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  power transistors 1 2sb1417, 2sb1417a 2sb1417, 2sb1417a 2sb1417, 2sb1417a 2sb1417, 2sb1417a 2sb1417, 2sb1417a silicon pnp epitaxial planar type for power amplification complementary to 2sd2137 and 2sd2137a  features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector to emitter saturation voltage v ce(sat) ? allowing automatic insertion with radial taping  absolute maximum ratings t c = 25 c 1 : base 2 : collector 3 : emitter mt-4 (mt4 type package) unit: mm  electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sb1417 v cbo ? 60 v voltage 2sb1417a ? 80 collector to 2sb1417 v ceo ? 60 v emitter voltage 2sb1417a ? 80 emitter to base voltage v ebo ? 6v peak collector current i cp ? 5a collector current i c ? 3a collector power t c = 25 cp c 15 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sb1417 i ces v ce = ? 60 v, v be = 0 ? 100 a current 2sb1417a v ce = ? 80 v, v be = 0 ? 100 collector cutoff 2sb1417 i ceo v ce = ? 30 v, i b = 0 ? 100 a current 2sb1417a v ce = ? 60 v, i b = 0 ? 100 emitter cutoff current i ebo v eb = ? 6 v, i c = 0 ? 100 a collector to emitter 2sb1417 v ceo i c = ? 30 ma, i b = 0 ? 60 v voltage 2sb1417a ? 80 forward current transfer ratio h fe1 * v ce = ? 4 v, i c = ? 1 a 70 250 h fe2 v ce = ? 4 v, i c = ? 3 a 10 base to emitter voltage v be v ce = ? 4 v, i c = ? 3 a ? 1.8 v collector to emitter saturation voltage v ce(sat) i c = ? 3 a, i b = ? 0.375 a ? 1.2 v transition frequency f t v ce = ? 5 v, i c = ? 0.2 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 1 a, i b1 = ? 0.1 a, i b2 = 0.1 a, 0.3 s storage time t stg v cc = ? 50 v 1.0 s fall time t f 0.2 s rank q p h fe1 70 to 150 120 to 250 ordering can be made by the common rank (pq rank h fe1 = 70 to 250) in the rank classification. 10.0 ?.2 0.65 ?.1 0.35 ?.1 2.5 ?.2 123 0.65 ?.1 1.2 ?.1 1.48 ?.2 2.25 ?.2 c 1.0 0.55 ?.1 0.55 ?.1 2.5 ?.2 1.05 ?.1 13.0 ?.2 4.2 ?.2 18.0 ?.5 solder dip 5.0 ?.1 2.5 ?.1 90? 1.0 ?.2 note) * : rank classification
power transistors 2 2sb1417, 2sb1417a i c ? v be h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb t on , t stg , t f ? i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 0 12 10 8 2 6 4 0 6 5 4 3 2 1 t c =25 ? c 10ma 20ma 30ma 40ma 50ma 60ma 70ma 80ma 90ma i b = 100ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =8 25 ? c 100 ? c t c = 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 6 5 4 3 2 1 v ce = 4v t c =100 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 10 30 100 300 1000 3000 10000 30000 100000 v ce = 4v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce = 5v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 4 1 3 2 0.01 0.03 0.1 0.3 1 3 10 30 100 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =5 (i b1 = i b2 ) v cc = 200v t c =25 ? c collector current i c ( a ) switching time t on ,t stg ,t f ( s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 t=1ms i cp i c 10ms 2sb1417a 2sb1417 non repetitive pulse t c =25 ? c dc collector to emitter voltage v ce ( v ) collector current i c ( a )
power transistors 3 2sb1417, 2sb1417a r th(t) ? t 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 0.1 1 10 100 10000 1000 (1) (2) note: r th was measured at ta=25 ? c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ? c/w )
please read the following notes before using the datasheets a. these materials are intended as a reference to assist customers with the selection of panasonic semiconductor products best suited to their applications. due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. b. panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. therefore, panasonic will not assume any liability for any damages arising from any errors etc. that may ap- pear in this material. c. these materials are solely intended for a customer's individual use. therefore, without the prior written approval of panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the internet or in any other way, is prohibited. request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese govern- ment if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative character- istics and applied circuit examples of the products. it does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) the products described in this material are intended to be used for standard applications or gen- eral electronic equipment (such as office equipment, communications equipment, measuring in- struments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (4) the products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. at the final stage of your design, purchas- ing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) when using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) no part of this material may be reprinted or reproduced by any means without written permission from our company. 2001 mar


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