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specification device name : type name : spec. no. : h04-004-07b ms6m 0794 1 15 igbt module 7mbr50ua120 ms6m 0794 apr. 12 ?04 t.miyasaka k.yamada y.seki s.miyashita apr. 12 ?04
h04-004-06b r e v i s e d r e c o r d s date classi- fication ind. content applied date drawn checked checked approved enactment issued date ms6m 0794 2 15 apr.-12- ?04 k.yamada t.miyasaka y.seki
h04-004-03a ms6m 0794 15 7mbr50ua120 2. equivalent circuit 1. outline drawing ( unit : mm ) 3 ( ) shows reference dimension. 23(n) 2(s) 3(t) 1(r) 21(p) 22(p1) 7(b) 24(n1) 13(gx) 19(eu) 20 (gu) 18 (gv) 17(ev) 4(u) 12(gy) 11(gz) 5(v) 15(ew) 16 (gw) 6(w) 10(en) 9 8 [ converter ] [ brake ] [ inverter ] [ thermistor ] 14(gb) label
h04-004-03a ms6m 0794 15 4 3.absolute maximum ratings ( at tc= 25c unless otherwise specified tc=25c tc=80c tc=25c tc=80c tc=25c tc=80c tc=25c tc=80c (*1) all terminals should be connected together when isolation test will be done. (*2) two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. (*3) recommendable value : 2.5~3.5 nm (m5) a io converter a 2 s i 2 t i 2 t (non-repetitive) 260 338 surge current (non-repetitive) ifsm a v 50hz/60hz average output current repetitive peak reverse voltage vrrm 1600 sine wave 50 repetitive peak reverse voltage (diode) v brake collector power dissipation pc 1 device 115 vrrm a 1200 icp 1ms 50 30 w gate-emitter voltage vges 20 15 collector current ic continuous continuous tj=150c, 10ms half sine wave vges ac : 1min. 1200 ic icp 50 35 100 70 items symbols conditions vces inverter collector-emitter voltage gate-emitter voltage collector current collector power dissipation vac n m 3.5 v 20 v 1200 v v 25 junction temperature -ic 50 100 205 -ic pulse pc tj 1 device 150 screw torque - collector-emitter voltage vces tstg mounting *3 between terminal and copper base *1 between thermistor and others *2 storage temperature isolation voltage viso -40 ~ +125 units maximum ratings a c w 1ms 1ms 2500
h04-004-03a ms6m 0794 15 5 4. electrical characteristics ( at tj= 25c unless otherwise specified) vge=0v units items symbols conditions characteristics min. typ. max. gate-emitter leakage current turn-off time turn-on time inverter 0.53 vge(th) rg = 33 tf toff tr tr (i) vce=10v,vge=0v,f=1mhz vcc = 600v ic = 50a vge=15v 0.37 - 0.03 - iges zero gate voltage collector current ices ton cies input capacitance collector-emitter saturation voltage vce(sat) ( terminal) vce(sat) (chip) gate-emitter threshold voltage reverse recovery time zero gate voltage collector current brake turn-off time s if = 50a - 5000 - -0.35 ma - vge = 0v 2.40 2.65 - 520 - - - 200 1.0 - - - t =100c 465 - v 2.25 - 2.00 vf (chip) tj= 25c - tj=125c if = 50a trr 2.40 2.80 2.40 -2.75 - - - - 1.00 s nf - 0.30 1.20 0.60 - 0.07 vce = 0v - 4.5 2.35 -2.00 - 4 vge=20v - - - vce = 1200v 6.5 vge = 0v ic = 50ma vce = 20v - 0.43 na 1.0 ma 200 v - 8.5 v 2.80 - 2.40 thermistor resistance r t = 25c b 495 b value k 3305 3375 3450 t = 25/50c iges vce = 0v vce = 1200v ices forward on voltage vf (terminal) tj=125c tj= 25c tj=125c tj= 25c tj=125c ic = 50a vge=15v tj= 25c na vge=20v tj= 25c v - 2.10 2.60 -2.55 tj=125c - 2.30 2.80 -2.75 - vce(sat) (chip) ic = 25a tj= 25c tj=125c - turn-on time ton vcc = 600v - 0.53 1.20 collector-emitter saturation voltage vce(sat) ( terminal) vge=15v s tr ic = 25a - 0.43 0.60 vge=15v 1.00 tf - 0.07 0.30 toff rg = 68 - 1.0 ma irrm reverse current vr=1200v - - gate-emitter leakage current chip - 1.40 forward on voltage vge=0v if = 50a terminal - 0.37 converter reverse current irrm vr=1600v vfm -1.0ma - 1.90 v - 1.55
