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rf & protection devices data sheet revision 3.8, 2010-12-23 BGA735N16 high linearity tri-band lte/umts lna (2600/2300/2100, 1900 /1800, 900/800/700 mhz)
edition 2010-12-23 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGA735N16 high linearity tri-band lte/umts lna data sheet 3 revision 3.8, 2010-12-23 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pr o-sil?, profet?, rasic?, re versave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlew is?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 BGA735N16 high linearity tri-band lte/umts lna (2600/2300/2100, 1900/18 00, 900/800/700 mhz) revision history: 2010-12-23, revision 3.8 previous revision: 2010-09-06, revision 3.7 page subjects (major cha nges since last revision) 13-14 added lte bands 12, 13, 14, 17 21-22 added lte bands 38, 40
BGA735N16 high linearity tri-band lte/umts lna table of contents data sheet 4 revision 3.8, 2010-12-23 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.4 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.5 band select / gain control truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.6 supply current characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.7 logic signal characteristics; t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.8 switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.9 measured rf characteristics umts bands 12 / 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 2.10 measured rf characteristics umts bands 13 / 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.11 measured rf characteristics umts band 20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.12 measured rf characteristics umts bands 5 / 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2.13 measured rf characteristics umts band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2.14 measured rf characteristics umts bands 3 / 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2.15 measured rf characteristics umts band 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2.16 measured rf characteristics umts bands 1 / 4 / 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.17 measured rf characteristics umts band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2.18 measured rf characteristics umts band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.19 measured rf characteristics umts band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.1 umts bands 1, 2, 4, 5, 6 and 10 application circuit schema tic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3.2 umts bands 3, 7, 8, 9 and 38 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 3.3 umts bands 2, 12, 13, 14, 17 and 40 application circuit sc hematic . . . . . . . . . . . . . . . . . . . . . . . . 26 3.4 umts bands 1, 2, 4, 10 and 20 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.5 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 3.6 application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 4.2 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 table of contents
BGA735N16 high linearity tri-band lte/umts lna list of figures data sheet 5 revision 3.8, 2010-12-23 figure 1 block diagram of tri-band lna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 figure 3 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 4 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 5 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 6 application board layout on 3-layer fr4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 7 cross-section view of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 figure 8 detail of application board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 figure 9 recommended footprint and stencil layout for the tsnp-16-1 package . . . . . . . . . . . . . . . . . . 31 figure 10 package outline (top, side and bott om view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 list of figures
BGA735N16 high linearity tri-band lte/umts lna list of tables data sheet 6 revision 3.8, 2010-12-23 table 1 absolute maximum ra tings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4 dc characteristics, t a =-30 ... 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5 band select truth table, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 6 gain control truth table, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 7 typical switching times; t a = -30 ... 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 8 typical characteristics 700 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 9 typical characteristics 700 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 10 typical characteristics 800 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 11 typical characteristics 800 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 12 typical characteristics 900 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 13 typical characteristics 1800 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 18 table 14 typical characteristics 1900 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 19 table 15 typical characteristics 2100 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 20 table 16 typical characteristics 2300 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 21 table 17 typical characteristics 2600 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 22 table 18 typical characteristics 2600 mhz band, t a =25c, v cc = 2.8 v . . . . . . . . . . . . . . . . . . . . . . . . 23 table 19 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 table 20 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 table 21 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table 22 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table 23 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 list of tables
product name package chip marking BGA735N16 tsnp-16-1 t1530 bga735 high linearity tri-band lte / u m t s l n a (2600/2300/2100, 1900/1800, 900/800/700 mhz) BGA735N16 data sheet 7 revision 3.8, 2010-12-23 1 features main features: ? gain: 16 (17) / -7.5 db in high / low gain mode (all bands) ? noise figure: 1.1 / 1.1 / 1.1 db in high gain mode (800 mhz / 1900 mhz / 2100 mhz) ? supply current: 3.4 (4.0) / 0.65 ma in high / low gain mode (all bands) ? standby mode (< 2 a typ.) ? output internally matched to 50 ? ? inputs pre-matched to 50 ? ? 2kv hbm esd protection ? low external component count ? small leadless tsnp-16-1 package (2.3 x 2.3 x 0.39 mm) ? pb-free (rohs compliant) package description the BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 mhz) low noise amplifier mmic for worldwide use. based on infineon?s proprietary and cost-effective sige:c technology, the BGA735N16 uses an advanced biasing conc ept in order to achieve high linearity. the device features dynamic gain co ntrol, temperature stabilization, standby mode, and 2 kv esd protection on- chip as well as matching off chip. because the matchi ng is off chip, different lte/umts bands can be easily applied. for example, the 1900 mhz path can be conver ted into a 2100 mhz path and vice versa by optimizing the input and output matching network. note: lte/umts bands 1/ 2/ 5 is the standard band combin ation for this product requiring no external output matching network.
BGA735N16 high linearity tri-band lte/umts lna features data sheet 8 revision 3.8, 2010-12-23 figure 1 block diagram of tri-band lna %*$1b&klsb%o'yvg %ldvlqj /rjlf &lufxlwu\ 9&& 9*6 5)2870 5)287+ 5)287/ 9(1 9(1 5),1/ 5),10 5),1+ qf qf 5)*1'+ 5)*1'0 qf 55()
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 9 revision 3.8, 2010-12-23 2 electrical characteristics 2.1 absolute maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 thermal resistance 2.3 esd integrity table 1 absolute maximum ratings parameter symbol values unit note / test condition min. typ. max. supply voltage v cc -0.3 ? 3.6 v ? supply current i cc ??10ma? pin voltage v pin -0.3 ? v cc +0.3 v all pins except rf input pins. pin voltage rf input pins v rfin -0.3 ? 0.9 v ? rf input power p rfin ??4dbm? junction temperature t j ??150c? ambient temperature range t a -30 ? 85 c ? storage temperature range t stg -65 ? 150 c ? table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. thermal resistance junction to soldering point r thjs ?? 37 k/w ? table 3 esd integrity parameter symbol values unit note / test condition min. typ. max. esd hardness hbm 1) 1) according to jesd22-a114 v esd-hbm ? 2000 ? v all pins
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 10 revision 3.8, 2010-12-23 2.4 dc characteristics 2.5 band select / gain control truth table table 4 dc characteristics, t a =-30 ... 85 c parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 2.6 2.8 3.0 v ? supply current high gain mode i cchg ?4.0 3.4 ? ma high band mid and low band supply current low gain mode i cclg ? 650 ? a all bands supply current standby mode i ccoff ?0.12.0 a? logic level high v hi 1.5 2.8 ? v ven1, ven2 and vgs logic level low v lo ?0.00.5v logic currents ven i enl ?0.1? a ven1 and ven2 i enh ?10.0? a logic currents vgs i gsl ?0.1? avgs i gsh ?5.0? a table 5 band select truth table, v cc =2.8v high band mid band low band power down ven1 hhl l ven2 hl hl table 6 gain control truth table, v cc =2.8v high gain low gain vgs h l
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 11 revision 3.8, 2010-12-23 2.6 supply current characteristics; t a =25c supply current high gain mode versus resistance of reference resistor r ref (see figure 2 on page 24; low gain mode supply current is independent of reference resistor). supply current highband i cc =f ( r ref ) v cc =2.8v supply current midband i cc =f ( r ref ) v cc =2.8v supply current lowband i cc =f ( r ref ) v cc =2.8v 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma] 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma] 1 10 100 2 3 4 5 6 7 8 9 r ref [k ? ] icc [ma]
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 12 revision 3.8, 2010-12-23 2.7 logic signal characteristics; t a =25c current consumption of logi c inputs ven1, ven2, vgs 2.8 switching times logic currents i en1,2 = f( v en1,2 ) v cc =2.8v logic currents i gs = f( v gs ) v cc =2.8v table 7 typical switching times; t a = -30 ... 85 c parameter symbol values unit note / test condition min. typ. max. gainstep settling time t gs ?1? s switching lg ? hg all bands bandselect settling time t bs ?1? s switching from any band to a different band (pins ven1,2) 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 v en1,2 [v] i en1,2 [a] 0 0.5 1 1.5 2 2.5 3 0 2 4 6 v gs [v] i gs [a]
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 13 revision 3.8, 2010-12-23 2.9 measured rf characteristics umts bands 12 / 17 table 8 typical characteristics 700 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 4 on page 26 parameter symbol values unit note / test condition min. typ. max. pass band range band 12 728 ? 746 mhz ? pass band range band 17 734 ? 746 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 15.2 ? db high gain mode s 21lg ? -9.2 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -39 ? db high gain mode s 12lg ? -9.2 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 9.2 ? db low gain mode input return loss 2) s 11hg ?