1 transistor 2sb0642 (2sb642) silicon pnp epitaxial planer type for low-power general amplification features high foward current transfer ratio h fe . m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:sc?1 3:emitter m type mold package 6.9 0.1 0.55 0.1 0.45 0.05 1.0 0.1 1.0 2.5 0.1 1.0 1.5 1.5 r0.9 r0.9 r0.7 0.4 0.85 3.5 0.1 2.0 0.2 2.4 0.2 1.25 0.05 4.1 0.2 4.5 0.1 2.5 2.5 1 2 3 symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings ?0 ?0 ? ?00 ?00 400 150 ?5 ~ +150 unit v v v ma ma mw ?c ?c electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance symbol i cbo i ceo v cbo v ceo v ebo h fe * v ce(sat) f t c ob conditions v cb = ?0v, i e = 0 v ce = ?0v, i b = 0 i c = ?0 a, i e = 0 i c = ?ma, i b = 0 i e = ?0 a, i c = 0 v ce = ?0v, i c = ?ma i c = ?00ma, i b = ?0ma v cb = ?0v, i e = 2ma, f = 200mhz v cb = ?0v, i e = 0, f = 1mhz min ?0 ?0 ? 160 typ 80 3.5 max ? ? 460 ? unit na a v v v v mhz pf * h fe rank classification rank q r s h fe 160 ~ 260 210 ~ 340 290 ~ 460 note.) the part number in the parenthesis shows conventional part number.
2 transistor 2sb0642 0 160 40 120 80 140 20 100 60 0 500 400 300 200 100 450 350 250 150 50 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0 20 16 4 12 8 0 60 50 40 30 20 10 ta=25 ? c i b = 300 a 250 a 200 a 150 a 100 a 50 a collector to emitter voltage v ce ( v ) collector current i c ( ma ) 0 450 150 300 0 60 50 40 30 20 10 v ce = 5v ta=25 ? c base current i b ( a ) collector current i c ( ma ) 0 1.8 0.6 1.2 0 400 300 100 250 350 200 50 150 v ce = 5v ta=25 ? c base to emitter voltage v be ( v ) base current i b ( a ) 0 2.0 1.6 0.4 1.2 0.8 0 240 200 160 120 80 40 v ce = 5v ta=75 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( ma ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 25 ? c 25 ? c ta=75 ? c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 1 10 100 1000 3 30 300 0 600 500 400 300 200 100 v ce = 10v ta=75 ? c 25 ? c 25 ? c collector current i c ( ma ) forward current transfer ratio h fe 0.1 1 10 100 0.3 3 30 0 160 120 40 100 140 80 20 60 v cb = 10v ta=25 ? c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 8 6 2 5 7 4 1 3 i e =0 f=1mhz ta=25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) p c ta i c v ce i c i b i b v be i c v be v ce(sat) i c h fe i c f t i e c ob v cb
3 transistor 2sb0642 0 30 25 20 5 15 10 0 6 5 4 3 2 1 i c = 1ma f=10.7mhz ta=25 ? c collector to emitter voltage v ce ( v ) common emitter reverse transfer capacitance c re ( pf ) 0.01 0.1 1 10 0.03 0.3 3 0 6 5 4 3 2 1 v cb = 5v f=1khz r g =2k ? ta=25 ? c emitter current i e ( ma ) noise figure nf ( db ) 0.1 0.3 1 3 10 0 20 16 12 8 4 18 14 10 6 2 v cb = 5v r g =50k ? ta=25 ? c f=100hz 10khz 1khz emitter current i e ( ma ) noise figure nf ( db ) 0.1 0.3 1 3 10 1 300 100 30 10 3 v ce = 5v f=270hz ta=25 ? c h fe h oe ( s) h ie (k ? ) h re ( ? 10 4 ) emitter current i e ( ma ) h parameter 1 3 10 30 100 1 300 100 30 10 3 i e =2ma f=270hz ta=25 ? c h fe h oe ( s) h ie (k ? ) h re ( ? 10 4 ) collector to emitter voltage v ce ( v ) h parameter 0 150 125 100 25 75 50 1 100 10 30 3 v cb = 10v ambient temperature ta ( ? c ) i cbo ( ta ) i cbo ( ta=25 ? c ) c re v ce nf i e nf i e h parameter i e h parameter v ce i cbo ta
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