h04-004-03a ms6m 0794 15 6 5. thermal resistance characteristics brake igbt converter diode * this is the value which is defined mounting on the additional cooling fin with thermal compo und. 6. indication on module 7.applicable category this specification is applied to igbt module named 7mbr50ua120 . 8.storage and transportation notes ? the module should be stored at a standard temperature of 5 to 35c and humidity of 45 to 75% . ? store modules in a place with few temperature changes in order to avoid condensation on the module surface. ? avoid exposure to corrosive gases and dust. ? avoid excessive external force on the module. ? store modules with unprocessed terminals. ? do not drop or otherwise shock the modules when transporting. 9. definitions of switching time 10. packing and labeling display on the packing box - logo of production - type name - lot no - products quantity in a packing box 1.07 0.90 c/w 50a 1200v 7mbr50ua120 -0.60 - - 0.95 thermal resistance(1device) - - - - rth(j-c) inverter igbt inverter fwd - - contact thermal resistance(1device) rth(c-f) with thermal compound (*) 0.05 - units min. typ. max. items symbols conditions characteristics place of manufacturing (code) lo g o of productio n lot.no. l vcc ic v ce r g v ge v ge v ce ic 0v 0a 0v 10% 90% 10% 10% 90% 90% 0v ic v ce on on on on t t t t r r r r t t t t r(i) r(i) r(i) r(i) t t t t off off off off t t t t f f f f t t t t rr rr rr rr i i i i rr rr rr rr t t t t
h04-004-03a ms6m 0794 15 7 11. reliability test results reliabilit y test items test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 terminal strength pull force : 20n test method 401 5 ( 0 : 1 ) (pull test) test time : 101 sec. method 2 mounting strength screw torque : 2.5 ~ 3.5 n ? m (m5) test method 402 5 ( 0 : 1 ) test time : 101 sec. method 3 vibration range of frequency : 10 ~ 500hz test method 403 5 ( 0 : 1 ) sweeping time : 15 min. reference 1 acceleration : 100m/s 2 condition code b sweeping direction : each x,y,z axis test time : 6 hr. (2hr./direction) 4 shock maximum acceleration : 5000m/s 2 test method 404 5 ( 0 : 1 ) pulse width : 1.0msec. condition code b direction : each x,y,z axis test time : 3 times/direction 5 solderabitlity solder temp. : 2355 test method 303 5 ( 0 : 1 ) immersion time : 50.5sec. condition code a test time : 1 time each terminal should be immersed in solder within 1~1.5mm from the body. 6 resistance to solder temp. : 2605 test method 302 5 ( 0 : 1 ) soldering heat immersion time : 101sec. condition code a test time : 1 time each terminal should be immersed in solder within 1~1.5mm from the body. 1 high temperature storage temp. : 1255 test method 201 5 ( 0 : 1 ) storage test duration : 1000hr. 2 low temperature storage temp. : -405 test method 202 5 ( 0 : 1 ) storage test duration : 1000hr. 3 temperature storage temp. : 852 test method 103 5 ( 0 : 1 ) humidity relative humidity : 855% test code c storage test duration : 1000hr. 4 unsaturated test temp. : 120 2 test method 103 5 ( 0 : 1 ) pressurized vapor test humidity : 855% test code e test duration : 96hr. 5 temperature test method 105 5 ( 0 : 1 ) cycle test temp. : low temp. -40 5 high temp. 125 5 rt 5 ~ 35 dwell time : high ~ rt ~ low ~ rt 1hr. 0.5hr. 1hr. 0.5hr. number of cycles : 100 cycles 6 thermal shock +0 test method 307 5 ( 0 : 1 ) test temp. : high temp. 100 - 5 method +5 condition code a low temp. 0 - 0 used liquid : water with ice and bo iling water dipping time : 5 min. par each temp. transfer time : 10 sec. number of cycles : 10 cycles mechanical tests environment tests
h04-004-03a ms6m 0794 15 8 reliabilit y test items test cate- gories test items test methods and conditions reference norms eiaj ed-4701 (aug.