sfh 4650 sfh 4655 engwinklige led in midled-geh?use narrow beam led in midled package lead (pb) free product - rohs compliant sfh 4650 sfh 4655 2005-03-08 1 vorl?ufige daten / preliminary data wesentliche merkmale ? infrarot led mit hoher ausgangsleistung (40 mw) emissionswellenl?nge typ. 850 nm enger abstrahlwinkel ( 20) geringe bauh?he als toplooker und sidelooker einsetzbar sfh 4650: gurtung als toplooker sfh 4655: gurtung als sidelooker anwendungen infrarotbeleuchtung fr cmos kameras ir-datenbertragung sensorik in der automobiltechnik fernsteuerung sicherheitshinweise je nach betriebsart emittieren diese bauteile hochkonzentrierte, nicht sichtbare infrarot- strahlung, die gef?hrlich fr das menschliche auge sein kann. produkte, die diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-norm 60825-1 behandelt werde n. typ type bestellnummer ordering code strahlst?rkegruppierung ( i f = 100 ma, t p = 20 ms) radiant intensity grouping i e (mw/sr) sfh 4650 q65110a1572 >16 (typ. 40) sfh 4655 q65110a1569 >16 (typ. 40) features high power (40 mw) infrared led peak wavelength typ. 850 nm narrow halfangle ( 20) low profile component usable as top-looking and side-looking device sfh 4650: taping as toplooker sfh 4655: taping as sidelooker applications infrared illumination for cmos cameras ir data transmission automotive sensors remote controls safety advices depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. products which incorporate these devices have to follow the safety precautions given in iec 60825-1 ?safety of laser products?.
2005-03-08 2 vorl?ufige daten / preliminary data sfh 4650, sfh 4655 grenzwerte ( t a = 25 c) maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 + 100 c sperrspannung reverse voltage v r 5 v durchlassstrom forward current i f 100 ma sto?strom, = 10 s, d = 0 surge current i fsm 1 a verlustleistung power dissipation p tot 180 mw w?rmewiderstand sperrschicht 1) thermal resistance junction r thja 340 k/w w?rmewiderstand sperrschicht 2) thermal resistance junction r thjs 180 k/w 1) umgebung bei montage auf fr4 platine, padgr??e je 16 mm 2 ambient mounted on pc-board (fr4), padsize 16 mm 2 each 2) l?tstelle bei montage auf metall-block soldering point, mounted on metal block kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der strahlung wavelength at peak emission i f = 100 ma peak 850 nm spektrale bandbreite bei 50% von i max spectral bandwidth at 50% of i max i f = 100 ma ? 35 nm abstrahlwinkel half angle ? 20 grad deg. attention - observe precautions for hand ling - electrostatic sensitive device
vorl?ufige daten / preliminary data sfh 4650, sfh 4655 2005-03-08 3 aktive chipfl?che active chip area a 0.09 mm 2 abmessungen der aktiven chipfl?che dimension of the active chip area l b l w 0.3 0.3 mm schaltzeiten, i e von 10% auf 90% und von 90% auf 10%, bei i f = 100 ma, r l = 50 ? switching times, e from 10% to 90% and from 90% to 10%, i f = 100 ma, r l = 50 ? t r , t f 12 ns durchlassspannung forward voltage i f = 100 ma, t p = 20 ms i f = 1 a, t p = 100 s v f v f 1.5 ( < 1.8) 2.4 (< 3.0) v v sperrstrom reverse current v r = 3 v i r 0.01 ( 10) a gesamtstrahlungsfluss total radiant flux i f = 100 ma, t p = 20 ms e 40 mw temperaturkoeffizient von i e bzw. e , i f = 100 ma temperature coefficient of i e or e , i f = 100 ma tc i ? 0.5 %/k temperaturkoeffizient von v f , i f = 100 ma temperature coefficient of v f , i f = 100 ma tc v ? 0.7 mv/k temperaturkoeffizient von , i f = 100 ma temperature coefficient of , i f = 100 ma tc + 0.2 nm/k kennwerte ( t a = 25 c) characteristics (cont?d) bezeichnung parameter symbol symbol wert value einheit unit
