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www.irf.com 1 03/31/09 IRG6IC30UPBF description this igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak current capability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter
absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v a i c @ t c = 100c continuous collector, v ge @ 15v i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 3.1 c/w r ja junction-to-ambient ??? 65 max. 12 250 25 30 300 -40 to + 150 10lb in (1.1n m) 37 15 0.30 v ce min 600 v v ce(on) typ. @ i c = 25a 1.50 v i rp max @ t c = 25c 250 a t j max 150 c key parameters

2 www.irf.com half sine wave with duty cycle <= 0.02, ton=1.0sec. r is measured at
pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 600 ??? ??? v v (br)ecs emitter-to-collector breakdown voltage 15 ??? ??? v ? v ces / ? t j breakdown voltage temp. coefficient ??? 0.49 ??? v/c ??? 1.29 ??? ??? 1.50 1.92 1.73 ??? v ??? 2.16 ??? ??? 2.88 ??? ??? 1.51 ??? v ge(th) gate threshold voltage 2.6 ??? 5.0 v ? v ge(th) / ? t j gate threshold voltage coefficient ??? -8.9 ??? mv/c i ces collector-to-emitter leakage current ??? 2.0 20 ??? 10 ??? ??? 40 100 ??? 150 ??? i ges gate-to-emitter forward leakage ??? ??? 100 na gate-to-emitter reverse leakage ??? ??? -100 g fe forward transconductance ??? 32 ??? s q g total gate charge ??? 79 ??? nc q gc gate-to-collector charge ??? 30 ??? t d(on) turn-on delay time ??? 20 ??? i c = 25a, v cc = 400v t r rise time ??? 16 ??? ns r g = 10 ? , l=200h t d(off) turn-off delay time ??? 160 ??? t j = 25c t f fall time ??? 120 ??? t d(on) turn-on delay time ??? 18 ??? i c = 25a, v cc = 400v t r rise time ??? 17 ??? ns r g = 10 ? , l=200h t d(off) turn-off delay time ??? 190 ??? t j = 150c t f fall time ??? 240 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j human body model machine model c ies input capacitance ??? 2390 ??? c oes output capacitance ??? 85 ??? pf c res reverse transfer capacitance ??? 58 ??? l c internal collector inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l e internal emitter inductance ??? 7.5 ??? from package esd class 2 ( per jedec standard jesd22-a114 ) class b ( per eia/jedec standard eia/jesd22-a115 ) v ce = 30v v ge = 0v conditions v ge = 0v, i ce = 1.0ma reference to 25c, i ce = 1ma v ge = 15v, i ce = 70a v ge = 15v, i ce = 12a v ge = 15v, i ce = 25a v ge = 0v, i ce = 1.0a ? = 1.0mhz, see fig.13 and center of die contact v ce = 600v, v ge = 0v, t j = 125c l = 220nh, c= 0.40f, v ge = 15v l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c v ce = v ge , i ce = 500a v ce = 600v, v ge = 0v v ce = 600v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v v ce = 600v, v ge = 0v, t j = 100c a ??? 1150 ??? v ce = 25v, i ce = 25a v ce = 400v, i c = 25a, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 25c ??? 1020 ??? v cc = 240v, v ge = 15v, r g = 5.1 ? v ge = 15v, i ce = 120a static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 25a, t j = 150c v ge = 15v, i ce = 40a

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 350 400 450 500 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 350 400 450 500 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0 2 4 6 8 10 12 14 v ce (v) 0 50 100 150 200 250 300 350 400 450 500 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0 2 4 6 8 10 12 14 v ce (v) 0 50 100 150 200 250 300 350 400 450 500 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v v ge = 6.0v 0 5 10 15 20 v ge , gate-to-emitter voltage (v) 0 50 100 150 200 250 300 350 400 450 500 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 0 5 10 15 20 v ge , voltage gate-to-emitter (v) 0 2 4 6 8 10 12 14 16 18 20 v c e , v o l t a g e c o l l e c t o r - t o - e m i t t e r ( v ) t j = 25c t j = 150c i c = 25a

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-emitter voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 170 180 190 200 210 220 230 i c , peak collector current (a) 400 500 600 700 800 900 1000 1100 1200 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 195 200 205 210 215 220 225 230 235 240 v ce, collector-to-emitter voltage (v) 600 700 800 900 1000 1100 1200 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 400 600 800 1000 1200 1400 1600 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 1 10 100 1000 v ce (v) 1 10 100 1000 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 175c single pulse 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 i c ( a ) 25 50 75 100 125 150 case temperature (c) 0 50 100 150 200 250 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1.0s duty cycle <= 0.02 half sine wave

www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 100 200 300 400 500 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 120v v ces = 300v v ces = 400v i c = 25a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.21623 0.000302 0.41114 0.002861 1.31259 0.179036 1.41309 2.673

6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st

www.irf.com 7 to-220ab full-pak package is not recommended for surface mount application. data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/09

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note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to-220ab full-pak package outline dimensions are shown in millimeters (inches) to-220ab full-pak part marking information

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