-2001 edition) number of sample accept- ance number 1 high temperature test method 101 5 ( 0 : 1 ) reverse bias test temp. : ta = 125 5 ( t j Q 150 ) bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 2 high temperature test method 101 5 ( 0 : 1 ) bias (for gate) test temp. : ta = 125 5 ( t j Q 150 ) bias voltage : vc = vge = +20v or -20v bias method : applied dc voltage to g-e vce = 0v test duration : 1000hr. 3 temperature test method 102 5 ( 0 : 1 ) humidity bias test temp. : 85 2 o c condition code c relative humidity : 85 5% bias voltage : vc = 0.8vces bias method : applied dc voltage to c-e vge = 0v test duration : 1000hr. 4 intermitted on time : 2 sec. test method 106 5 ( 0 : 1 ) operating life off time : 18 sec. (power cycle) test temp. : ? t j =1005 de g ( for igbt ) t j Q 150 , ta=255 number of cycles : 15000 cycles endurance tests endurance tests failure criteria item characteristic symbol failure criteria unit note lower limit upper limit electrical leakage current ices - usl2 ma characteristic iges - usl2 a gate threshold voltage vge(th) lsl0.8 usl1.2 ma saturation voltage vce(sat) - usl1.2 v forward voltage vf - usl1.2 v thermal igbt ? vge - usl1.2 mv resistance or ? vce fwd ? vf - usl1.2 mv isolation voltage viso broken insulation - visual visual inspection inspection peeling - the visual sample - plating and the others lsl : lower specified limit. usl : upper specified limit. note : each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. and in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement.
h04-004-03a ms6m 0794 15 9 reliability test results test cate- gorie s test items reference norms eiaj ed-4701 (aug.-2001 edition) number of test sample number of failure sample 1 terminal strength test method 401 50 (pull test) method 2 mounting strength test method 402 50 method 3vibration test method 403 50 condition code b 4 shock test method 404 50 condition code b 5 solderabitlity test method 303 50 condition code a 6 resistance to soldering heat test method 302 50 condition code a 1 high temperature storage test method 201 50 2 low temperature storage test method 202 50 3 temperature humidity test method 103 50 storage test code c 4 unsaturated test method 103 50 pressurized vapor test code e 5 temperature cycle test method 105 50 6 thermal shock test method 307 50 method condition code a 1 high temperature reverse bias test method 101 50 2 high temperature bias test method 101 50 ( for gate ) 3 temperature humidity bias test method 102 50 condition code c 4 intermitted operating life test method 106 50 (power cycling) ( for igbt ) mechanical tests environment tests endurance tests
h04-004-03a ms6m 0794 15 10 [ inverter ] [ inverter ] [ inverter ] [ inverter ] collector current vs. collector-emitter voltage (typ.) tj= 125c / chip dynamic gate charge (typ.) collector current vs. collector-emitter voltage (typ.) tj= 25c / chip collector current vs. collector-emitter voltage (typ.) vge=15v / chip tj=25c / chip [ inverter ] [ inverter ] collector-emitter voltage vs. gate-emitter voltage (typ.) vcc=600v ic=50a tj= 25c vge=0v, f= 1mhz, tj= 25c capacitance vs. collector-emitter voltage (typ.) 0 25 50 75 100 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 25 50 75 100 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 25 50 75 100 012345 collector current : ic [a] collector-emitter voltage : vce [v] tj=125c tj=25c 0 2 4 6 8 10 5 10152025 collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] ic=70a ic=35a ic=17.5a 0.1 1.0 10.0 0102030 capacitance : cies, coes, cres [ nf ] collector-emitter voltage : vce [v] cies coes cres 0 50 100 150 200 collector-emitter voltage : vce [ 200v/div ] gate - emitter voltage : vge [ 5v/div ] gate charge : qg [ nc ] 0 vge vce
h04-004-03a ms6m 0794 15 11 [ inverter ] [ inverter ] [ inverter ] [ inverter ] switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=33 , tj= 25c switching time vs. collector current (typ.) vcc=600v, vge=15v, rg=33 , tj=125c reverse bias safe operating area (max.) vcc=600v, ic=50a, vge=15v, tj= 125c +vge=15v,-vge <= 15v, rg >= 33 ,tj <= 125c switching time vs. gate resistance (typ.) vcc=600v, vge=15v, rg=33 switching loss vs. gate resistance (typ.) [ inverter ] [ inverter ] vcc=600v, ic=50a, vge=15v, tj= 25c switching loss vs. collector current (typ.) 10 100 1000 10000 0 10203040506070 