1 nov-24-1997 bsm 100 gal 120 dn2 igbt power module ? single switch with chopper diode at collector ? including fast free-wheeling diodes ? package with insulated metal base plate type v ce i c package ordering code bsm 100 gal 120 dn2 1200 v 150 a half bridge gal 2 c67076-a2012-a70 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 80 c i c 100 150 a pulsed collector current, t p = 1 ms t c = 25 c t c = 80 c i cpuls 200 300 power dissipation per igbt t c = 25 c p to t 800 w chip temperature t j + 150 c storage temperature t stg -40 ... + 125 thermal resistance, chip case r thjc 0.16 k/w diode thermal resistance, chip case r thjc d 0.3 diode thermal resistance, chip-case,chopper r thjc dc 0.25 insulation test voltage, t = 1min. v is 2500 vac creepage distance - 20 mm clearance - 11 din humidity category, din 40 040 - f sec iec climatic category, din iec 68-1 - 40 / 125 / 56
2 nov-24-1997 bsm 100 gal 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 4 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 100 a, t j = 25 c v ge = 15 v, i c = 100 a, t j = 125 c v ce(sat) - - 3.1 2.5 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c v ce = 1200 v, v ge = 0 v, t j = 125 c i ces - - 6 1.5 - 2 ma gate-emitter leakage current v ge = 20 v, v ce = 0 v i ges - - 400 na ac characteristics transconductance v ce = 20 v, i c = 100 a g fs 54 - - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 6.5 - nf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 1 - reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 0.5 -
3 nov-24-1997 bsm 100 gal 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t d(on) - 130 260 ns rise time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t r - 80 160 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t d(off) - 400 600 fall time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t f - 70 100 free-wheel diode diode forward voltage i f = 100 a, v ge = 0 v, t j = 25 c i f = 100 a, v ge = 0 v, t j = 125 c v f - - 1.8 2 - 2.5 v reverse recovery time i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -1000 a/s, t j = 125 c t rr - 0.3 - s reverse recovery charge i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -1000 a/s t j = 25 c t j = 125 c q rr - - 14 4 - - c
4 nov-24-1997 bsm 100 gal 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. chopper diode chopper diode forward voltage i fc = 150 a, v ge = 0 v, t j = 25 c i fc = 150 a, v ge = 0 v, t j = 125 c v fc - - 1.8 2 - 2.5 v reverse recovery time, chopper i fc = 150 a, v r = -600 v, v ge = 0 v d i f / dt = -1500 a/s, t j = 125 c t rrc - 0.4 - s reverse recovery charge, chopper i fc = 150 a, v r = -600 v, v ge = 0 v d i f / dt = -1500 a/s t j = 25 c t j = 125 c q rrc - - 18 5 - - c
gal type gar type pin 6 and 7 gal type only pin 4 and 5 gar type only igbt-module igbt-modules %60*$/'1%60*$5'1 geh?usema?e / schaltbild package outline / circuit diagram update of drawing sep-21-98
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