parameter description guaranteed (min/max) test conditions v (br)dss drain-to-source breakdown voltage 40v min. v gs = 0v, i d = 250a r ds(on) static drain-to-source on-resistance 0.020 w max. v gs = 10v, i d = 5.0a 0.030 w max. v gs = 4.5v, i d = 5.0a v gs(th) gate threshold voltage 1.0v min., 3.0v max. v ds = v gs , i d = 250a i dss drain-to-source leakage current 25a max. v ds = 55v, v gs = 0v, t j = 25c i gss gate-to-source leakage 15a max. v gs = 16v t j operating junction and 175c max. t stg storage temperature range nominal backmetal composition, thickness: cr-niv-ag ( 1ka-2ka-2.5ka ) nominal front metal composition, thickness: 99% al, 1% si (0.004 mm) dimensions: 0.181" x 0.303" ( 4.6mm x 7.7 mm) wafer diameter: 150mm, with std. < 100 > flat wafer thickness: .014" + / -.003" relevant die mechanical dwg. number 01-5298 minimum street width 0.1 mm reject ink dot size 0.13mm diameter minimum, 0.51mm max. recommended storage environment: store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c 40 v size 4.6 rds(on)=0.020 w 6" wafer 3/23/99 mechanical data die outline reference standard ir packaged part ( for design ) : irlbl1304 electrical characteristics ( wafer form ) IRLC1304 hexfet ? power mosfet die in wafer form s d g pd- 91871
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