? 2000 in?neon technologies corp. ? optoelectronics division ? san jose, ca www.in?neon.com/opto ? 1-888-in?neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ? regensburg, germany www.osram-os.com ? +49-941-202-7178 1 march 17, 2000-18 features ? 5300 v rms i/o isolation ? current-limit protection built-in ? linear ac/dc operation ? high-reliability monolithic receptor ? clean, bounce-free switching ? high surge capability ? surface mountable agency approvals ? ul C file no. e52744 ? csa C certi?cation 093751 ? bsi/babt certi?ed applications ? telecom switching ? programmable controllers ? instrumentation ? industrial controls C micro control of solenoids, lights, motors description the lh1517 relay is a low on-resistance, spst normally open switch (1 form a) that can replace electromechani- cal relays in many applications. the relay is constructed using a gaalas led for actuation control and an inte- grated monolithic die for the switch output. the die, fabri- cated in a high-voltage dielectrically isolated technology, is comprised of a photodiode array, switch-control circu- ity, and dmos switches. part identi?cation part number description lh1517at 6-pin dip, tubes LH1517AAB 6-pin smd, gullwing, tubes LH1517AABtr 6-pin smd, gullwing, tape and reel .014 (.35) .010 (.25) .150 (3.81) .110 (2.79) .150 (3.81) .130 (3.30) .020 (.051) min. .300 (7.62) typ. .035 (0.90) .031 (0.80) .100 (2.54) typ. .039 (1.00) min. .022 (0.55) .018 (0.45) .256 (6.50) .248 (6.30) .343 (8.70) .335 (8.50) pin one id. 6 5 4 1 2 3 18 typ. .347 (8.82) .300 (7.62) 4 typ. .343 (8.71) .335 (8.51) .256 (6.50) .248 (6.30) pin one i.d. .039 (0.99) min. .150 (3.81) .130 (3.30) .100 (2.54) .052 (1.33) .048 (1.22) 4 .040 (1.016) .020 (0.508) .0098 (.25) .0040 (.10) .012 (0.31) .008 (0.20) .300 (7.62) .395 (10.03) .375 (9.63) 3 to 7 18 min. .315 (8.00) typ. .050 (1.27) typ. 4 65 123 s' s dc ss' package dimensions in inches (mm) dip smd lh1517at/aab/aabtr 1 form a solid state relay
? 2000 in?neon technologies corp. ? optoelectronics division ? san jose, ca lh1517at/aab/aabtr www.in?neon.com/opto ? 1-888-in?neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ? regensburg, germany www.osram-os.com ? +49-941-202-7178 2 march 17, 2000-18 electrical characteristics, t a =25 c minimum and maximum values are testing requirements. typical values are characteristics of the device and are the result of engineering evaluations. typical values are for information only and are not part of the testing requirements. parameter sym. min. typ. max. units test conditions input led forward current, switch turn-on i fon 0.9 2.0 ma i l =100 ma, t=10 ms led forward current, switch turn-off i foff 0.2 0.8 ma v l 100 v led forward voltage v f 1.15 1.26 1.45 v i f =10 ma output on-resistance ac/dc: pin 4 () to 6 () r on 1.0 2.0 3.0 w i f =5.0 ma, i l =50 ma dc: pin 4, 6 (+) to 5 () 0.25 0.5 0.85 i f =5.0 ma, i l =100 ma off-resistance r off 0.5 2500 g w i f =0 ma, v l =100 v current limit ac/dc: pin 4 () to 6 () i lmt ma i f =5.0 ma, t=5.0 ms dc: pin 4, 6 (+) to 5 () i f =5.0 ma, v l =4.0 ma t=5.0 ms off-state leakage current 0.04 200 na i f =0 ma, v l =100 v 1.0 m a i f =0 ma, v l =150 v output capacitance pin 4 to 6 185 pf i f =0 ma, v l =1.0 v 45 i f =0 ma, v l =50 v switch offset 0.1 v i f =5.0 ma transfer input/output capacitance c iso 0.8 pf v iso =1.0 v turn-on time t on 1.7 3.0 ms i f =5.0 ma, i l =50 ma turn-off time t off 1.3 3.0 ms i f =5.0 ma, i l =50 ma absolute maximum ratings, t a =25 c stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress ratings only. functional oper- ation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum ratings for extended periods of time can adversely affect reliability. ambient temperature range ( t a ) .................................... C40 to +85 c storage temperature range ( t stg ) ................................. C40 to +150 c pin soldering temperature (t=10 s max) ( t s ) ............................. 