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tl/h/9326 lm614 quad operational amplifier and adjustable reference february 1995 lm614 quad operational amplifier and adjustable reference general description the lm614 consists of four op-amps and a programmable voltage reference in a 16-pin package. the op-amp out-per- forms most single-supply op-amps by providing higher speed and bandwidth along with low supply current. this device was specifically designed to lower cost and board space requirements in transducer, test, measurement and data acquisition systems. combining a stable voltage reference with four wide output swing op-amps makes the lm614 ideal for single supply transducers, signal conditioning and bridge driving where large common-mode-signals are common. the voltage ref- erence consists of a reliable band-gap design that maintains low dynamic output impedance (1 x typical), excellent initial tolerance (0.6%), and the ability to be programmed from 1.2v to 6.3v via two external resistors. the voltage refer- ence is very stable even when driving large capacitive loads, as are commonly encountered in cmos data acquisi- tion systems. as a member of national's new super-block tm family, the lm614 is a space-saving monolithic alternative to a multi- chip solution, offering a high level of integration without sac- rificing performance. features op amp y low operating current 300 m a y wide supply voltage range 4v to 36v y wide common-mode range v b to (v a b 1.8v) y wide differential input voltage g 36v y available in plastic package rated for military tempera- ture range operation reference y adjustable output voltage 1.2v to 6.3v y tight initial tolerance available g 0.6% y wide operating current range 17 m ato20ma y tolerant of load capacitance applications y transducer bridge driver and signal processing y process and mass flow control systems y power supply voltage monitor y buffered voltage references for a/d's connection diagram tl/h/9326 1 ordering information tolerance & v os reference temperature range package drawing nsc military industrial commercial b 55 c s t a s a 125 c b 40 c s t a s a 85 c0 c s t a s a 70 c g 0.6% @ lm614amn lm614ain e 16-pin n16e 80 ppm/ c max molded dip v os s 3.5 mv max lm614amj/883 e e 16-pin j16a (note 13) ceramic dip g 2.0% @ lm614mn lm614bin lm614cn 16-pin n16e 150 ppm/ c max molded dip v os s 5.0 mv e lm614wm lm614cwm 16-pin wide m16b surface mount super-block tm is a trademark of national semiconductor corporation. c 1996 national semiconductor corporation rrd-b30m56/printed in u. s. a.
absolute maximum ratings if military/aerospace specified devices are required, please contact the national semiconductor sales office/distributors for availability and specifications. voltage on any pins except v r (referred to v b pin) (note 2) 36v (max) (note 3) b 0.3v (min) current through any input pin & v r pin g 20 ma differential input voltage military and industrial g 36v commercial g 32v storage temperature range b 65 c s t j s a 150 c maximum junction temperature 150 c thermal resistance, junction-to-ambient (note 4) n package 100 c wm package 150 c soldering information (soldering, 10 seconds) n package 260 c wm package 220 c esd tolerance (note 5) g 1kv operating temperature range lm614ai, lm614i, lm614bi b 40 c s t j s a 85 c lm614am, lm614m b 55 c s t j s a 125 c lm614c 0 c s t j s a 70 c electrical characteristics these specifications apply for v b e gnd e 0v, v a e 5v, v cm e v out e 2.5v, i r e 100 m a, feedback pin shorted to gnd, unless otherwise specified. limits in standard typeface are for t j e 25 c; limits in boldface type apply over the operating temperature range . symbol parameter conditions (note 6) typical lm614am lm614m units lm614ai lm614bi limits lm614i (note 7) lm614c limits (note 7) i s total supply r load e % , 450 940 1000 m a max current 4v s v a s 36v (32v for lm614c) 550 1000 1070 m a max v s supply voltage range 2.2 2.8 2.8 v min 2.9 3 3 v min 46 36 32 v max 43 36 32 v max operational amplifier v os1 v os over supply 4v s v a