|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
? !"#$#%%& ' ! ( !) * )+ $ ! ) ! *! * !*)* ? power management in desktop or dc/dc converters sop ? 8 n-channel mosfet apm9945 handling code temp. range package code package code k : sop-8 operating junction temp. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm9945 k : apm9945 xxxxx xxxxx - date code lead free code ? 60v/3a, r ds(on) =100m ? (typ.) @ v gs = 10v r ds(on) =120m ? (typ.) @ v gs = 4.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) g1 s1 d1 d1 (7) (8) (2) (1) g2 s2 d2 d2 (5) (6) (4) (3) g1 s1 s2 g2 d1 d1 d2 d2 note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature. ? !"#$#%%& # (t a = 25 c unless otherwise noted) ! "# (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage 60 v gss gate-source voltage 20 v i d * continuous drain current 3 i dm * pulsed drain current v gs =10v 20 a i s * diode continuous forward current 3 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 2 p d * power dissipation for single operation t a =100 c 0.8 w r ja * thermal resistance-junction to ambient 62.5 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm9945k symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =250 a 60 v i dss zero gate voltage drain current v ds =48v, v gs =0v 1 a v gs(th) gate threshold voltage v ds =v gs , i ds =250 a 1 2 3 v i gss gate leakage current v gs =20v, v ds =0v 100 na v gs =10v, i ds =3a 100 135 r ds(on) a drain-source on-state resistance v gs =4.5v, i ds =2a 120 160 m ? v sd a diode forward voltage i sd =3a, v gs =0v 0.8 1.3 v dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 3.4 ? c iss input capacitance 390 c oss output capacitance 75 c rss reverse transfer capacitance v gs =0v, v ds =25v, frequency=1.0mhz 20 pf t d(on) turn-on delay time 8 18 t r turn-on rise time 9 20 t d(off) turn-off delay time 20 40 t f turn-off fall time v dd =15v, r l =10 ? , i ds =1a, v gen =10v, r g =6 ? 8 20 ns ? !"#$#%%& , notes: a : pulse test ; pulse width 300 s, duty cycle 2 %. b : guaranteed by design, not subject to production testing. apm9945k symbol parameter test condition min. typ. max. unit gate charge characteristics b q g total gate charge 20 26 q gs gate-source charge 5 q gd gate-drain charge v ds =15v, v gs =10v, i ds =3a 5 nc ! "# $"%& (t a = 25 c unless otherwise noted) ? !"#$#%%& - 1e-4 1e-3 0.01 0.1 1 10 30 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 '( "# i d - drain current (a) drain current t j - junction temperature ( c) safe operation area v ds - drain - source voltage (v) thermal transient impedance square wave pulse duration (sec) power dissipation p tot - power (w) t j - junction temperature ( c) i d - drain current (a) 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 2.5 0 20406080100120140160 0 1 2 3 4 0.01 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 s 1ms 100ms dc normalized transient thermal resistance ? !"#$#%%& & r ds(on) - on - resistance ( ? ) drain-source on resistance i d - drain current (a) t j - junction temperature ( c) gate threshold voltage v ds - drain-source voltage (v) i d - drain current (a) output characteristics transfer characteristics v gs - gate - source voltage (v) i d - drain current (a) normalized threshold voltage 0246810 0 2 4 6 8 10 12 14 16 18 20 5v 4v 3v v gs = 6,7,8,9,10v 01234567 0 2 4 6 8 10 12 14 16 18 20 t j =-55 o c t j =125 o c t j =25 o c -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 a '( "# $"%& 0246810 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 v gs =10v v gs =4.5v ? !"#$#%%& . v ds - drain - source voltage (v) drain-source on resistance normalized on resistance t j - junction temperature ( c) c - capacitance (pf) v sd - source - drain voltage (v) source-drain diode forward i s - source current (a) capacitance gate charge q g - gate charge (nc) v gs - gate - source voltage (v) -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 100m ? v gs = 10v i ds = 3a 0.0 0.4 0.8 1.2 1.6 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 frequency=1mhz crss coss ciss 0 5 10 15 20 25 0 2 4 6 8 10 v ds = 15 v i d = 3a '( "# $"%& ? !"#$#%%& / millimeters inches dim min. max. min. max. a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 d 4.80 5.00 0.189 0.197 e 3.80 4.00 0.150 0.157 h 5.80 6.20 0.228 0.244 l 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27bsc 0.50bsc 18 8 h e e1 e2 0.015x45 d a a1 0.004max. 1 l sop-8 pin ( reference jedec registration ms-012) ? !"#$#%%& 0 terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p )" (ir/convection or vpr reflow) " ) #( * sn-pb eutectic assembly pb-free assembly profile feature large body small body large body small body average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature mix (tsmax) time (min to max)(ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds tsmax to t l - ramp-up rate 3 c/second max tsmax to t l temperature(t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(tp) 225 +0/-5 c 240 +0/-5 c 245 +0/-5 c 250 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 10-30 seconds 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. ? !"#$#%%& 1 " ' + a j b t2 t1 c t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245 c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125 c pct jesd-22-b, a102 168 hrs, 100% rh, 121 c tst mil-std 883d-1011.9 -65 c ~ 150 c, 200 cycles (' application a b c j t1 t2 w p e 330 1 62 1.5 12.75 + 0.1 5 2 + 0.5 12.4 +0.2 2 0.2 12 + 0.3 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sop-8 5.5 0.1 1.55 0.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1 5.2 0.1 2.1 0.1 0.3 0.013 (mm) ? !"#$#%%& '% " * , anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 ", ' application carrier width cover tape width devices per reel sop- 8 12 9.3 2500 |
Price & Availability of APM9945KC-TU |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |