View BD190_2778312.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon pnp power transistors BD190 description with to-126 package high current complement to type bd189 applications for use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector-emitter voltage open base -60 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -4 a i b base current -2 a p t total power dissipation t mb 7 70 40 w t j junction temperature -65~150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-a thermal resistance, junction to case 3.12 /w
savantic semiconductor product specification 2 silicon pnp power transistors BD190 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (sus)ceo collector-emitter sustaining voltage i c =-0.1a; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2.0a; i b =-0.2a -1.0 v v be base-emitter on voltage i c =-2a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =-70v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-2v 40 h fe-2 dc current gain i c =-2a ; v ce =-2v 15 f t transition frequency i c =-1.0a; v ce =-10v ;f=1.0mhz 2.0 mhz
savantic semiconductor product specification 3 silicon pnp power transistors BD190 package outline fig.2 outline dimensions

▲Up To Search▲

Price & Availability of BD190

	To Download BD190 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .