bc546 thru bc548 vishay semiconductors formerly general semiconductor document number 88160 www.vishay.com 08-may-02 1 small signal transistors (npn) features ?npn silicon epitaxial planar transistors ?these transistors are subdivided into three groups a, b, and c according to their current gain. the type bc546 is available in groups a and b, however, the types bc547 and bc548 can be supplied in all three groups. as complementary types the pnp transistors bc556...bc558 are recommended. ?on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit bc546 80 collector-base voltage bc547 v cbo 50 v bc548 30 bc546 80 collector-emitter voltage bc547 v ces 50 v bc548 30 bc546 65 collector-emitter voltage bc547 v ceo 45 v bc548 30 emitter-base voltage bc546, bc547 v ebo 6 v bc548 5 collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma peak emitter current -i em 200 ma power dissipation at t amb = 25 cp tot 500 (1) mw thermal resistance junction to ambient air r ja 250 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
bc546 thru bc548 vishay semiconductors formerly general semiconductor www.vishay.com document number 88160 2 08-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit current gain group a v ce = 5 v, i c = 2 ma, 220 small signal current gain b h fe f = 1 khz 330 c 600 current gain group a v ce = 5 v, i c = 2 ma, 1.6 2.7 4.5 input impedance b h ie f = 1 khz 3.2 4.5 8.5 k ? c 6 8.7 15 current gain group a v ce = 5 v, i c = 2 ma, 18 30 output admittance b h oe f = 1khz 30 60 s c 60 110 current gain group a v ce = 5 v, i c = 2 ma, 1.5 10 -4 reverse voltage transfer ratio b h re f = 1khz 2 10 -4 c 3 10 -4 current gain group a 90 bv ce = 5 v, i c = 10 a 150 c 270 current gain group a 110 180 220 dc current gain b h fe v ce = 5 v, i c = 2 ma 200 290 450 c 420 500 800 current gain group a 120 bv ce = 5 v, i c = 100 ma 200 c 400 collector saturation voltage v cesat i c = 10 ma, i b = 0.5 ma 80 200 mv i c = 100 ma, i b = 5 ma 200 600 base saturation voltage v besat i c = 10 ma, i b = 0.5 ma 700 mv i c = 100 ma, i b = 5 ma 900 base-emitter voltage v be v ce = 5 v, i c = 2 ma 580 660 700 mv v ce = 5 v, i c = 10 ma 720 bc546 v ce = 80 v 0.2 15 na collector-emitter bc547 v ce = 50 v 0.2 15 na cutoff current bc548 i ces v ce = 30 v 0.2 15 na bc546 v ce = 80 v, t j = 125 c 4 a bc547 v ce = 50 v, t j = 125 c 4 a bc548 v ce = 30 v, t j = 125 c 4 a gain-bandwidth product f t v ce = 5 v, i c = 10 ma, 300 mhz f = 100 mhz collector-base capacitance c cbo v cb = 10 v, f = 1 mhz 3.5 6 pf emitter-base capacitance c ebo v eb = 0.5 v, f = 1 mhz 9 pf bc546, bc547 v ce = 5 v, i c = 200 a, noise figure bc548 fr g = 2 k ? , f = 1 khz, 210db ? f = 200 hz
bc546 thru bc548 vishay semiconductors formerly general semiconductor document number 88160 www.vishay.com 08-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc546 thru bc548 vishay semiconductors formerly general semiconductor www.vishay.com document number 88160 4 08-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc546 thru bc548 vishay semiconductors formerly general semiconductor document number 88160 www.vishay.com 08-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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