? 2000 ixys all rights reserved 1 - 2 v rsm v (br)min ? v rrm standard avalanche v v v types types 900 800 ds 9-08f 1300 1300 1200 ds 9-12f dsa 9-12f 1700 1750 1600 dsa 9-16f 1900 1950 1800 dsa 9-18f only for avalanche diodes symbol test conditions maximum ratings i f(rms) t vj = t vjm 18 a i f(avm) t case = 150 c; 180 sine 11 a p rsm dsa types, t vj = t vjm , t p = 10 s 4.5 kw i fsm t vj = 45 c; t = 10 ms (50 hz), sine 250 a v r = 0 t = 8.3 ms (60 hz), sine 265 a t vj = t vjm t = 10 ms (50 hz), sine 200 a v r = 0 t = 8.3 ms (60 hz), sine 220 a i 2 t t vj = 45 c t = 10 ms (50 hz), sine 310 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 295 a 2 s t vj = t vjm t = 10 ms (50 hz), sine 200 a 2 s v r = 0 t = 8.3 ms (60 hz), sine 190 a 2 s t vj -40...+180 c t vjm 180 c t stg -40...+180 c m d mounting torque 2.2-2.8 nm 19-25 lb.in. weight 5g v rrm = 800-1800 v i f(rms) = 18 a i f(av)m = 11 a features international standard package, jedec do-203 aa planar glassivated chips applications supplies for dc power equipment dc supply for pwm inverter field supply for dc motors battery dc power supplies advantages space and weight savings simple mounting improved temperature and power cycling reduced protection circuits symbol test conditions characteristic values i r t vj = t vjm ; v r = v rrm 3ma v f i f = 36 a; t vj = 25 c 1.4 v v t0 for power-loss calculations only 0.85 v r t t vj = t vjm 15 m r thjc dc current 2.0 k/w 180 sine 2.17 k/w r thjh dc current 3.0 k/w d s creepage distance on surface 2.0 mm d a strike distance through air 2.0 mm a max. allowable acceleration 100 m/s 2 dimensions in mm (1 mm = 0.0394") data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions ds 9 dsa 9 rectifier diode avalanche diode a c do-203 aa a = anode c = cathode c a m5
? 2000 ixys all rights reserved 2 - 2 10 -3 10 -2 10 -1 10 0 10 1 0 50 100 150 200 250 300 23456789 110 200 400 600 800 100 1000 0.00.20.40.60.81.01.21.41.6 0 10 20 30 40 50 0 5 10 15 20 0 5 10 15 20 25 0 50 100 150 200 0 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 0 1 2 3 4 5 i 2 t i fsm a i f a v f t s t ms p f w i f(av)m a t amb c t s z thjh k/w a 2 s 0 50 100 150 200 250 0 5 10 15 20 25 i f(av)m t c a c v ds 9 dsa 9 fig. 6 transient thermal impedance junction to heatsink fig. 1 forward characteristics fig. 2 surge overload current i fsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 ms) r thjh for various conduction angles d: dr thjh (k/w) dc 3.0 180 3.35 120 3.56 60 4.0 30 4.64 constants for z thjh calculation: ir thi (k/w) t i (s) 1 0.095 0.00032 2 0.515 0.0102 3 1.39 0.360 4 1.0 2.30 fig. 4 power dissipation versus forward current and ambient temperature fig. 5 max. forward current at case temperature typ. lim. t vj = 180c t vj = 25c 50hz, 80%v rrm t vj = 45c t vj = 180c v r = 0 v t vj =45c t vj =180c dc d = 180 sin d = 120 d = 60 d = 30 30 60 120 180 dc r thja : 8.3 k/w 13 k/w (cu80x80) 18 k/w dc 180 sin 120 60 30 ase
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