-15?db 50 ?, high gain mode s 11lg ?-16?db 50 ?, low gain mode output return loss 2) s 22hg ?-19?db 50 ? , high gain mode s 22lg ?-12?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -6 ? dbm high gain mode ip 1dblg ? -10 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-11 -1 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 14 revision 3.8, 2010-12-23 2.10 measured rf characteristics umts bands 13 / 14 table 9 typical characteristics 700 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 4 on page 26 parameter symbol values unit note / test condition min. typ. max. pass band range band 13 746 ? 756 mhz ? pass band range band 14 758 ? 768 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 15.3 ? db high gain mode s 21lg ? -8.9 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -39 ? db high gain mode s 12lg ? -8.9 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 8.9 ? db low gain mode input return loss 2) s 11hg ?-15?db 50 ?, high gain mode s 11lg ?-13?db 50 ?, low gain mode output return loss 2) s 22hg ?-20?db 50 ? , high gain mode s 22lg ?-14?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -6 ? dbm high gain mode ip 1dblg ? -10 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-11 -1 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 15 revision 3.8, 2010-12-23 2.11 measured rf characteristics umts band 20 table 10 typical characteristics 800 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 5 on page 27 parameter symbol values unit note / test condition min. typ. max. pass band range band 20 791 ? 821 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 15.3 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -38 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 1.2 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-14?db 50 ?, high gain mode s 11lg ?-15?db 50 ?, low gain mode output return loss 2) s 22hg ?-13?db 50 ? , high gain mode s 22lg ?-20?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -6 ? dbm high gain mode ip 1dblg ? -10 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-10 1 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 16 revision 3.8, 2010-12-23 2.12 measured rf characteristics umts bands 5 / 6 table 11 typical characteristics 800 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 24 parameter symbol values unit note / test condition min. typ. max. pass band range band 5 869 ? 894 mhz ? pass band range band 6 875 ? 885 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 16.0 ? db high gain mode s 21lg ? -7.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -7.5 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 7.5 ? db low gain mode input return loss 2) s 11hg ?-16?db 50 ?, high gain mode s 11lg ?-17?db 50 ?, low gain mode output return loss 2) s 22hg ?-17?db 50 ? , high gain mode s 22lg ?-13?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -6 ? dbm high gain mode ip 1dblg ? -8 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-7 2 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 17 revision 3.8, 2010-12-23 2.13 measured rf characteristics umts band 8 table 12 typical characteristics 900 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 3 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range band 8 925 ? 960 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 16.1 ? db high gain mode s 21lg ? -7.1 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -7.1 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 7.1 ? db low gain mode input return loss 2) s 11hg ?-16?db 50 ?, high gain mode s 11lg ?-15?db 50 ?, low gain mode output return loss 2) s 22hg ?-15?db 50 ? , high gain mode s 22lg ?-16?