elektronische bauelemente BC847PN npn - pnp silicon multi-chip transistor 20-oct-2009 rev. c page 1 of 3 rohs compliant product feature ? epitaxial die construction ? two internal isolated npn/pnp transistors in one package ? power dissipation p cm : 0.2 w (temp. = 25 ? c) ? collector current i cm : 0.1a ? collector-base voltage v (br)cbo : 50/-50 v ? operating & storage junction temperature t j , t stg : -55 ? c~+150 ? c marking 7p absolute maximum ratings of tr1 at ta = 25 c parameter symbol value units collector to base voltage v cbo 50 v collector to emitter voltage v ceo 45 v emitter to base voltage v ebo 6 v collector currrent ? continuous i c 100 ma collector power dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55 ~ +150 electrical characteristics of tr 1 (npn transister) at ta = 25 c characteristic test condition symbol min. typ. max. unit collector-base breakdown voltage i c =10 a, i e =0 v (br)cbo 50 v collector-emitter breakdown voltage i c = 10 ma, i b = 0 v (br)ceo 45 v emitter-base breakdown voltage i e =1 a, i c =0 v (br)ebo 6 v collector cutoff current v cb =30v, i e =0 i cbo 15 na emitter cutoff current v eb =5v, i c =0 i ebo 15 na dc current gain v ce =5v, i c =2ma h fe 200 450 i c =10ma, i b =0.5ma v ce(sat) 0.25 v collector-emitter saturation voltage i c =100ma, i b =5ma v ce(sat) 0.6 v i c =10ma, i b =0.5ma v be(sat) 0.7 v base-emitter saturation voltage i c =100ma, i b =5ma v be(sat) 0.9 v i c =10ma, v ce =5v v be(on) 0.58 0.7 v base-emitter voltage i c =10ma, v ce =5v v be(on) 0.72 v collector output capacitance v cb =10v, i e =0, f=1mhz c ob 6.0 pf transition frequency v ce =5v, i c =10ma, f=100mhz f t 100 mhz noise figure v ce =5v, i c =0.2ma, f=1khz rg=2k ? , f=200hz nf 10 db sot-363 ? ? c 1 ? ? b 2 ? ? e 2 ? ? e 1 ? ? b 1 ? ? c 2
elektronische bauelemente BC847PN npn - pnp silicon multi-chip transistor 20-oct-2009 rev. c page 2 of 3 absolute maximum ratings of tr2 at ta = 25 c parameter symbol value units collector to base voltage v cbo -50 v collector to emitter voltage v ceo -45 v emitter to base voltage v ebo -5 v collector currrent ? continuous i c -100 ma collector power dissipation p c 200 mw junction temperature r ja 150 storage temperature t stg -55 ~ -150 electrical characteristics of tr 2 (pnp transister) at ta = 25 c characteristic test condition symbol min. typ. max. unit collector-base breakdown voltage i c =-10 a, i e =0 v (br)cbo -50 v collector-emitter breakdown voltage i c = -10 ma, i b = 0 v (br)ceo -45 v emitter=base breakdown voltage i e =-1 a, i c =0 v (br)ebo -5 v collector cutoff current v cb =-30v, i e =0 i cbo -15 na emitter cutoff current v eb =-5v, i c =0 i ebo -15 na dc current gain v ce =-5v, i c =-2ma h fe 220 475 i c =-10ma, i b =-0.5ma v ce(sat) -0.3 v collector-emitter saturation voltage i c =-100ma, i b =-5ma v ce ( sat ) -0.65 v i c =-10ma , i b =-0.5ma v be(sat) -0.7 v base-emitter saturation voltage i c =-100ma , i b =-5ma v be(sat) -0.95 v i c =-2ma , v c e =-5v v be (o n ) -0.6 -0.75 v base-emitter voltage i c =-10ma, v ce =-5v v be(on) -0.82 v collector output capacitance v cb =-10v, i e =0, f=1mhz c ob 4.5 pf transition frequency v ce =-5v, i c =-10ma, f=100mhz f t 100 mhz noise figure v ce =-5v, i c =-0.2ma, f=1khz rg=2k ? , f=200hz nf 10 db characteristic curves
elektronische bauelemente BC847PN npn - pnp silicon multi-chip transistor 20-oct-2009 rev. c page 3 of 3 characteristic curves
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