s 36v 1.5 3.5 5.0 mv max (4v s v a s 32v for lm614c) 2.0 6.0 7.0 mv max v os2 v os over v cm v cm e 0v through v cm e 1.0 3.5 5.0 mv max (v a b 1.8v), v a e 30v 1.5 6.0 7.0 mv max v os3 d t average v os drift (note 7) 15 m v/ c max i b input bias current 10 25 35 na max 11 30 40 na max i os input offset current 0.2 4 4 na max 0.3 5 5 na max i os1 d t average offset 4 pa/ c drift current r in input resistance differential 1800 m x common-mode 3800 m x c in input capacitance common-mode input 5.7 pf e n voltage noise f e 100 hz, input referred 74 nv/ 0 hz i n current noise f e 100 hz, input referred 58 fa/ 0 hz cmrr common-mode v a e 30v, 0v s v cm s (v a b 1.8v), 95 80 75 db min rejection ratio cmrr e 20 log ( d v cm / d v os ) 90 75 70 db min psrr power supply 4v s v a s 30v, v cm e v a /2, 110 80 75 db min rejection ratio psrr e 20 log ( d v a / d v os ) 100 75 70 db min a v open loop r l e 10 k x to gnd, v a e 30v, 500 100 94 v/mv voltage gain 5v s v out s 25v 50 40 40 min http://www.national.com 2
electrical characteristics (continued) these specifications apply for v b e gnd e 0v, v a e 5v, v cm e v out e 2.5v, i r e 100 m a, feedback pin shorted to gnd, unless otherwise specified. limits in standard typeface are for t j e 25 c; limits in boldface type apply over the operating temperature range . symbol parameter conditions (note 6) typical lm614am lm614m units lm614ai lm614bi limits lm614i (note 8) lm614c limits (note 8) sr slew rate v a e 30v (note 8) g 0.70 g 0.55 g 0.50 v/ m s g 0.65 g 0.45 g 0.45 gbw gain bandwidth c l e 50 pf 0.8 mhz 0.52 mhz v o1 output voltage r l e 10 k x to gnd v a b 1.4 v a b 1.7 v a b 1.8 v min swing high v a e 36v (32v for lm614c) v a b 1.6 v a b 1.9 v a b 1.9 v min v o2 output voltage r l e 10 k x to v a v b a 0.8 v b a 0.9 v b a 0.95 v max swing low v a e 36v (32v for lm614c) v b a 0.9 v b a 1.0 v b a 1.0 v max i out output source v out e 2.5v, v a in e 0v, 25 20 16 ma min v b in eb 0.3v 15 13 13 ma min i sink output sink v out e 1.6v, v a in e 0v, 17 14 13 ma min current v b in e 0.3v 988 ma min i short short circuit current v out e 0v, v a in e 3v, 30 50 50 ma max v b in e 2v, source 40 60 60 ma max v out e 5v, v a in e 2v, 30 60 70 ma max v b in e 3v, sink 32 80 90 ma max voltage reference v r voltage reference (note 9) 1.244 1.2365 1.2191 v min 1.2515 1.2689 v max ( g 0.6%) ( g 2.0%) d v r d t average temperature (note 10) 10 80 150 ppm/ c drift max d v r d t j hysteresis (note 11) 3.2 m v/ c d v r d i r v r change v r(100 m a) b v r(17 m a) 0.05 1 1 mv max with current 0.1 1.1 1.1 mv max v r(10 ma) b v r(100 m a) 1.5 5 5 mv max (note 12) 2.0 5.5 5.5 mv max r resistance d v r(10 x 0.1 ma) /9.9 ma 0.2 0.56 0.56 x max d v r(100 x 17 m a) /83 m a 0.6 13 13 x max d v r d v ro v r change v r(vro e vr) b v r(vro e 6.3v) 2.5 7 7 mv max with high v ro (5.06v between anode and 2.8 10 10 mv max feedback) d v r d v a v r change with v r(v ae 5v) b v r(v ae 36v) 0.1 1.2 1.2 mv max v a change (v a e 32v for lm614c) 0.1 1.3 1.3 mv max v r(v ae 5v) b v r(v ae 3v) 0.01 1 1 mv max 0.01 1.5 1.5 mv max i fb feedback bias v anode s v fb s 5.06v 22 35 50 na max current 29 40 55 na max e n voltage noise bw e 10 hz to 10 khz, 30 m v rms v ro e v r http://www.national.com 3
electrical characteristics (continued) note 1: absolute maximum ratings indicate limits beyond which damage to the component may occur. electrical specifications do not apply when operating the device beyond its rated operating conditions. note 2: input voltage above v a is allowed. note 3: more accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. when any pin is pulled a diode drop below v b , a parasitic npn transistor turns on. no latch-up will occur as long as the current through that pin remains below the maximum rating. operation is undefined and unpredictable when any parasitic diode or transistor is conducting. note 4: junction temperature may be calculated using t j e t a a p d i ja . the given thermal resistance is worst-case for packages in sockets in still air. for packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal i ja are 90 c/w for the n package, wm package. note 5: human body model, 100 pf discharged through a 1.5 k x resistor. note 6: typical values in standard typeface are for t j e 25 c; values in boldface type apply for the full operating temperature range. these values represent the most likely parametric norm. note 7: all limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face) . note 8: slew rate is measured with op amp in a voltage follower configuration. for rising slew rate, the input voltage is driven from 5v to 25v, and the output voltage transition is sampled at 10v and @ 20v. for falling slew rate, the input voltage is driven from 25v to 5v, and the output voltage transition is sampled at 20v and 10v. note 9: v r is the cathode-feedback voltage, nominally 1.244v. note 10: average reference drift is calculated from the measurement of the reference voltage at 25 c and at the temperature extremes. the drift, in ppm/ c, is 10 6 # d v r /(v r [ 25 c ] # d t j ), where d v r is the lowest value subtracted from the highest, v r [ 25 c ] is the value at 25 c, and d t j is the temperature range. this parameter is guaranteed by design and sample testing. note 11: hysteresis is the change in v r caused by a change in t j , after the reference has been ``dehysterized''. to dehysterize the reference; that is minimize the hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25 c: 25 c, 85 c, b 40 c, 70 c, 0 c, 25 c. note 12: low contact resistance is required for accurate measurement. note 13: a military retslm614amx electrical test specification is available on request. the lm614amj/883 can also be procured as a standard military drawing. simplified schematic diagrams op amp tl/h/9326 2 reference bias tl/h/9326 3 http://www.national.com 4
typical performance characteristics (reference) t j e 25 c, feedback pin shorted to v b e 0v, unless otherwise noted on 5 representative units vs temperature reference voltage reference voltage drift voltage drift vs time accelerated reference current and temperature reference voltage vs current and temperature reference voltage vs reference current reference voltage vs reference current reference voltage vs stability range reference ac voltage feedback-to-anode feedback current vs voltage feedback-to-anode feedback current vs vs frequency reference noise voltage resistance vs frequency reference small-signal tl/h/9326 4 http://www.national.com 5
typical performance characteristics (reference) (continued) t j e 25 c, feedback pin shorted to v b e 0v, unless otherwise noted reference power-up time feedback voltage step reference voltage with 100 e 12 m a current step reference voltage with current step for 100 m a e 10 ma reference step response with supply voltage step reference voltage change tl/h/9326 8 typical performance characteristics (op amps) v ae 5v, v be gnd e ov, v cm e v a /2, v out e v a /2, t j e 25 c, unless otherwise noted temperature voltage range vs input common-mode representative units temperature on 9 v os vs junction common-mode voltage input bias current vs and output sink current slew rate vs temperature step response large-signal vs temp. and current output voltage swing tl/h/9326 5 http://www.national.com 6
typical performance characteristics (op amps) (continued) v a e 5v, v b e gnd e 0v, v cm e v a /2, v out e v a /2, t j e 25 c, unless otherwise noted output voltage and temp. output source current vs output voltage and temp. output sink current vs large signal output swing, frequency and gain output impedance vs response vs temp. small-signal pulse response vs load small-signal pulse vs frequency op amp voltage noise vs frequency op amp current noise and temperature gain vs frequency small-signal voltage vs frequency and load small-signal voltage gain frequency response follower small-signal voltage rejection ratio common-mode input tl/h/9326 6 http://www.national.com 7
