? 2001 in?eon technologies corp. ?optoelectronics division ?san jose, ca www.in?eon.com/opto ?1-888-in?eon (1-888-463-4636) 2?1 march 7, 2000-20 characteristics t a =25 c parameters sym min. typ. max. unit condition emitter forward voltage v f 1.2 1.5 v i f =10 ma reverse current i r 10 a v r =3.0 v capacitance c o ?0 pf v r =0, f=1.0 mhz detector forward blocking voltage v dm 400 v r gk =10 k ? t a =100 c i d =150 a reverse blocking voltage v dm 400 v on-state voltage v t 1.1 1.3 v i t =300 ma holding current i h 500 ar gk =27 k ? v fx =50 v gate trigger voltage v gt 0.6 1.0 v v fx =100 v r gk =27 k ? r l =10 k ? forward leakage current i r 150 ar gk =10 k ? v rm =400 v i f =0, t a =100 c reverse leakage current i r 150 ar gk =10 k ? v rx =400 v i f =0, t a =100 c gate trigger current i gt ?050 av fx =100 v r gk =27 k ? , r l =10 k ? capacitance anode to gate gate to cathode 20 350 pf pf v=0, f=1.0 mhz package turn-0n current h11c4/h11c5 h11c6 i ft 20 30 ma ma v dm =50 v r gk =10 k ? turn-0n current h11c4/h11c5 h11c6 i ft 5.0 7.0 11 14 ma ma v dm =100 v r gk =27 k ? .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3 9 .300 .347 (7.62 8.81) 4 typ. dimensions in inches (mm) 1 2 3 6 5 4 gate anode cathode anode cathode nc features turn on current ( i ft ), 5.0 ma typical gate trigger current ( i gt ), 20 ma typical surge anode current, 5.0 a blocking voltage, 400 v gate trigger voltage ( v gt ), 0.6 v typical isolation voltage, 5300 v rms solid state reliability standard dip package underwriters lab file #e52744 description the h11c4/h11c5/h11c6 are optically coupled scrs with a gallium arsenide infrared emitter and a silicon photo scr sensor. switching can be achieved while maintaining a high degree of isola- tion between triggering and load circuits. these optocouplers can be used in scr triac and solid state relay applications where high blocking volt- ages and low input current sensitivity are required. the h11c4 and h11c5 are identical and have a maximum turn-on-current of 11 ma. the h11c6 has a maximum of 14 ma. maximum ratings emitter peak reverse voltage ...................................... 6.0 v continuous forward current ..........................60 ma peak forward current (1.0 ms, 1% duty cycle).....3.0 a power dissipation at 25 c........................... 100 mw derate linearly from 25 c ..................... 1.33 mw/ c detector reverse gate voltage....................................... 6.0 v anode voltage (dc or ac peak) ..................... 400 v rms forward current...................................300 ma surge anode current (10 ms duration) ............5.0 a peak forward current (100 s, 1% duty cycle) .. 10 a surge gate current (5.0 ms duration)..........200 ma power dissipation, 25 c case ................... 1000 mw derate linearly from 25 c ..................... 13.3 mw/ c package isolation test voltage............................... 5300 v rms (between emitter and detector referred to standard climate23 c/50%rh, din 50014) creepage .................................................. 7.0 mm clearance .................................................. 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 ....................... 175 isolation resistance v io =500 v, t a =25 c................................ 10 12 ? v io =500 v, t a =100 c.............................. 10 11 ? total package dissipation ........................... 400 mw derate linearly from 25 c ....................... 5.3 mw/ c operating temperature range...... 55 c to +100 c storage temperature range ......... 55 c to +150 c lead soldering time at 260 c ..................... 10 sec. h11c4/h11c5/h11c6 photo scr optocoupler
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