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -5 ? dbm high gain mode ip 1dblg ? -8 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 2 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 18 revision 3.8, 2010-12-23 2.14 measured rf characteristics umts bands 3 / 9 table 13 typical characteristics 1800 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 3 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range band 3 1805 ? 1880 mhz ? pass band range band 9 1844.9 ? 1879.9 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 16.2 ? db high gain mode s 21lg ? -8.7 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -36 ? db high gain mode s 12lg ? -8.7 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 8.7 ? db low gain mode input return loss 2) s 11hg ?-13?db 50 ?, high gain mode s 11lg ?-14?db 50 ?, low gain mode output return loss 2) s 22hg ?-19?db 50 ? , high gain mode s 22lg ?-15?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.5 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? -6 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 3 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 19 revision 3.8, 2010-12-23 2.15 measured rf characteristics umts band 2 table 14 typical characteristics 1900 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 24 parameter symbol values unit note / test condition min. typ. max. pass band range band 2 1930 ? 1990 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 16.0 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -35 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-19?db 50 ?, high gain mode s 11lg ?-18?db 50 ?, low gain mode output return loss 2) s 22hg ?-20?db 50 ? , high gain mode s 22lg ?-15?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.4 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? -7 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-6 3 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 20 revision 3.8, 2010-12-23 2.16 measured rf characteristics umts bands 1 / 4 / 10 table 15 typical characteristics 2100 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 2 on page 24 parameter symbol values unit note / test condition min. typ. max. pass band range band 1 2110 ? 2170 mhz ? pass band range band 4 2110 ? 2155 mhz ? pass band range band 10 2110 ? 2170 mhz ? current consumption i cchg ? 4.0 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 17.2 ? db high gain mode s 21lg ? -7.8 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -35 ? db high gain mode s 12lg ? -7.8 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 7.8 ? db low gain mode input return loss 2) s 11hg ?-16?db 50 ?, high gain mode s 11lg ?-17?db 50 ?, low gain mode output return loss 2) s 22hg ?-23?db 50 ? , high gain mode s 22lg ?-12?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.3 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -10 ? dbm high gain mode ip 1dblg ? -6 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-3 3 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 21 revision 3.8, 2010-12-23 2.17 measured rf characteristics umts band 40 table 16 typical characteristics 2300 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 4 on page 26 parameter symbol values unit note / test condition min. typ. max. pass band range band 40 2300 ? 2400 mhz ? current consumption i cchg ? 4.0 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 17.1 ? db high gain mode s 21lg ? 7.0 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -33 ? db high gain mode s 12lg ? -7.0 ? db low gain mode noise figure nf hg ? 1.1 ? db high gain mode nf lg ? 7.0 ? db low gain mode input return loss 2) s 11hg ?-20?db 50 ?, high gain mode s 11lg ?-18?db 50 ?, low gain mode output return loss 2) s 22hg ?-20?db 50 ? , high gain mode s 22lg ?-11?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.0 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -10 ? dbm high gain mode ip 1dblg ? -4 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-2 6 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 22 revision 3.8, 2010-12-23 2.18 measured rf characteristics umts band 38 table 17 typical characteristics 2600 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 3 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range band 38 2570 ? 2620 mhz ? current consumption i cchg ? 3.4 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 15.5 ? db high gain mode s 21lg ? -6.5 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -33 ? db high gain mode s 12lg ? -6.5 ? db low gain mode noise figure nf hg ? 1.2 ? db high gain mode nf lg ? 6.5 ? db low gain mode input return loss 2) s 11hg ?-14?db 50 ?, high gain mode s 11lg ?-13?db 50 ?, low gain mode output return loss 2) s 22hg ?-13?db 50 ? , high gain mode s 22lg ?-13?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.0 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? -2 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-3 7 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna electrical characteristics data sheet 23 revision 3.8, 2010-12-23 2.19 measured rf characteristics umts band 7 table 18 typical characteristics 2600 mhz band, t a =25c, v cc =2.8v 1) 1) performance based on application circuit in figure 3 on page 25 parameter symbol values unit note / test condition min. typ. max. pass band range band 7 2620 ? 2690 mhz ? current consumption i cchg ? 4.0 ? ma high gain mode i cclg ? 0.65 ? ma low gain mode gain s 21hg ? 15.6 ? db high gain mode s 21lg ? -6.3 ? db low gain mode reverse isolation 2) 2) verification based on aql; random production test. s 12hg ? -32 ? db high gain mode s 12lg ? -6.3 ? db low gain mode noise figure nf hg ? 1.2 ? db high gain mode nf lg ? 6.3 ? db low gain mode input return loss 2) s 11hg ?-16?db 50 ?, high gain mode s 11lg ?-12?db 50 ?, low gain mode output return loss 2) s 22hg ?-14?db 50 ? , high gain mode s 22lg ?-13?db 50 ? , low gain mode stability factor 3) 3) guaranteed by device design; not tested in production. k ? >2.0 ? dc to 8 ghz; all gain modes input compression point 2) ip 1dbhg ? -7 ? dbm high gain mode ip 1dblg ? -3 ? dbm low gain mode inband iip3 2) f 1 - f 2 = 1 mhz iip3 hg iip3 lg ?-2 9 ? dbm high gain mode low gain mode
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 24 revision 3.8, 2010-12-23 3 application circuit and block diagram 3.1 umts bands 1, 2, 4, 5, 6 and 10 application ci rcuit schematic figure 2 application circuit with chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 19 bill of materials part number part type manufacturer size comment l1 ... l3 chip inductor various 0402 wirewound, q 50 c1 ... c7 chip capacitor various 0402 r ref chip resistor various 0402 BGA735N16_appl_bands_1_2_4_5_6_10_bld.vsd c1 10 pf l1 v cc = 2 .8v v gs = 0 / 2 .8v rfin band 2 v en = 0 / 2.8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm rref l1 3 .3nh rfout bands 1 / 4 / 10 c7 10nf r ref 27 k ? n/c c2 22pf c3 10 pf l1 rfin bands 1 / 4 / 10 l2 2 .7nh c4 22pf c5 3.0 pf l1 rfin bands 5 / 6 l3 9.1nh c6 22 pf v en = 0 / 2.8v rfout band 2 rfout bands 5 / 6
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 25 revision 3.8, 2010-12-23 3.2 umts bands 3, 7, 8, 9 and 38 application circuit schematic figure 3 application circuit with chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 20 bill of materials part number part type manufacturer size comment l1 ... l6 chip inductor various 0402 wirewound, q 50 c1 ... c9 chip capacitor various 0402 r ref chip resistor various 0402 BGA735N16_appl_bands_3_7_8_9_38_bld.vsd c1 22pf l1 v cc = 2.8v v gs = 0 / 2 .8v rfin bands 3 / 9 v en = 0 / 2.8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm rref l1 4.3 nh rfout bands 7 / 38 rfout band 8 l6 3.3nh rfout bands 3 / 9 l4 1.5nh c9 10nf r ref 27 k ? n/c c2 22pf c3 22pf l1 rfin bands 7 / 38 l2 2.4nh c4 3pf c5 3pf l1 rfin band 8 l3 8.5nh c6 22pf c7 1.5pf v en = 0 / 2.8v l5 3.9 nh c8 1pf
