? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 250 v v dgr t j = 25 c to 175 c; r gs = 1 m 250 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 120 a i d(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c60a e ar t c = 25 c60mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 p d t c = 25 c 700 w t j -55 ... +175 c t jm 175 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1 .13/10 nm/lb.in. weight to-264 10 g plus247 6 g g = gate d = drain s = source tab = drain ds99379(04/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 19 24 m pulse test, t 300 s, duty cycle d 2 % polarht tm hiperfet power mosfet ixfk 120n25p ixfx 120n25p n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density v dss = 250 v i d25 = 120 a r ds(on) =24m t rr < 200 ns to-264(sp) (ixfk) (tab) g d s plus247 (ixfx) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 120n25p ixfx 120n25p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 50 70 s c iss 8000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1300 pf c rss 220 pf t d(on) 30 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 60 a 33 ns t d(off) r g = 3.3 (external) 130 ns t f 33 ns q g(on) 185 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 50 nc q gd 80 nc r thjc 0.18 k/w r thck to-264 & plus247 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 120 a i sm repetitive 300 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25 a; -di/dt = 100 a/ s; v r = 100 v 200 ns q rm v gs = 0 v 0.8 c i rm 8a to-264(sp) (ixfk) outline dim. m illimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 25 50 75 100 125 150 175 200 225 250 02468101214161820 v d s - volts i d - amperes v gs = 10v 7v 6v 8v 9v fig. 3. output characteristics @ 150 o c 0 10 20 30 40 50 60 70 80 90 100 110 120 012345678 v d s - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 1. output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 110 120 00.511.522.533.5 v d s - volts i d - amperes v gs = 10v 9v 7v 6v 8v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 120a i d = 60a v gs = 10v fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.6 1 1.4 1.8 2.2 2.6 3 3.4 3.8 0 30 60 90 120 150 180 210 240 270 i d - amperes r d s ( o n ) - normalize d t j = 25 o c v gs = 10v t j = 150 o c v gs = 15v ixfk 120n25p ixfx 120n25p
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 120n25p ixfx 120n25p fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 125v i d = 60a i g = 10ma fig. 7. input admittance 0 30 60 90 120 150 180 210 44.5 55.5 66.5 77.5 88.5 v g s - volts i d - amperes t j = 150 o c 25 o c -40 o c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 0 30 60 90 120 150 180 210 i d - amperes g f s - siemens t j = -40 o c 25 o c 150 o c fig. 9. source current vs. source-to-drain voltage 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v s d - volts i s - amperes t j = 150 o c t j = 25 o c fig. 12. forw ard-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100 s 1ms dc t j = 150 o c t c = 25 o c r ds(on) limit 10ms 25
? 2005 ixys all rights reserved fig. 13. maxim um transient therm al resistance 0.00 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - oc / w ixfk 120n25p ixfx 120n25p
|
