? semiconductor components industries, llc, 2009 october, 2009 ? rev. 14 1 publication order number: bu323z/d bu323z npn silicon power darlington high voltage autoprotected the bu323z is a planar, monolithic, high ? voltage power darlington with a built ? in active zener clamping circuit. this device is specifically designed for unclamped, inductive applications such as electronic ignition, switching regulators and motor control, and exhibit the following main features: ? integrated high ? voltage active clamp ? tight clamping voltage window (350 v to 450 v) guaranteed over the ? 40 c to +125 c temperature range ? clamping energy capability 100% tested in a live ignition circuit ? high dc current gain/low saturation voltages specified over full temperature range ? design guarantees operation in soa at all times ? offered in plastic sot ? 93/to ? 218 type or to ? 220 packages ? pb ? free packages are available* maximum ratings rating symbol max unit collector ? emitter sustaining voltage v ceo 350 vdc collector ? emitter voltage v ebo 6.0 vdc collector current ? continuous ? peak i c i cm 10 20 adc base current ? continuous ? peak i b i bm 3.0 6.0 adc total power dissipation @ t c = 25 c derate above 25 c p d 150 1.0 w w/ c operating and storage junction temperature range t j , t stg ? 65 to + 175 c thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 1.0 c/w maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 93 case 340d style 1 10 ampere darlington autoprotected 360 ? 450 volts clamp, 150 watts marking diagram http://onsemi.com ayww BU323ZG a = assembly location y = year ww = work week g=pb ? free package bu323z = device code device package shipping ordering information bu323z sot ? 93 30 units / rail BU323ZG sot ? 93 (pb ? free) 30 units / rail 360 v clamp collector 2,4 base 1 emitter 3 3 2 1 4
bu323z http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) collector ? emitter clamping voltage (i c = 7.0 a) (t c = ? 40 c to +125 c) v clamp 350 ? 450 vdc collector ? emitter cutoff current (v ce = 200 v, i b = 0) i ceo ? ? 100 adc emitter ? base leakage current (v eb = 6.0 vdc, i c = 0) i ebo ? ? 50 madc on characteristics (1) base ? emitter saturation voltage (i c = 8.0 adc, i b = 100 madc) (i c = 10 adc, i b = 0.25 adc) v be(sat) ? ? ? ? 2.2 2.5 vdc collector ? emitter saturation voltage (i c = 7.0 adc, i b = 70 madc) (t c = 125 c) (i c = 8.0 adc, i b = 0.1 adc) (t c = 125 c) (i c = 10 adc, i b = 0.25 adc) v ce(sat) ? ? ? ? ? ? ? ? ? ? 1.6 1.8 1.8 2.1 1.7 vdc base ? emitter on voltage (i c = 5.0 adc, v ce = 2.0 vdc) (t c = ? 40 c to +125 c) (i c = 8.0 adc, v ce = 2.0 vdc) v be(on) 1.1 1.3 ? ? 2.1 2.3 vdc diode forward voltage drop (i f = 10 adc) v f ? ? 2.5 vdc dc current gain (i c = 6.5 adc, v ce = 1.5 vdc) (t c = ? 40 c to +125 c) (i c = 5.0 adc, v ce = 4.6 vdc) h fe 150 500 ? ? ? 3400 ? dynamic characteristics current gain bandwidth (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 mhz) f t ? ? 2.0 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? ? 200 pf input capacitance (v eb = 6.0 v) c ib ? ? 550 pf clamping energy (see notes) repetitive non ? destructive energy dissipated at turn ? off: (i c = 7.0 a, l = 8.0 mh, r be = 100 ) (see figures 2 and 4) w clamp 200 ? ? mj switching characteristics: inductive load (l = 10 mh) fall time (i c = 6.5 a, i b1 = 45 ma, v be(off) = 0, r be(off) = 0, v cc = 14 v, v z = 300 v) t fi ? 625 ? ns storage time t si ? 10 30 s cross ? over time t c ? 1.7 ? s (1) pulse test: pulse width 300 s, duty cycle = 2.0%.
