features trenchfet power mosfet advanced high cell density process applications load switches ? notebook pcs ? desktop pcs ? game stations pb-free available si4925bdy vishay siliconix document number: 72001 s-50366?rev. c, 28-feb-05 www.vishay.com 1 dual p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) ? 30 0.025 @ v gs = ? 10 v ? 7.1 ? 30 0.041 @ v gs = ? 4.5 v ? 5.5 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1 s 1 g 1 d 1 p-channel mosfet s 2 g 2 d 2 p-channel mosfet ordering information: si4925bdy si4925bdy?t1 (with tape and reel) si4925bdy?e3 (lead (pb)-free) si4925bdy-t1?e3 (lead (pb)-free) with tape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds ? 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d ? 7.1 ? 5.3 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d ? 5.7 ? 4.3 a pulsed drain current i dm ? 40 a continuous source current (diode conduction) a i s ? 1.7 ? 0.9 maximum power dissipation a t a = 25 c p d 2.0 1.1 w maximum power dissipation a t a = 70 c p d 1.3 0.7 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 50 62.5 maximum junction-to-ambient a steady state r thja 85 110 c/w maximum junction-to-foot (drain) steady state r thjf 30 40 c/w notes a. surface mounted on 1 ? x 1? fr4 board.
si4925bdy vishay siliconix www.vishay.com 2 document number: 72001 s-50366?rev. c, 28-feb-05 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 1 ? 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v ? 1 a zero gate voltage drain current i dss v ds = ? 30 v, v gs = 0 v, t j = 55 c ? 25 a on-state drain current a i d(on) v ds = ? 5 v, v gs = ? 10 v ? 40 a drain source on state resistance a r ds( ) v gs = ? 10 v, i d = ? 7.1 a 0.020 0.025 drain-source on-state resistance a r ds(on) v gs = ? 4.5 v, i d = ? 5.5 a 0.033 0.041 forward transconductance a g fs v ds = ? 10 v, i d = ? 7.1 a 20 s diode forward voltage a v sd i s = ? 1.7 a, v gs = 0 v ? 0.8 ? 1.2 v dynamic b total gate charge q g 33 50 gate-source charge q gs v ds = ? 15 v, v gs = ? 10 v, i d = ? 7.1 a 5.4 nc gate-drain charge q gd ds , gs , d 8.9 turn-on delay time t d(on) 9 15 rise time t r v dd = ? 15 v, r l = 15 12 20 turn-off delay time t d(off) v dd = ? 15 v , r l = 15 i d ? 1 a, v gen = ? 10 v, r g = 6 60 90 ns fall time t f 34 50 ns source-drain reverse recovery time t rr i f = ? 1.7 a, di/dt = 100 a/ s 30 60 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (25 c unless noted) 0 10 20 30 40 012345 0 10 20 30 40 012345 v gs = 10 thru 5 v t c = ? 55 c 125 c 4 v 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 3, 2 v
si4925bdy vishay siliconix document number: 72001 s-50366?rev. c, 28-feb-05 www.vishay.com 3 typical characteristics (25 c unless noted) r ds(on) ? on-resiistance (normalized) ? on-resistance ( r ds(on) ) 0 500 1000 1500 2000 2500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 0.00 0.02 0.04 0.06 0.08 0 10203040 v ds ? drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 7.1 a i d ? drain current (a) v gs = 10 v i d = 7.1 a v gs = 10 v gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.02 0.04 0.06 0.08 0246810 i d = 7.1 a 50 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 25 c t j = 150 c i d = 3 a
si4925bdy vishay siliconix www.vishay.com 4 document number: 72001 s-50366?rev. c, 28-feb-05 typical characteristics (25 c unless noted) v ds ? drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified 0 20 30 10 15 power (w) single pulse power time (sec) 25 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 ? 0.4 ? 0.2 0.0 0.2 0.4 0.6 0.8 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j ? temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 600 10 10 ? 1 10 ? 2 5 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse ? drain current (a) i d p(t) = 10 dc 0.1 i dm limited i d(on) limited *r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001
si4925bdy vishay siliconix document number: 72001 s-50366?rev. c, 28-feb-05 www.vishay.com 5 typical characteristics (25 c unless noted) 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?72001 .
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