1 transistor 2SB1473 silicon pnp epitaxial planer type for low-frequency output amplification complementary to2sd2225 n features l high collector to emitter voltage v ceo . l satisfactory linearity of forward current transfer ratio h fe . l high transition frequency f t . l allowing supply with the radial taping. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:emitter 2:collector 3:base mt2 type package 2.5 0.1 4.5 0.1 14.5 0.5 2.5 0.5 2.5 0.5 2.5 0.1 6.9 0.1 1.05 0.05 (1.45) 4.0 0.7 0.8 0.15 0.5 0.2 1.0 1.0 0.65 max. 0.45 +0.1 ?.05 0.45 +0.1 ?.05 3 2 1 symbol v cbo v ceo v ebo i cp i c p c * t j t stg ratings C120 C120 C5 C1 C 0.5 1 150 C55 ~ +150 unit v v v a a w ?c ?c n electrical characteristics (ta=25?c) parameter collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol v ceo v ebo h fe1 *1 h fe2 v ce(sat) v be(sat) f t c ob conditions i c = C0.1ma, i b = 0 i e = C10 m a, i c = 0 v ce = C10v, i c = C150ma v ce = C5v, i c = C500ma *2 i c = C300ma, i b = C30ma *2 i c = C300ma, i b = C30ma *2 v cb = C10v, i e = 50ma, f = 200mhz v cb = C10v, i e = 0, f = 1mhz min C120 C5 90 50 typ 250 max 330 C1.0 C1.2 30 unit v v v v mhz pf * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion *1 h fe1 rank classification rank q r s h fe1 90 ~ 155 130 ~ 220 185 ~ 330 *2 pulse measurement 1.2 0.1 0.65 max. 0.45 0.1 0.05 + note: in addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (hw type)
2 transistor 2SB1473 0 200 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 printed circut board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion. ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?0 ? ? ? ? 0 ?.2 ?.0 ?0.8 ?0.6 ?0.4 ?0.2 ta=25?c i b =?0ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0 500 400 300 200 100 450 350 250 150 50 v ce =?0v ta=100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =10 ?5?c ta=75?c 25?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 1 3 10 30 100 0 320 240 80 200 280 160 40 120 v cb =?0v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 45 35 25 15 5 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) p c ta i c v ce h fe i c v be(sat) i c v ce(sat) i c f t i e c ob v cb
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