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 26 revision 3.8, 2010-12-23 3.3 umts bands 2, 12, 13, 14, 17 a nd 40 application ci rcuit schematic figure 4 application circuit with chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 21 bill of materials part number part type manufacturer size comment l1 ... l5 chip inductor various 0402 wirewound, q 50 c1 ... c8 chip capacitor various 0402 r ref chip resistor various 0402 rfin band 40 BGA735N16_appl_bands_2_12_13_14_17_40_bld.vsd c1 10 pf l1 v cc = 2.8v v gs = 0 / 2.8v rfin band 2 v en = 0 / 2.8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm rref l1 3.3nh rfout band 40 rfout band 2 c8 10nf r ref 27 k ? n/c c2 22pf c3 56 pf l1 l2 2.7nh c4 10pf c5 3pf l1 rfin bands 12 / 13 / 14 / 17 l3 11nh c6 100pf v en = 0 / 2 .8v l4 3.6nh c7 8 .2pf l5 7.5nh rfout bands 12 / 13 / 14 / 17
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 27 revision 3.8, 2010-12-23 3.4 umts bands 1, 2, 4, 10 and 20 application circuit schematic figure 5 application circuit with chip outline (top view) note: package paddle (pin 0) has to be rf grounded. table 22 bill of materials part number part type manufacturer size comment l1 ... l4 chip inductor various 0402 wirewound, q 50 c1 ... c8 chip capacitor various 0402 r ref chip resistor various 0402 BGA735N16_appl_bands_1_2_4_10_20_bld.vsd c1 10pf l1 v cc = 2.8v v gs = 0 / 2.8v rfin band 2 v en = 0 / 2 .8v 0 gnd 8 7 6 9 10 11 12 13 14 15 16 1 2 3 4 5 biasing & logic circuitry vcc vgs rfoutm rfouth rfoutl ven 1 ven2 rfinl rfinm rfinh n/c n/c rfgndh rfgndm rref l1 3.3nh rfout bands 1 / 4 / 10 rfout band 2 c8 10nf r ref 27 k ? n/c c2 22pf l1 c5 3.3pf l1 rfin band 20 l3 9.1 nh c6 100 pf v en = 0 / 2 .8v c7 8 .2pf l4 9.1nh rfout band 20 c3 10pf l rfin bands 1 / 4 / 10 l2 2 .7nh c4 22pf
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 28 revision 3.8, 2010-12-23 3.5 pin description table 23 pin definition and function pin no. name pin type buffer type function 0 gnd ? ? ground connection for low band lna and control circuitry (package paddle) 1 n/c ? ? not connected 2 vgs ? ? gain step control 3 vcc ? ? supply voltage 4 rfgndh ? ? high band lna emitter ground 5 n/c ? ? not connected 6 rfinm ? ? mid band lna input 7 rfinh ? ? high band lna input 8 rfgndm ? ? mid band lna emitter ground 9 n/c ? ? not connected 10 rfinl ? ? low band lna input 11 ven2 ? ? band select control 12 ven1 ? ? band select control 13 rref ? ? bias current reference resistor (high gain mode) 14 rfoutl ? ? low band output 15 rfouth ? ? high band lna output 16 rfoutm ? ? mid band lna output
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 29 revision 3.8, 2010-12-23 3.6 application board figure 6 application board layout on 3-layer fr4 note: top layer thickness: 0.2 mm, bo ttom layer thickness: 0.660 mm, 17 m cu metallization, gold plated. board size: 21mm x 50 mm. figure 7 cross-section view of application board %*$1b$ssb%rdugyvg 7rs/d\huwrsylhz %rwwrp/d\huwrsylhz 0lggoh/d\huwrsylhz %*$1b&urvvb6hfwlrqb9lhzyvg pp&rsshu pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu pp)5 pp3uhsuhj)5 pp3uhsuhj)5 pp&rsshu
BGA735N16 high linearity tri-band lte/umts lna application circuit and block diagram data sheet 30 revision 3.8, 2010-12-23 figure 8 detail of application board layout note: in order to achieve the same performance as given in this datasheet please follow the suggested pcb-layout as closely as possible. the position of th e gnd vias is critical for rf performance. %*$1b$ssb%rdugbghwdloyvg 5),1+ *1' 5),10 5)*1'0 5)287+ 5)2870 5)287/ (1 5),1/ *6 9&& 5 5() (1 5*1'+ qf
BGA735N16 high linearity tri-band lte/umts lna physical characteristics data sheet 31 revision 3.8, 2010-12-23 4 physical characteristics 4.1 package footprint figure 9 recommended footprint and stencil layout for the tsnp-16-1 package 7613)3yvg
BGA735N16 high linearity tri-band lte/umts lna physical characteristics data sheet 32 revision 3.8, 2010-12-23 4.2 package dimensions figure 10 package outline (top, side and bottom view) 761332yvg
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