2005-03-08 4 vorl?ufige daten / preliminary data sfh 4650, sfh 4655 strahlst?rke i e in achsrichtung 1) gemessen bei einem raumwinkel ? = 0.01 sr radiant intensity i e in axial direction at a solid angle of ? = 0.01 sr bezeichnung parameter symbol werte values einheit unit -s -t -u strahlst?rke radiant intensity i f = 100 ma, t p = 20 ms i e min i e max 16 32 25 50 40 80 mw/sr mw/sr strahlst?rke radiant intensity i f = 1 a, t p = 100 s i e typ 200 250 300 mw/sr 1) nur eine gruppe in einer verpackungseinheit (streuung kleiner 2:1) 1) only one group in one packing unit, (variation lower 2:1)
vorl?ufige daten / preliminary data sfh 4650, sfh 4655 2005-03-08 5 relative spectral emission i rel = f ( ) max. permissible forward current i f = f ( t a ); r thja = 450 k/w 1) radiation characteristics i rel = f ( ? ) 700 0 nm % ohl01714 20 40 60 80 100 950 750 800 850 i rel 40 20 0 0 100 80 60 ?c t i f ma ohf02533 a 10 20 30 40 50 60 70 80 90 110 ohf02432 0? 20? 40? 60? 80? 100? 120? 0.4 0.6 0.8 1.0 100? 90? 80? 70? 60? 50? 0? 10? 20? 30? 40? 0 0.2 0.4 0.6 0.8 1.0 ? radiant intensity single pulse, t p = 20 s permissible pulse handling capability i f = f ( t p ), t a = 25 c duty cycle d = parameter i e i e 100 ma = f ( i f ) ohl01715 10 -3 ma 10 1 0 10 5 5 10 -1 -2 5 10 e e (100 ma) i i i f 0 10 1 10 2 10 3 10 55 0.05 2 1 0 -1 -2 -3 -4 -5 10 10 10 10 10 t p 10 10 s 10 0 0.1 0.005 0.02 0.01 d = t t a i f d = i p t f p t ohf02532 0.2 0.5 1 0.2 0.4 0.6 0.8 1.0 1.2 forward current i f = f ( v f ) single pulse, t p = 20 s 1) mounted on pc board fr 4 (pad size 16 mm 2 ) ohl01713 f i 10 -4 0.5 1 1.5 2 2.5 v3 10 0 a 0 f v -1 10 5 5 10 -2 -3 5 10
2005-03-08 6 vorl?ufige daten / preliminary data sfh 4650, sfh 4655 ma?zeichnung package outlines ma?e werden in mm angegeben. dimensions are specified in mm. geh?use package mid mit klarem silikonverguss mid casted with clear silicone anschlussbelegung pin configuration pad 1 = anode/ anode pad 2 = kathode / cathode ohf02423 (1.2) 2.35 2.15 isolating area metallisation pad 2 pad 1 metallisation (0.8) 1.7 1.5 0.65 0.45 0.65 0.45 3.3 2.9 metallisation backside silicone area 1) device casted with silicone. 1) avoid mechanical stress on silicone surface.
vorl?ufige daten / preliminary data sfh 4650, sfh 4655 2005-03-08 7 empfohlenes l?tpaddesign recommended solderpad design bauteil positioniert component location on pad 4.5 1.7 1.25 verbesserte w?rmeableitung ohf02421 solder resist cu-fl?che > 16 mm paddesign for improved l?tstopplack heat dissipation padgeometrie f?r cu-area 2 ohf02422 4.0 2.4 1.35 padgeometrie f?r heat dissipation l?tstopplack solder resist verbesserte w?rmeableitung paddesign for improved cu-fl?che > 16 mm cu-area 2 component location on pad bauteil positioniert
2005-03-08 8 vorl?ufige daten / preliminary data sfh 4650, sfh 4655 l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 ir-reflow l?tprofil fr bleifreies l?ten (nach j-std-020b) ir reflow soldering profile for lead free soldering (acc. to j-std-020b) verarbeitungshinweis: das geh?use ist mit silikon vergossen. mechanischer stre? auf der bauteiloberfl?che sollte so gering wie m?glich gehalten werden. handling indication: the package is casted with silicone. mechanical stress at the surface of the unit should be as low as possible. published by osram opto semiconductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components 1 may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohla0687 0 0 t t ?c s 120 s max 50 100 150 200 250 300 ramp up 100 s max 50 100 150 200 250 300 ramp down 6 k/s (max) 3 k/s (max) 25 ?c 30 s max 260 ?c +0 ?c -5 ?c 245 ?c ? ?c 240 ?c 255 ?c 217 ?c maximum solder profile recommended solder profile 235 ?c -0 ?c +5 ?c minimum solder profile 10 s min min. condition for ir reflow soldering: solder point temperature 235 c for at least 10 sec.
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