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] ton tr toff tf 10 100 1000 10000 0 10203040506070 switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] toff ton tr tf 10 100 1000 10000 10.0 100.0 1000.0 switching time : ton, tr, toff, tf [ nsec ] gate resistance : rg [ ? ] tr tf toff ton 0 4 8 12 16 20 0 102030405060708090 switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] eon(125c) eon(25c) eoff(125c) err(125c) err(25c) eoff(25c) 0 10 20 30 1.0 10.0 100.0 1000.0 switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ ? ] eoff err eon 0 50 100 150 0 400 800 1200 collector current : ic [ a ] collector - emitter voltage : vce [ v ]
h04-004-03a ms6m 0794 15 12 [ inverter ] [ inverter ] [ thermistor ] reverse recovery characteristics (typ.) vcc=600v, vge=15v, rg=33 forward current vs. forward on voltage (typ.) chip chip [ converter ] forward current vs. forward on voltage (typ.) transient thermal resistance (max.) temperature characteristic (typ.) 0. 1 1 1 0 1 00 -60 -40 -20 0 20 40 60 80 1 00 1 20 1 40 1 60 1 80 temperature [c ] resistance : r [ k ? ] 0 25 50 75 01234 forward current : if [ a ] forward on voltage : vf [ v ] tj=125c tj=25c 10 100 1000 0 10203040506070 reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] forward current : if [ a ] trr (125c) trr (25c) irr (125c) irr (25c) 0.010 0.100 1.000 10.000 0.001 0.010 0.100 1.000 thermal resistanse : rth(j-c) [ c/w ] pulse width : pw [ sec ] fwd[inverter] igbt[brake] igbt[inverter] 0 25 50 75 0.0 0.5 1.0 1.5 2.0 2.5 forward current : if [ a ] forward on voltage : vfm [ v ] tj=125c tj=25c conv diode
h04-004-03a ms6m 0794 15 13 [ brake ] [ brake ] [ brake ] [ brake ] collector current vs. collector-emitter voltage (typ.) tj= 125c / chip collector current vs. collector-emitter voltage (typ.) tj= 25c / chip tj=25c / chip [ brake ] [ brake ] collector-emitter voltage vs. gate-emitter voltage (typ.) collector current vs. collector-emitter voltage (typ.) vge=15v / chip vge=0v, f= 1mhz, tj= 25c capacitance vs. collector-emitter voltage (typ.) vcc=600v ic=25a tj= 25c dynamic gate charge (typ.) 0 10 20 30 40 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 10 20 30 40 012345 collector current : ic [a] collector-emitter voltage : vce [v] vge=20v 15v 12v 10v 8v 0 10 20 30 40 012345 collector current : ic [a] collector-emitter voltage : vce [v] tj=125c tj=25c 0 2 4 6 8 10 5 10152025 collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] ic=30a ic=15a ic=7.5a 0.1 1.0 10.0 01020 capacitance : cies, coes, cres [ nf ] collector-emitter voltage : vce [v] cies coes cres 0 20406080100 collector-emitter voltage : vce [ 200v/div ] gate - emitter voltage : vge [ 5v/div ] gate charge : qg [ nc ] 0 vge vce
h04-004-03a ms6m 0794 15 14 warnings - this product shall be used within its absolute maximum rating (voltage, current, and temperature). this product may be broken in case of using beyond the ratings. u?~???R?????~????????? ?? - connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. ?]1??????]??u?gm?`???``? ??k???? - use this product after realizing enough working on environment and considering of product's reliab ility life. this product may be broken before target life of the system in case of using beyond the product's reliab ility life. u??h????u?m????u?m?u?m ????????????? - when electric power is connected to equipments, rush current w ill be flown thr ough rectifying diode to charge dc ca p acitor. guaranteed value of the rush current is s p ecified as i 2 t ( non-re p etitive ) , however fre q uent rush current through the diode might make it's power cycle destruction occur because of the repetitive power. in application which has such frequent rush current, well consideration to product life time (i.e. suppressing the rush current) is necessary. ??r?`??????`??????^ i 2 t( R ) ??????l i 2 t ??e?`?R?? ?`??????l????