HN7G06FU 2007-11-01 1 toshiba multichip discrete device HN7G06FU ? power management switch applications, inverter circuit applications, driver circuit applications and interface circuit applications ? combining transistor and brt reduc es the parts count, enabling the design of more compact equipment with a simpler system configuration. q1: 2sa1955f equivalent q2: rn1104f equivalent q1 absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo ?15 v collector-emitter voltage v ceo ?12 v emitter-base voltage v ebo ?5 v collector current i c ?500 ma base current i b ?50 ma q2 absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 10 v collector current i c 100 ma q1, q2 common ratings (ta = 25c) characteristic symbol rating unit collector power dissipation p c * 200 mw junction temperature t j 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: total rating. 130 mw per element should not be exceeded. unit: mm 1.emitter1 2.base1 3.collector2 4.emitter2 5.base2 6.collector1 (e1) (b1) (c2) (e2) (b2) (c1) jedec D jeita D toshiba 2-2j1a weight: 0.0068 g (typ.) equivalent circuit marking 7 4 a hfe rank type name 6 5 4 1 2 3 q1 q2
HN7G06FU 2007-11-01 2 q1 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit collector cutoff current i cbo v cb = ?15 v, i e = 0 ? ? ? 100 na emitter cutoff current i ebo v eb = ?5 v, i c = 0 ? ? ? 100 na dc current gain h fe ** v ce = ?2 v, i c = ?10 ma 300 ? 1000 v ce (sat)(1) i c = ?10 ma, i b = ?0.5 ma ? ?15 ?30 collector-emitter saturation voltage v ce (sat)(2) i c = ?200 ma, i b = ?10 ma ? ?110 ?250 mv base-emitter saturation voltage v be (sat) i c = ?200 ma, i b = ?10 ma ? ?0.87 ? 1.2 v transition frequency f t v ce = ?2 v, i c = ?10 ma ? 130 ? mhz collector output capacitance c ob v cb = ?10 v, i e = 0, f = 1 mhz ? 4.2 ? pf turn-on time t on ? 40 ? ns storage time t stg ? 280 ? ns switching time fall time t f ? 65 ? ns **: h fe classification a:300~600, b:500~1000 q2 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit i cbo v cb = 50 v, i e = 0 ? ? 100 na collector cutoff current i ceo v ce = 50 v, i e = 0 ? ? 500 na emitter cutoff current i ebo v eb = 10 v, i c = 0 0.082 ? 0.15 ma dc current gain h fe v ce = 5 v, i c = 10 ma 80 ? ? collector-emitter saturation voltage v ce (sat) i c = 5 ma, i b = 0.25 ma ? 0.1 0.3 v input voltage (on) v i(on) v ce = 0.2 v, i c = 5 ma 1.5 ? 5.0 v input voltage (off) v i(off) v ce = 5 v, i c = 0.1 ma 1.0 ? 1.5 v transition frequency f t v ce = 10 v, i c = 5 ma ? 250 ? mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz ? 3 ? pf input resistor r1 ? 32.9 47 61.1 k resistor ratio r1/r2 ? 0.9 1.0 1.1 50 60 output 600 300 v cc = ?6 v v bb = 3 v input 0 v 10 s duty cycle < = 2% ib1 = ?ib2 = ?5 ma
HN7G06FU 2007-11-01 3 q1 ic - vce -0. -0.1 -0.2 -0.3 -0.4 -0.5 - -1-2-3-4-5 common emitter ta = 25c -2 -1 ib=-0.5ma -3 -5 -6 -4 0 0 hfe - ic 10 100 1000 10000 - -1 -10 -100 -1000 common emitter vce = -2v ta = 100c -25 25 -0.1 vbe(sat) - ic - -1 -10 - -1 -10 -100 -1000 common emitter ic/ib = 20 ta = 25 -0.1 -0.1 vce(sat) - ic -1 -10 -100 -1000 - -1 -10 -100 -1000 common emitter ic/ib = 20 25 -0.1 -25 ic - vbe -1 -10 -100 -1000 -1.6 -1.2 -0.8 -0.4 0 common emitter vce = -2v 25 -25 cob - vcb 1 10 100 --1-10-100 ie = 0 f = 1mhz ta = 25 -0.1 collector current ic (a) collector current ic (a) collector-emitter voltage vce (v) collector current ic (a) base-emitter voltage vbe (v) collector-base voltage vcb (v) dc current gain hfe collector current ic (a) colletor emitter saturation voltage vce(sat.) (mv) bases-emitter saturation voltage vbe(sat.) (v) collector current ic (ma) collector output capacitnce cob (pf) ta = 100c ta = 100c
HN7G06FU 2007-11-01 4 q2
HN7G06FU 2007-11-01 5 q1, q2 common ambient temperature ta ( c) p c * ? ta collector power dissipation p c (mw) 400 0 175 125 100 50 150 75 25 300 0 100 200 *:total rating
HN7G06FU 2007-11-01 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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