260 c input/output isolation voltage ( v iso ) .................................. 3750 v rms led continuous forward current ( i f ) .........................................50 ma led reverse voltage ( i r 10 m a) ( v r )........................................... 8.0 v dc or peak ac load voltage ( i l 50 m a) ( v l ) .............................. 150 v continuous dc load current ( i l ) bidirectional operation............................................................400 ma unidirectional operation..........................................................800 ma peak load current (t=100 ms) (single shot) ( i p ) ....................1200 ma output power dissipation ( p diss )............................................. 600 mw recommended operating conditions 240 0 160 400 320 80 ?0 ?0 0 20 40 60 80 load current (ma) ambient temperature ( c) i fon =2.0 ma i fon =3.0 ma i fon =4.0 ma i fon =5.0 ma i fon = 6.0 to 20 ma
? 2000 in?neon technologies corp. ? optoelectronics division ? san jose, ca lh1517at/aab/aabtr www.in?neon.com/opto ? 1-888-in?neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ? regensburg, germany www.osram-os.com ? +49-941-202-7178 3 march 17, 2000-18 typical performance characteristics figure 1. led current for switch turn-on vs. temperature figure 2. on-resistance vs. temperature figure 3. current limit vs. temperature ambient temperature ( c) 100 ?0 80 60 40 ?0 ?0 20 ?0 0 ?0 0 20 40 60 80 i l = 100 ma led forward current for switch turn-on (%), normalized to 25 c ?0 50 10 30 20 40 ?0 ?0 ?0 ?0 0 20 0 2040 6080 ambient temperature ( c) i l = 50 ma change in on-resistance (%) normalized to 25 c ?0 40 10 30 20 0 ?0 ?0 ?0 ?0 200 204060 ambient temperature ( c ) 80 i f = 5.0 ma t = 5.0 ms v l = see elec. char . change in current limit (%) normalized to 25 c figure 4. switch breakdown voltage vs. temperature figure 5. switch capacitance vs. applied voltage figure 6. leakage current vs. applied voltage at elevated temperatures ?0 ?0 0 20 40 60 80 ambient temperature ( c) 8 0 4 2 6 ? ? ? ? change in breakdown voltage (%) normalized to 25 c 02040 applied voltage (v) 160 200 120 80 40 0 60 100 80 i f =0 ma t a =25 c f=1.0 mhz capacitance (pf) load voltage (v) 3.0 2.5 2.0 1.0 0.5 1.5 0 0 50 100 150 200 250 300 350 400 85 c 70 c 50 c off-state leakage current (na)
? 2000 in?neon technologies corp. ? optoelectronics division ? san jose, ca lh1517at/aab/aabtr www.in?neon.com/opto ? 1-888-in?neon (1-888-463-4636) osram opto semiconductors gmbh & co. ohg ? regensburg, germany www.osram-os.com ? +49-941-202-7178 4 march 17, 2000-18 figure 7. leakage current vs. applied voltage figure 8. turn-on time vs. led current figure 9. turn-off time vs. led current 90 0 50 100 150 200 250 300 load voltage (v) 100 70 80 60 40 30 50 20 10 0 350 400 i f = 0 ma t a = 25 c off-state leakage current (pa) 010 2030 50 40 8 10 0 6 4 2 i l =50 ma led forward current (ma) ?0 c 25 c 85 c turn-on time (ms) 01020 led forward current (ma) turn-off time (ms) 2.5 2.0 1.5 0.5 30 1.0 50 40 ?0 c 25 c 85 c i l =50 ma
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