`??? ??u????? - if the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. ?C?????????h????u?C?Q?^??? - use this product within the power cycle curve (technical rep.no. : mt5f12959). power cycle capab ility is classified to delta-tj mode which is stated as above and delta-tc mode. delta-tc mode is due to rise and down of case temperature (tc), and depends on cooling design of equipment which use this product. in application which has such frequent rise and down of tc, well consideration of product life time is necessary. u???``? ( gY no.: mt5f 1 2959) ?`?? tj ? ?? tc ????`? (tc) ?N???????u???H ?O??`???N?l????u????? - never add mechanical stress to deform the main or control terminal. the deformed terminal may cause poor contact problem. ????????????????? - use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. also keep the tightening torque within the limits of this specification. too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. on the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. ??????g??? 100mm 100um ?? 10um ?^? ???u?~F????1??k????^???? u???g???????????? - in case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. if the thermal compound amount was not enough or its applying method was not suitable, its spreading w ill not be enough, then, thermal conductivity w ill be worse and thermal run away destruction may occur. confirm spreading state of the thermal compound when its applying to this product. (spreading state of the thermal compound can be confirmed by removing this product after mounting.) ?????H???_???????T?? Tm??????????o?????? ?TH??u????????_J? ( g???????????_J? ) - it shall be confirmed that igbt's operating locus of the turn-off voltage and current are within the rbsoa specification. this product may be broken if the locus is out of the rbsoa. `???R???E rbsoa ?????_J rbsoa ?????? ??
h04-004-03a ms6m 0794 15 15 cautions cautions cautions cautions - fuji electric device technology is constantly making every endeavor to improve the product quality and reliab ility. however, semiconductor products may rarely happen to fail or malfunction. to prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the fuji electric device technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. ??C???`?~u??|m??????u???k? `????C???`u?u???`Y?1? ???b?p??p????LO????O??`?O????_ ?v - the application examples described in this specification only explain typical ones that used the fuji electric device technology products. this specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. ??d????C???`u?????h?? ????I??g??????g??SZ??? - the product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. when you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliab ility. ??d?u?????r??C?????? ???O??u????????u??IC?C? @C??????????H?????| ?????_J? if there is any unclear matter in this specification, please contact fuji electric device technology co.,ltd. warnings - if excessive static electricity is applied to the control terminals, the devices may be broken. implement some countermeasures against static electricity. ?^????????????Qr????g? - never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. the module structure may be broken. ????g?H???^???????? - in case of insufficient -vge, erroneous turn-on of igbt may occur. -vge shall be set enough value to prevent this malfunction. (recommended value : -vge = -15v) `?R -vge ??`?????`???? -vge ??? O?X : -vge = - 1 5v) - in case of higher turn-on dv/dt of igbt, erroneous turn-on of opposite arm igbt may occur. use this product in the most suitable drive conditions, such as +vge, -vge, rg to prevent the malfunction. `?? dv/dt ??``?????`????m?? +vge, -vge, rg ??? - this product may be broken by avalanche in case of vce beyond maximum rating vces is applied between c-e terminals. use this product within its absolute maximum voltage. vces ???R??????????? vce ??~ ??

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