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2sk3203(l), 2sk3203(s) silicon n channel mos fet high speed power switching ade-208-1384a (z) 2nd. edition jan. 2001 features low on-resistance r ds(on) =11m typ. low drive current 5v gate drive device can be driven from 5v source outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak g d s
2sk3203(l), 2sk3203(s) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v drain current i d 45 a drain peak current i d(pulse) * 1 180 a body-drain diode reverse drain current i dr 45 a channel dissipation pch* 2 50 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c 3. value at tch = 25 c, rg 3 50 w
2sk3203(l), 2sk3203(s) 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 30v i d = 10ma, v gs = 0 gate to source leak current i gss 0.1 m av gs = 20v, v ds = 0 zero gate voltege drain current i dss 10 m av ds = 30 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.5 3.0 v i d = 1ma, v ds = 10v* 1 static drain to source on state r ds(on) ?114m w i d = 20a, v gs = 10v* 1 resistance 18 28 m w i d = 20a, v gs = 5v* 1 forward transfer admittance |y fs |1322s i d = 20a, v ds = 10v* 1 input capacitance ciss 1200 pf v ds = 10v output capacitance coss 380 pf v gs = 0 reverse transfer capacitance crss 200 pf f = 1mhz total gate charge qg 23 nc v dd = 10v gate to source charge qgs 4.0 nc v gs = 10v gate to drain charge qgd 7.0 nc i d = 45a turn-on delay time t d(on) ?7 nsv gs = 10v, i d = 20a rise time t r 300 ns r l = 0.5 w turn-off delay time t d(off) ?5 ns fall time t f ?5 ns body?rain diode forward voltage v df 1.15 v i f = 45a, v gs = 0 body?rain diode reverse recovery time t rr ?0 nsi f =45a, v gs = 0 dif/ dt =20a/ m s note: 1. pulse test
2sk3203(l), 2sk3203(s) 4 main characteristics channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d typical output characteristics gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 50 40 30 20 10 0 246810 50 40 30 20 10 0 2468 10 tc = 75 c 25 c e25 c 80 60 40 20 0 50 100 150 200 v = 10 v pulse test ds v = 3.5 v gs 10v 4 v 5 v pulse test 4.5 v 6 v 0.1 0.3 1 3 10 30 100 drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 1000 300 100 30 10 1 0.3 0.1 3 ta = 25 c 10 m s 100 m s 1 ms dc operation (tc = 25?c) operation in this area is limited by r ds(on) pw = 10 ms (1 shot)
2sk3203(l), 2sk3203(s) 5 gate to source voltage v (v) gs drain to source voltage v (v) ds(on) drain to source saturation voltage vs. gate to source voltage drain current i (a) d drain to source on state resistance r (m ) w ds(on) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance static drain to source on state resistance vs. temperature forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs. drain current 0.5 0.4 0.3 0.2 0.1 0 4 8 12 16 20 20 10 2 5 1 0.5 2 5 20 50 50 40 30 20 10 e40 0 40 80 120 160 0 pulse test i = 10 a d 2 a 5 a 0.1 1 10 100 0.2 100 50 v = 5 v gs 10 v pulse test r (m ) w ds(on) i = 2 a, 5 a, 10 a d v = 10 v gs 5 v pulse test 330 0.1 1 10 100 0.3 10 100 30 1 0.3 3 0.1 tc = e25 c ds v = 10 v pulse test 75 c 25 c 10 a 2a, 5 a
2sk3203(l), 2sk3203(s) 6 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage drain current i (a) d switching time t (ns) switching characteristics 01020304050 10000 3000 1000 300 100 30 10 ciss coss crss v = 0 f = 1 mhz gs 1000 200 500 100 20 50 10 0.2 0.5 1 2 5 10 20 0.1 t f r t d(off) t d(on) t 50 40 30 20 10 0 20 16 12 8 4 20 40 60 80 100 0 i = 45a d v gs v ds v = 25 v 10 v 5 v dd v = 25 v 10 v 5 v dd gate charge qg (nc) drain to source voltage v (v) ds gate to source voltage v (v) gs dynamic input characteristics gs v = 10 v , v = 10 v rg = 50 , duty < 1 % w dd 0.1 0.3 1 3 10 30 100 1000 500 100 200 20 50 10 di / dt = 20 a / m s v = 0, ta = 25 c gs reverse drain current i (a) dr reverse recovery time trr (ns) bodyedrain diode reverse recovery time
2sk3203(l), 2sk3203(s) 7 source to drain voltage v (v) sd reverse drain current i (a) dr 50 40 30 20 10 0 0.4 0.8 1.2 1.6 2.0 reverse drain current vs. souece to drain voltage pulse test 5 v v = 0,-5v gs 10 v 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m pulse width pw (s) normalized transient thermal impedance 100 m 1 10 s (t) g dm p pw t d = pw t ch e c(t) = s (t) ch e c ch e c = 2.5 c/w, tc = 25 c q g q q tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse normalized transient thermal impedance vs. pulse width
2sk3203(l), 2sk3203(s) 8 vin monitor d.u.t. vin 10v r l v = 10 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit switching time waveform
2sk3203(l), 2sk3203(s) 9 package dimensions hitachi code jedec eiaj mass (reference value) ldpak (l) 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ?0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ?0.5 (1.4) 1.27 0.2 as of january, 2001 unit: mm
2sk3203(l), 2sk3203(s) 10 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3203(l), 2sk3203(s) 11 hitachi code jedec eiaj mass (reference value) ldpak (s)-(2) 1.35 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ?0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ?0.1 0.4 0.1 0.86 + 0.2 ?0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ?0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2001 unit: mm
2sk3203(l), 2sk3203(s) 12 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0

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