bu323z http://onsemi.com 3 figure 1. i c = f(v ce ) curve shape i c i nom = 6.5 a output transistor turns on: i c = 40 ma high voltage circuit turns on: i c = 20 ma avalanche diode turns on: i c = 100 a icer leakage current 250 v 300 v 340 v v ce v clamp nominal = 400 v by design, the bu323z has a built ? in avalanche diode and a special high voltage driving circuit. during an auto ? protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. this prevents the transistor from going into a reverse bias operating limit condition. therefore, the device will have an extended safe operating area and will always appear to be in ?fbsoa.? because of the built ? in zener and associated network, the i c = f(v ce ) curve exhibits an unfamiliar shape compared to standard products as shown in figure 1. figure 2. basic energy test circuit mercury contacts wetted relay v ce monitor (v gate ) l inductance (8 mh) i b current source v beoff i b2 source i c current source 0.1 non inductive i c monitor r be = 100 the bias parameters, v clamp , i b1 , v be(off) , i b2 , i c , and the inductance, are applied according to the device under test (dut) specifications. v ce and i c are monitored by the test system while making sure the load line remains within the limits as described in figure 4. note: all bu323z ignition devices are 100% energy tested, per the test circuit and criteria described in figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. the device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. the units under test are kept functional during the complete test sequence for the test conditions described: i c(peak) = 7.0 a, i c h = 5.0 a, i c l = 100 ma, i b = 100 ma, r be = 100 , v gate = 280 v, l = 8.0 mh figure 3. forward bias safe operating area v ce , collector-emitter voltage (volts) 1000 340v 100 10 0.001 0.01 0.1 1 10 t c = 25 c 250ms 10ms 1ms 300 s i c , collector current (amps) thermal limit second breakdown limit curves apply below rated v ceo
bu323z http://onsemi.com 4 figure 4. energy test criteria for bu323z the shaded area represents the amount of energy the device can sustain, under given dc biases (i c /i b /v be(off) / r be ), without an external clamp; see the test schematic dia- gram, figure 2. the transistor passes the energy test if, for the inductive load and i cpeak /i b /v be(off) biases, the v ce remains outside the shaded area and greater than the v gate minimum limit, figure 4a. the transistor fails if the v ce is less than the v gate (minimum limit) at any point along the v ce /i c curve as shown on figures 4b, and 4c. this assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. the transistor fails if its collector/emitter breakdown voltage is less than the v gate value, figure 4d. i cpeak (a) i c i c high i c low v ce v gate min i cpeak i c i c high i c low v ce v gate min (b) i cpeak i c i c high i c low v ce v gate min (c) i cpeak i c i c high i c low v ce v gate min (d)
bu323z http://onsemi.com 5 figure 5. dc current gain i c , collector current (milliamps) 10000 1000 100 10 100 1000 10000 t j = 125 c 25 c h fe , dc current gain -40 c v ce = 1.5 v figure 6. dc current gain i c , collector current (milliamps) 100000 1000 100 10 100 1000 10000 typical h fe , dc current gain v ce = 5 v, t j = 25 c 10000 typ + 6 typ - 6 figure 7. collector saturation region i b , base current (milliamps) 100 10 1 0 2.5 4.0 5.0 t j = 25 c i c = 3 a v ce , collector-emitter voltage (volts) 4.5 2.0 3.5 3.0 1.0 0.5 1.5 5 a 7 a 8 a 10 a figure 8. collector ? emitter saturation voltage i c , collector current (amps) 10 1 0.1 0.4 1.4 2.0 2.4 v ce , collector-emitter voltage (volts) 2.2 1.2 1.8 1.6 0.8 0.6 1.0 t j = 125 c 25 c i c /i b = 150 figure 9. base ? emitter saturation voltage i c , collector current (amps) 10 1 0.1 0.8 1.8 2.0 1.4 1.6 1.2 1.0 figure 10. base ? emitter ?on? voltages i c , collector current (amps) 10 1 0.1 0.6 1.4 1.8 2.0 1.2 1.6 0.8 1.0 v be , base-emitter voltage (volts) i c /i b = 150 t j = 25 c 125 c v be(on) , base-emitter voltage (volts) v ce = 2 volts t j = 25 c 125 c
bu323z http://onsemi.com 6 package dimensions sot ? 93 (to ? 218) case 340d ? 02 issue e a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bu323z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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