050-7420 rev - 7-2002 APT30GP60JD1 600v a new generation of high voltage power igbts. using punch-through technology and a proprietary metal gate, this igbt has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. in many cases, the power mos 7 ? igbt provides a lower cost alternative to a power mosfet. ? low conduction loss ? 100 khz operation @ 400v, 15a ? low gate charge ? 200 khz operation @ 400v, 24a ? ultrafast tail current shutoff ? ssoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.6 2.7 2.4 400 3000 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 400a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 30a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l APT30GP60JD1 600 20 30 67 31 120 120a @ 600v 245 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. ?
g c e sot-227 g e e c isotop ? "ul recognized"
050-7420 rev - 7-2002 APT30GP60JD1 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 30a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc (peak) = 400v v ge = 15v i c = 30a r g = 5 ? t j = +25c inductive switching (125c) v cc (peak) = 400v v ge = 15v i c = 30a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching soa turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 3060 290 10 7 85 20 27 120 11 20 38 32 230 406 156 11 19 60 69 230 600 314 unit pf v nc a ns j ns j unit c/w gm min typ max .51 2.3 29.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7420 rev - 7-2002 typical preformance curves t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce =480v v ce =300v v ce =120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction trmperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature i c = 30a t j = 25c i c= 60a i c= 30a i c= 15a i c= 60a i c= 30a i c= 15a 50 45 40 35 30 25 20 15 10 5 0 120 100 80 60 40 20 0 7 6 5 4 3 2 1 0 1.2 1.15 1.10 1.05 1.0 0.95 0.90 0.85 0.8 bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) APT30GP60JD1 0123456 0123456 01 23 456 78910 0102030405060708090100 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 50 45 40 35 30 25 20 15 10 5 0 16 14 12 10 8 6 4 2 0 4 3.5 3 2.5 2 1.5 1 0.5 0 90 80 70 60 50 40 30 20 10 0
050-7420 rev - 7-2002 APT30GP60JD1 t j = 125c,v ge = 10v t j = 125c, v ge = 10v or 15v v ce = 400v r g = 5 ? l = 100 h v ge = 15v v ge = 10v v ge =15v,t j =125c v ce = 400v t j = 25c, t j =125c r g = 5 ? l = 100 h r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 10 20 30 40 50 60 10 20 30 40 50 60 10 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 10 20 30 40 50 60 10 20 30 40 50 60 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 v ge =10v,t j =125c v ge =15v,t j =25c v ge =10v,t j =25c t j = 25c,v ge = 15v t j = 25c,v ge = 10v t j = 25c, v ge = 10v or 15v 80 70 60 50 40 30 20 10 0 100 80 60 40 20 0 1000 800 600 400 200 0 2000 1500 1000 500 0 t j = 125c,v ge = 15v t j = 125c, v ge = 10v or 15v v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? v ce = 400v v ge = +15v r g = 5 ? e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a e on2, 60a e off, 60a e on2, 30a e off, 30a e on2, 15a e off, 15a v ce = 400v v ge = +15v r g = 5 ? t j = 125c,v ge = 10v t j = 125c,v ge = 15v t j = 25c,v ge = 10v t j = 25c, v ge = 10v or 15v t j = 25c,v ge = 15v 25 20 15 10 5 0 70 60 50 40 30 20 10 0 2000 1500 1000 500 0 2500 2000 1500 1000 500 0
050-7420 rev - 7-2002 15 20 25 30 35 40 45 50 55 60 0.51 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.05 d=0.5 0.2 0.02 0.01 0.1 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 140 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area i c , collector current (a) figure 20, operating frequency vs collector current c res c ies c oes typical preformance curves t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? 10,000 5,000 1,000 500 100 50 10 5 0 0 10 20 30 40 50 0 100 200 300 400 500 600 700 200 100 50 10 5 1 .5 .1 APT30GP60JD1 max max1 max 2 max1 d(on)rd(off)f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? =
050-7420 rev - 7-2002 APT30GP60JD1 *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions t d(off) 90% 90% t f 10% switching energy collector current collector voltage gate voltage t j = 125 c 0 5 % 5 % t r t d(on) gate voltage collector voltage 10 % collector current switching energy 10% 90% t j = 125 c i c a d.u.t. apt 30gp60jd1 v ce figure 21, inductive switching test circuit 18v v cc
050-7420 rev - 7-2002 characteristic / test conditions maximum average forward current (t c = 90c, duty cycle = 0.5) rms forward current non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 30a maximum forward voltage i f = 15a, t j = 125c i f = 30a, t j = 125c static electrical characteristics unit amps unit volts min typ max 2.7 1.7 2.2 APT30GP60JD1 15 25 110 maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode APT30GP60JD1 apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal.
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