2sb1109, 2sb1110 silicon pnp epitaxial application low frequency high voltage amplifier complementary pair with 2sd1609 and 2sd1610 outline 1 2 3 to-126 mod 1. emitter 2. collector 3. base absolute maximum ratings (ta = 25 c) ratings item symbol 2sb1109 2sb1110 unit collector to base voltage v cbo C160 C200 v collector to emitter voltage v ceo C160 C200 v emitter to base voltage v ebo C5 C5 v collector current i c C100 C100 ma collector power dissipation p c 1.25 1.25 w junction temperature tj 150 150 c storage temperature tstg C45 to +150 C45 to +150 c
2sb1109, 2sb1110 2 electrical characteristics (ta = 25 c) 2sb1109 2sb1110 item symbol min typ max min typ max unit test conditions collector to base breakdown voltage v (br)cbo C160 C200 v i c = C10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo C160 C200 v i c = C1 ma, r be = emitter to base breakdown voltage v (br)ebo C5 C5 v i e = C10 m a, i c = 0 collector cutoff current i cbo C10 m av cb = C140 v, i e = 0 C10 m av ce = C160 v, i e = 0 dc current tarnsfer ratio h fe1 * 1 60 320 60 320 v ce = C5 v, i c = C10 ma h fe2 30 30 v ce = C5 v, i c = C1 ma base to emitter voltage v be C1.5 C1.5 v i c = C5 v, i c = C10 ma collector to emitter saturation voltage v ce(sat) C2 C2v i c = C30 ma, i b = C3 ma gain bandwidth product f t 140 140 mhz v ce = C5 v, i c = C10 ma collector output capacitance cob 5.5 5.5 pf v cb = C10 v, i e = 0, f = 1 mhz note: 1. the 2sb1109 and 2sb1110 are grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320 0 50 100 150 ambient temperature t a ( c) collector power dissipation pc (w) 0.0 1.5 1.0 maximum collector dissipation curve collector to emitter voltage v ce (v) collector current i c (ma) 0 typical output characteristics ?0 ?6 ?2 ? ? ? ? ? ? ?0 i b = 0 ?0 m a ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?0 ?00 ?10 ?20
2sb1109, 2sb1110 3 base to emitter voltage v be (v) collector current i c (ma) typical transfer characteristics ?.2 0 ?.6 ?.4 ?.0 ?.8 ? ? ?0 ?0 ?0 ?00 ? t a = 75 c 25 ?5 v ce = ? v
5 10 20 50 100 200 500 collector current i c (ma) dc current transfer ratio h fe ? ? ? ?0 ?0 ?0 ?00 dc current transfer ratio vs.
collector current v ce = ? v
t a = 75 c 25 ?5 ?.05 ?.1 ?.2 ?.5 ?.0 ? ? collector current i c (ma) ? ? ? ?0 ?0 ?0 ?00 collector to emitter saturation voltage
v ce (sat) (v)
base to emitter saturation voltage
v be (sat) (v) saturation voltage vs. collector current v be (sat) v ce (sat) l c = 10 l b 25 25 75 75 t c = ?5 c
t c = 25 c
5 10 20 50 100 200 500 collector current i c (ma) gain bandwidth product f t (mhz) ?.5 ?.0 ? ? ?0 ?0 ?0 gain gandwidth product vs.
collector current v ce = ?0 v
0.5 1.0 2 5 10 20 50 collector to base voltage v cb (v) collector output capacitance c ob (pf) ? ? ? ?0 ?0 ?0 ?00 collector output capacitance vs.
collector to base voltage f = 1 mhz
i e = 0
2sb1109, 2sb1110 4 notice when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
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