mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) c.w. narrow band 900 12.5 1 > 7 typ. 7.7 > 55 typ. 66 fig.5 gain and efficiency as functions of load power, typical values. class-b operation; v ce = 12.5 v ; f = 900 mhz. handbook, halfpage mra235 0 2 4 6 8 10 0 20 40 60 80 100 0 0.4 0.8 1.2 p l (w) 1.6 g p g p (db) h c (%) h c ruggedness in class-b operation the blu86 is capable of withstanding a full load mismatch corresponding to vswr = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 v, f = 900 mhz and t s 60 c, where t s is the temperature at the soldering point of the collector tab. fig.6 load power as a function of drive power, typical values. class-b operation; v ce = 12.5 v ; f = 900 mhz. handbook, halfpage mra240 100 300 500 0 200 p l (w) 400 p in (mw) 0 0.5 1 1.5 2 september 1991 6 philips semiconductors product speci?cation uhf power transistor blu86 list of components (see test circuit) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. the striplines are mounted on a double copper-clad printed circuit board, with ptfe fiber-glass dielectric ( e r = 2.2); thickness 1 16 inch. component description value dimensions catalogue no. c1, c6 multilayer ceramic chip capacitor (note 1) 100 pf c2, c3, c4, c5 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09001 c7 multilayer ceramic chip capacitor (note 1) 220 pf c8 multilayer ceramic chip capacitor (note 1) 1nf c9 63 v electrolytic capacitor 2.2 m f l1 stripline (note 2) 50 w 17 mm 4.7 mm l2 stripline (note 2) 50 w 5 mm 4.7 mm l3 stripline (note 2) 50 w 32 mm 4.7 mm l4 stripline (note 2) 50 w 20 mm 4.7 mm l5, l7 6 turns enamelled 0.8 mm copper wire int. dia. 3 mm l6, l8 grade 3b1 ferroxcube wideband hf choke 4312 020 36640 r1, r2 0.25 w metal ?lm resistor 10 w , 5% fig.7 class-b test circuit at f = 900 mhz. handbook, full pagewidth mbc090 50 w input 50 w output c9 + v cc c8 c7 r2 l8 l7 c6 l4 tut l5 l6 r1 c2 c1 l2 c5 c3 l1 c4 l3 september 1991 7 philips semiconductors product speci?cation uhf power transistor blu86 fig.8 component layout for 900 mhz class-b test circuit. the circuit and components are situated on one side of a copper-clad ptfe fibre-glass board; the other side is unetched and serves as a ground plane. earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. handbook, full pagewidth strap strap strap strap rivets (14x) mounting screws (8x) 140 mm 80 mm mbc089 c5 c6 l8 c9 c8 r2 l7 l4 c4 l3 l5 c7 r1 l6 c3 c2 v cc c1 l2 l1 september 1991 8 philips semiconductors product speci?cation uhf power transistor blu86 fig.9 input impedance (series components) as a function of frequency, typical values. class-b operation; v ce = 12.5 v; p l =1w. handbook, halfpage mra238 840 z i ( w ) r i x i 920 1000 800 880 960 f (mhz) 0 2 4 6 8 10 12 14 fig.10 load impedance (series components) as a function of frequency, typical values. class-b operation; v ce = 12.5 v; p l =1w. handbook, halfpage mra239 840 920 1000 800 880 z l ( w ) r l x l 960 f (mhz) 0 10 20 30 40 50 fig.11 definition of transistor impedance. handbook, halfpage mba451 z i z l fig.12 power gain as a function of frequency, typical values. class-b operation; v ce = 12.5 v; p l =1w. handbook, halfpage mra236 1000 800 840 880 g p (db) 920 f mhz 0 2 4 6 8 10 12 960 september 1991 9 philips semiconductors product speci?cation uhf power transistor blu86 package outline unit a 1 b p cd e e 1 h e l p qy w v references outline version european projection issue date iec jedec eiaj mm 0.10 0.01 1.8 1.5 0.80 0.60 b 1 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.1 0.2 dimensions (mm are the original dimensions) sot223 96-11-11 97-02-28 w m b p d b 1 e 1 e a a 1 l p q detail x h e e v m a a b b c y 0 2 4 mm scale a x 13 2 4 plastic surface mounted package; collector pad for good heat transfer; 4 leads sot223 september 1991 10 philips semiconductors product speci?cation uhf power transistor blu86 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation. |
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