1 transistor 2sa1532 silicon pnp epitaxial planer type for high-frequency amplification complementary to 2sc3930 n features l high transition frequency f t . l s-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i c p c t j t stg ratings C30 C20 C5 C30 150 150 C55 ~ +150 unit v v v ma mw ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current emitter cutoff current forward current transfer ratio transition frequency collector to emitter saturation voltage base to emitter voltage noise figure reverse transfer impedance common emitter reverse transfer capacitance symbol i cbo i ceo i ebo h fe * f t v ce(sat) v be nf z rb c re conditions v cb = C10v, i e = 0 v ce = C20v, i b = 0 v eb = C5v, i c = 0 v ce = C10v, i c = C1ma v cb = C10v, i e = 1ma, f = 200mhz i c = C10ma, i b = C1ma v ce = C10v, i c = C1ma v cb = C10v, i e = 1ma, f = 5mhz v cb = C10v, i e = 1ma, f = 2mhz v ce = C10v, i c = C1ma f = 10.7mhz min 70 150 typ 300 C 0.1 C 0.7 2.8 22 1.2 max C 0.1 C100 C10 220 4.0 60 2.0 unit m a m a mhz v v db w pf * h fe rank classification rank b c h fe 70 ~ 140 110 ~ 220 marking symbol eb ec marking symbol : e unit: mm 1:base 2:emitter eiaj:scC70 3:collector sCmini type package 2.1 0.1 1.3 0.1 0.9 0.1 0.7 0.1 0.3 +0.1 ? 0.15 +0.1 ?.05 2.0 0.2 1.25 0.1 0.425 0.425 1 3 2 0.65 0.2 0.65 0 to 0.1 0.2 0.1
2 transistor 2sa1532 0 160 40 120 80 140 20 100 60 0 240 200 160 120 80 40 ambient temperature ta ( ?c ) collector power dissipation p c ( mw ) 0 ?0 ? ? ? ? 0 ?0 ?5 ?0 ?5 ?0 ? ta=25?c i b =?50 m a ?00 m a ?50 m a ?00 m a ?0 m a collector to emitter voltage v ce ( v ) collector current i c ( ma ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 0 120 100 80 60 40 20 v ce =?0v ta=75?c 25?c ?5?c collector current i c ( ma ) forward current transfer ratio h fe ?0.1 ? ?0 ?00 ?0.3 ? ?0 0 6 5 4 3 2 1 f=1mhz i e =0 ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) ? ? ?0 ?0 ?00 0 5 4 3 2 1 i c =?ma f=10.7mhz ta=25?c collector to emitter voltage v ce ( v ) common emitter reverse transfer capacitance c re ( pf ) 0.1 1 10 100 0.3 3 30 0 600 500 400 300 200 100 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) ?0.1 ? ?0 ?00 ?0.3 ? ?0 0 24 20 16 12 8 4 v ce =?0v f=100mhz ta=25?c collector current i c ( ma ) power gain pg ( db ) 0.1 0.3 1 3 10 0 5 4 3 2 1 v cb =?0v f=100mhz ta=25?c emitter current i e ( ma ) noise figure nf ( db ) p c ta i c v ce v ce(sat) i c h fe i c c ob v cb c re v ce f t i e pg i c nf i e
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