1mbi 400s-120 1-pack igbt 1200v 1x400a igbt module ( s-series ) features ? npt-technology ? square sc soa at 10 x i c ? high short circuit withstand-capability ? small temperature dependence of the turn-off switching loss ? low losses and soft switching applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply outline drawing maximum ratings and characteristics equivalent circuit ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 1200 gate -emitter voltage v ges 20 v continuous 25c / 80c i c 600 / 400 collector 1ms 25c / 80c i c pulse 1200 / 800 current continuous -i c 400 1ms -i c pulse 800 a max. power dissipation p c 3100 w operating temperature t j +150 storage temperature t stg -40 +125 c isolation voltage * 1 a.c. 1min. v is 2500 v mounting * 2 3.5 terminals * 2 4.5 screw torque terminals * 2 1.7 nm note: 1*: all terminals should be connected together when isolation test w ill be done. 2*: recommendable value: mounting 2.5 3.5 nm (m5) or (m6) ; terminal 3.5 4.5 nm (m6), 1.3 1.7 nm (m4) ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =1200v 4.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 800 na gate-emitter threshold voltage v ge(th) v ge =20v i c =400ma 5.5 7.2 8.5 t j = 25c 2.3 2.6 v collector-emitter saturation voltage v ce(sat) v ge =15v i c =400a t j =125c 2.8 input capacitance c ies v ge =0v 48?000 output capacitance c oes v ce =10v 10?000 pf reverse transfer capacitance c res f=1mhz 8?800 t on v cc = 600v 0.35 1.2 turn-on time t r,x i c = 400a 0.25 0.6 t r,i v ge = 15v 0.10 t off r g =1.8 ? 0.45 1.0 turn-off time t f inductive load 0.08 0.3 s t j = 25c 2.3 3.0 diode forward on-voltage v f i f =400a; v ge =0v t j =125c 2.0 v reverse recovery time t rr i f =400a 350 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 0.04 thermal resistance r th(j-c) diode 0.12 c/w r th(c-f) with thermal compound 0.0125
1mbi 400s-120 1-pack igbt 1200v 1x400a
1mbi 400s-120 1-pack igbt 1200v 1x400a
1mbi 400s-120 1-pack igbt 1200v 1x400a specification is subject to change without notice september 2000
|
