7mbr25ne120 igbt modules igbt module 1200v / 25a / pim features high speed switching voltage drive low inductance module structure converter diode bridge dynamic brake circuit applications inverter for motoe drive ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c unless without specified) item symbol condition ra ting unit collector-emitter voltage gate-emitter voltage collector current collector power disspation collector-emitter voltage gate-emitter voltage collector current collector power disspation repetitive peak reverse voltage average forward current surge current repetitive peak reverse voltage non-repetitive peak reverse voltage average output current surge current (non-repetitive) i2t (non-repetitive) converter brake inverter operating junction temperature storage temperature isolation voltage mounting screw torque v ces v ges i c i cp -i c p c v ces v ges i c i cp p c i f(av) i fsm v rrm v rsm i o i fsm t j t stg v iso continuous 1ms 1 device continuous 1ms 1 device 10ms 50hz/60hz sine wave tj=150c, 10ms tj=150c, 10ms ac : 1 minute 1200 20 25 50 25 200 1200 20 15 30 120 1200 1 50 1600 1700 25 320 512 +150 -40 to +125 ac 2500 1.7 * 1 v v a a a w v v a a w v a a v v a a a2s c c v nm * 1 recommendable value : 1.3 to 1.7 nm (m4)
electrical characteristics (tj=25c unless without specified) item symbol condition characteristics unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage collector-emitter voltage input capacitance switching time reverse recovery time of frd zero gate voltage collector current gate-emitter leakage current collector-emitter saturation voltage switching time reverse current reverse recovery time forward voltage reverse current converter brake brake (igbt) inverter (igbt) (fwd) i ces i ges v ge(th) v ce(sat) -v ce c ies t on t r t off t f t rr i ces i ges v ce(sat) t on t r t off t f i rrm t rr v fm i rrm v ce =1200v, v ge =0v v ce =0v, v ge =20v v ce =20v, i c =25ma v ge =15v, ic=25a -ic=25a v ge =0v, v ce =10v, f=1mhz v cc =600v i c =25a v ge =15v r g =51 ohm i f =25a v ces =1200v, v ge =0v v ce =0v, v ge =20v i c =15a, v ge =15v v cc =600v i c =15a v ge =15v r g =82 ohm v r =1200v i f =25a v r =1600v 1.0 20 7.5 3.3 3.0 1.2 0.6 1.5 0.5 0.35 1.0 0.1 3.3 0.8 0.6 1.5 0.5 1 0.6 1.4 1.0 4000 4.5 ma a v v v pf s s s s s ma a v s s s s ma s v ma item symbol condition characteristics unit min. typ. max. inverter igbt inverter frd brake igbt converter diode with thermal compound 0.63 1.70 1.04 c/w 3.40 0.05 thermal resistance ( 1 device ) rth(j-c) contact thermal resistance * rth(c-f) thermal characteristics igbt module 7mbr25ne120 * this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic * nlu (over current limiting circuit)
igbt module 7mbr25ne120 characteristics (representative) collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=600v, rg=51 ohm, vge=15v, tj=25c switching time vs. collector current vcc=600v, rg=51 ohm, vge=15v, tj=125c collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] collector current : ic [a] collector current : ic [a] 40 20 30 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 10 8 6 4 2 0 gate-emitter voltage : vge [v] gate-emitter voltage : vge [v] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 0 10 20 30 40 50 collector current : ic [a] collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 inverter 50 60 40 20 30 10 50 60 0 10 20 30 40 50
igbt module 7mbr25ne120 switching time vs. rg vcc=600v, ic=25a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : rg [ohm] 100 gate charge : qg [nc] 0 100 200 300 400 500 100 1000 1000 800 600 400 200 0 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : vce [v] forward current : if [a] 40 20 30 10 0 0 1 2 3 4 5 gate-emitter voltage : vge [v] 0 5 15 20 25 forward voltage : vf [v] reverse recovery current : irr [a] reverse recovery time : trr [n sec.] forward current vs. forward voltage vge=0v reverse recovery characteristics trr, irr, vs. if forward current : if [a] 10 100 1 thermal resistance : rth (j-c) [c/w] transient thermal resistance 0.1 1 0.001 0.01 0.1 1 pulse width : pw [sec.] reversed biased safe operating area +vge=15v, -vge = 15v, tj = 125c, rg = 51 ohm 0 10 20 30 40 50 << > 250 200 150 100 50 0 0 200 400 600 800 1000 1200 collector-emitter voltage : vce [v] collector current : ic [a] 10 50 60 0.01
igbt module 7mbr25ne120 switching loss vs. collector current vcc=600v, rg=51 ohm, vge=15v switching loss : eon, eoff, err [mj /cycle] collector current : ic [a] 0 4 2 6 8 0 10 20 30 40 50 collector-emitter voltage : vce [v] 0 5 10 15 20 25 30 35 0.1 1 10 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c forward current : if [a] 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 forward voltage : vf [v] converter diode forward current vs. forward voltage 10
igbt module 7mbr25ne120 collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=600v, rg=82 ohm, vge=15v, tj=25c switching time vs. collector current vcc=600v, rg=82 ohm, vge=15v, tj=125c collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] collector current : ic [a] collector current : ic [a] 30 20 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 10 8 6 4 2 0 gate-emitter voltage : vge [v] gate-emitter voltage : vge [v] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 0 10 20 30 collector current : ic [a] collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 brake 30 20 10 0 10 20 30
igbt module 7mbr25ne120 switching loss vs. collector current vcc=600v, rg=82 ohm, vge=15v switching loss : eon, eoff, err [mj /cycle] collector current : ic [a] 0 1 0 5 10 15 20 25 30 collector-emitter voltage : vce [v] 0 5 10 15 20 25 30 35 0.1 1 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c switching time vs. rg vcc=600v, ic=15a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : rg [ohm] gate charge : qg [nc] 0 50 100 150 200 250 300 100 1000 1000 800 600 400 200 0 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : vce [v] gate-emitter voltage : vge [v] 0 5 10 15 20 25 reversed biased safe operating area +vge=15v, -vge = 15v, tj = 125c, rg = 82 ohm << > 100 80 60 40 20 0 0 200 400 600 800 1000 1200 collector-emitter voltage : vce [v] collector current : ic [a] 100 2 120 160 3 4 5 6 10
igbt module 7mbr25ne120 outline drawings, mm
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