bcv 61 1 sep-30-1999 npn silicon double transistor ? to be used as a current mirror ? good thermal coupling and v be matching ? high current gain ? low collector-emitter saturation voltage vps05178 2 1 3 4 eha00012 c2 (1) tr.2 tr.1 c1 (2) e1 (3) e2 (4) type marking pin configuration package bcv 61a bcv 61b bcv 61c 1js 1ks 1ls 1 = c2 1 = c2 1 = c2 2 = c1 2 = c1 2 = c1 3 = e1 3 = e1 3 = e1 4 = e2 4 = e2 4 = e2 sot-143 sot-143 sot-143 maximum ratings parameter value symbol unit v ceo 30 v collector-emitter voltage (transistor t1) v cbo 30 collector-base voltage (open emitter) (transistor t1) 6 v ebs emitter-base voltage dc collector current ma 100 i c peak collector current i cm 200 base peak current (transistor t1) i bm 200 total power dissipation , t s = 99 c 300 mw p tot junction temperature c 150 t j -65 ... 150 t st g storage temperature thermal resistance junction ambient 1) r thja 240 k/w junction - soldering point r thjs 170 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bcv 61 2 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics of t1 collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo - 30 v - collector-base breakdown voltage i c = 10 a, i b = 0 v (br)cbo - - 30 emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 6 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - na 15 collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - - a 5 dc current gain 1) i c = 0.1 ma, v ce = 5 v h fe - - 100 - dc current gain 1) i c = 2 ma, v ce = 5 v h fe 110 200 420 180 290 520 220 450 800 collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 90 200 250 600 mv - - base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - - 700 900 v besat 580 - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v 660 - 700 770 v be(on) bcv 61a bcv 61b bcv 61c 1) pulse test: t 300 s, d = 2%
bcv 61 3 sep-30-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter values symbol unit max. min. typ. characteristics v bes 0.4 - base-emitter forward voltage i e = 10 a i e = 250 ma - 1.8 - - v i c1 / i c2 - 0.7 0.7 - 1.3 1.3 matching of transistor t1 and transistor t2 at i e2 = 0.5ma and v ce1 = 5v t a = 25 c t a = 150 c - - - - i e2 - ma 5 thermal coupling of transistor t1 and transistor t2 1) t1: v ce = 5v maximum current of thermal stability of i c1 - ac characteristics for transistor t1 transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz c cb 3 - collector-base capacitance v cb = 10 v, f = 1 mhz pf - c eb 8 emitter-base capacitance v eb = 0.5 v, f = 1 mhz - - noise figure i c = 200 a, v ce = 5 v, r s = 2 k ? , f = 1 khz, ? f = 200 hz db f - 2 - h 11e - 4.5 short-circuit input impedance i c = 1 ma, v ce = 10 v, f = 1 khz k ? - open-circuit reverse voltage transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz 10 -4 h 12e - 2 - short-circuit forward current transf.ratio i c = 1 ma, v ce = 10 v, f = 1 khz h 21e 100 - 900 - open-circuit output admittance i c = 1 ma, v ce = 10 v, f = 1 khz h 22e - 30 - s 1) witout emitter resistor. device mounted on alumina 15mm x 16.5mm x 0.7mm
bcv 61 4 sep-30-1999 test circuit for current matching ehn00001 t1 t2 ... a 21 4 3 v ce1 co v co v c1 e2 = constant note: voltage drop at contacts: v co < 2/3 v t = 16mv characteristic for determination of v ce1 at specified r e range with i e2 as parameter under condition of i c1 / i e2 = 1.3 ehn00002 t1 t2 ... a 21 4 3 v ce1 c1 e2 = constant r e r e note: bcv 61 with emitter resistors
bcv 61 5 sep-30-1999 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00940 bcv 61 a t 150 50 100 ?c p tot t s ; t a s t 100 200 300 mw 400 permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00942 bcv 61 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
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