2002-06-10 page 1 spd25n06s2-40 opti mos power-transistor product summary v ds 55 v r ds ( on ) 40 m i d 29 a feature n-channel enhancement mode 175c operating temperature avalanche rated d v /d t rated p- to252 -3-11 marking 2n0640 type package ordering code spd25n06s2-40 p- to252 -3-11 q67060-s7427 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c =25c t c =100c i d 29 20 a pulsed drain current t c =25c i d puls 116 avalanche energy, single pulse i d =25a, v dd =25v, r gs =25 e as 80 mj repetitive avalanche energy, limited by t j max 1) e ar 6.8 reverse diode d v /d t i s =25a, v ds =44v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 68 w operating and storage temperature t j , t st g -55... +175 c iec climatic category; din iec 68-1 55/175/56
2002-06-10 page 2 spd25n06s2-40 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 1.45 2.2 k/w thermal resistance, junction - ambient, leaded r thja - - 100 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 55 - - v gate threshold voltage, v gs = v ds i d =26a v gs(th) 2.1 3 4 zero gate voltage drain current v ds =55v, v gs =0v, t j =25c v ds =55v, v gs =0v, t j =125c i dss - - 0.01 1 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =10v, i d =13a r ds(on) - 30 40 m 1 defined by design. not subject to production test. 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2002-06-10 page 3 spd25n06s2-40 electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =20a 8.5 17 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 534 710 pf output capacitance c oss - 138 180 reverse transfer capacitance c rss - 40 60 turn-on delay time t d(on) v dd =30v, v gs =10v, i d =25a, r g =22 - 8.8 13 ns rise time t r - 24 36 turn-off delay time t d(off) - 24 36 fall time t f - 23 35 gate charge characteristics gate to source charge q gs v dd =44v, i d =25a - 3 4 nc gate to drain charge q gd - 6 8 gate charge total q g v dd =44v, i d =25a, v gs =0 to 10v - 13 18 gate plateau voltage v (p lateau ) v dd =44v, i d =25a - 5.7 - v reverse diode inverse diode continuous forward current i s t c =25c - - 29 a inv. diode direct current, pulsed i sm - - 116 inverse diode forward voltage v sd v gs =0v, i f =25a - 0.9 1.3 v reverse recovery time t rr v r =30v, i f = l s , d i f /d t =100a/s - 31 40 ns reverse recovery charge q rr - 40 50 nc
2002-06-10 page 4 spd25n06s2-40 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 5 10 15 20 25 30 35 40 45 50 55 60 w 75 spd25n06s2-40 p tot 2 drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 spd25n06s2-40 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spd25n06s2-40 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a spd25n06s2-40 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 7.5 s
2002-06-10 page 5 spd25n06s2-40 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 5 10 15 20 25 30 35 40 45 50 a 60 i d vgs = 4.5v vgs = 5v vgs = 5.5v vgs = 6v vgs = 6.5v vgs = 7v vgs = 7.5v vgs = 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 a 60 i d 20 30 40 50 60 70 80 90 100 m 120 r ds(on) vgs=5v vgs=5.5v vgs=6v vgs=6.5v vgs=7v vgs=7.5v vgs=10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0 1 2 3 4 5 6 v 8 v gs 0 5 10 15 20 25 30 35 40 a 50 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 4 8 12 16 20 24 a 32 i d 0 2 4 6 8 10 12 14 16 s 20 g fs
2002-06-10 page 6 spd25n06s2-40 9 drain-source on-resistance r ds(on) = f( t j ) parameter: i d = 13 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 10 20 30 40 50 60 70 m 90 r ds(on) 98 % typ. 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 1.5 2 2.5 3 v 4 v gs(th) 26 a 130 a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a spd25n06s2-40 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2002-06-10 page 7 spd25n06s2-40 13 typ. avalanche energy e as = f ( t j ) par.: i d =25a, v dd = 25 v, r gs = 25 25 45 65 85 105 125 145 c 185 t j 0 10 20 30 40 50 60 mj 80 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 29 a pulsed 0 2 4 6 8 10 12 14 16 nc 19 q gate 0 2 4 6 8 10 12 v 16 spd25n06s2-40 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 50 52 54 56 58 60 62 v 66 spd25n06s2-40 v (br)dss
2002-06-10 page 8 spd25n06s2-40 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. further information please notice that the part number is BSPD25N06S2-40, for simplicity the device is referred to by the term spd25n06s2-40 throughout this documentation.
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