typical performance characteristics (op amps) (continued) v a e 5v, v b e gnd e 0v, v cm e v a /2, v out e v a /2, t j e 25 c, unless otherwise noted power supply current vs power supply voltage tl/h/9326 7 voltage rejection ratio positive power supply tl/h/9326 21 voltage rejection ratio negative power supply tl/h/9326 22 junction temperature input offset current vs tl/h/9326 24 junction temperature input bias current vs tl/h/9326 38 http://www.national.com 8
typical performance distributions military temperature range average v os drift tl/h/9326 29 industrial temperature range average v os drift tl/h/9326 30 commercial temperature range average v os drift tl/h/9326 31 military temperature range average i os drift tl/h/9326 32 industrial temperature range average i os drift tl/h/9326 33 commercial temperature range average i os drift tl/h/9326 34 http://www.national.com 9
typical performance distributions (continued) noise distribution voltage reference broad-band tl/h/9326 35 noise distribution op amp voltage tl/h/9326 36 noise distribution op amp current tl/h/9326 37 application information voltage reference reference biasing the voltage reference is of a shunt regulator topology that models as a simple zener diode. with current i r flowing in the `forward' direction there is the familiar diode transfer function. i r flowing in the reverse direction forces the refer- ence voltage to be developed from cathode to anode. the cathode may swing from a diode drop below v b to the ref- erence voltage or to the avalanche voltage of the parallel protection diode, nominally 7v. a 6.3v reference with v a e 3v is allowed. tl/h/9326 9 figure 1. voltages associated with reference (current source i r is external) the reference equivalent circuit reveals how v r is held at the constant 1.2v by feedback, and how the feedback pin passes little current. to generate the required reverse current, typically a resistor is connected from a supply voltage higher than the refer- ence voltage. varying that voltage, and so varying i r , has small effect with the equivalent series resistance of less than an ohm at the higher currents. alternatively, an active current source, such as the lm134 series, may generate i r . capacitors in parallel with the reference are allowed. see the reference ac stability range typical curve for capaci- tance valuesefrom 20 m a to 3 ma any capacitor value is stable. with the reference's wide stability range with resis- tive and capacitive loads, a wide range of rc filter values will perform noise filtering. tl/h/9326 10 figure 2. reference equivalent circuit tl/h/9326 11 figure 3. 1.2v reference adjustable reference the feedback pin allows the reference output voltage, v ro , to vary from 1.24v to 6.3v. the reference attempts to hold v r at 1.24v. if v r is above 1.24v, the reference will conduct current from cathode to anode; feedback cur- rent always remains low. if feedback is connected to an- ode, then v ro e v r e 1.24v. for higher voltages feed- back is held at a constant voltage above anodeesay 3.76v for v ro e 5v. connecting a resistor across the cons- taint v r generates a current i e r1/v r flowing from cathode into feedback node. a thevenin equivalent 3.76v is gen- erated from feedback to anode with r2 e 3.76/i. keep i http://www.national.com 10
application information (continued) greater than one thousand times larger than feedback bias current for k 0.1% errorei t 32 m a for the military grade over the military temperature range (i t 5.5 m a for a 1% untrimmed error for a commercial part.) tl/h/9326 12 figure 4. thevenin equivalent of reference with 5v output tl/h/9326 13 r1 e vr/i e 1.24/32 m e 39k r2 e r1 (vro/vr) b 1 e 39k (5/1.24) b 1) e 118k figure 5. resistors r1 and r2 program reference output voltage to be 5v understanding that v r is fixed and that voltage sources, re- sistors, and capacitors may be tied to the feedback pin, a range of v r temperature coefficients may be synthesized. tl/h/9326 14 figure 6. output voltage has negative temperature coefficient (tc) if r2 has negative tc tl/h/9326 15 figure 7. output voltage has positive tc if r1 has negative tc tl/h/9326 16 figure 8. diode in series with r1 causes voltage across r1 and r2 to be proportional to absolute temperature (ptat) connecting a resistor across cathode-to-feedback cre- atesa0tc current source, but a range of tcs may be synthesized. tl/h/9326 17 i e vr/r1 e 1.24/r1 figure 9. current source is programmed by r1 http://www.national.com 11
application information (continued) tl/h/9326 18 figure 10. proportional-to-absolute-temperature current source tl/h/9326 19 figure 11. negative-tc current source hysteresis the reference voltage depends, slightly, on the thermal his- tory of the die. competitive micro-power products varyeal- ways check the data sheet for any given device. do not assume that no specification means no hysteresis. operational amplifiers any amp or the reference may be biased in any way with no effect on the other amps or reference, except when a sub- strate diode conducts (see guaranteed electrical charac- teristics note 1). one amp input may be outside the com- mon-mode range, another amp may be operated as a com- parator, another with all terminals floating with no effect on the others (tying inverting input to output and non-inverting input to v b on unused amps is preferred). choosing operat- ing points that cause oscillation, such as driving too large a capacitive load, is best avoided. op amp output stage these op amps, like their lm124 series, have flexible and relatively wide-swing output stages. there are simple rules to optimize output swing, reduce cross-over distortion, and optimize capacitive drive capability: 1) output swing: unloaded, the 42 m a pull-down will bring the output within 300 mv of v b over the military tempera- ture range. if more than 42 m a is required, a resistor from output to v b will help. swing across any load may be improved slightly if the load can be tied to v a , at the cost of poorer sinking open-loop voltage gain 2) cross-over distortion: the lm614 has lower cross-over distortion (a 1 v be deadband versus 3 v be for the lm124), and increased slew rate as shown in the charac- teristic curves. a resistor pull-up or pull-down will force class-a operation with only the pnp or npn output tran- sistor conducting, eliminating cross-over distortion 3) capacitive drive: limited by the output pole caused by the output resistance driving capacitive loads, a pull- down resistor conducting 1 ma or more reduces the out- put stage npn r e until the output resistance is that of the current limit 25 x . 200 pf may then be driven without os- cillation. op amp input stage the lateral pnp input transistors, unlike most op amps, have bv ebo equal to the absolute maximum supply voltage. also, they have no diode clamps to the positive supply nor across the inputs. these features make the inputs look like high impedances to input sources producing large differen- tial and common-mode voltages. http://www.national.com 12
typical applications tl/h/9326 42 figure 12. simple low quiescent drain voltage regulator. total supply current approximately 320 m a, when v in ea 5v. v out e (r 1 /pe a 1) v ref tl/h/9326 44 r 1 ,r 2 should be 1% metal film p b should be low t.c. trim pot figure 14. slow rise time upon power-up, adjustable transducer bridge driver. rise time is approximately 1 ms. tl/h/9326 43 * 10k must be low t.c. trimpot. figure 13. ultra low noise 10.00v reference. total output noise is typically 14 m v rms . tl/h/9326 46 figure 16. low drop-out voltage regulator circuit, drop-out voltage is typically 0.2v. tl/h/9326 45 figure 15. transducer data acquisition system. set zero code voltage, then adjust 10 x gain adjust pot for full scale. http://www.national.com 13
physical dimensions inches (millimeters) unless otherwise noted ceramic dual-in-line package (j) order number lm614amj/883 ns package number j16a http://www.national.com 14
physical dimensions inches (millimeters) unless otherwise noted (continued) 16-lead molded small outline package (wm) order number lm614cwm or LM614IWM ns package number m16b http://www.national.com 15
lm614 quad operational amplifier and adjustable reference physical dimensions inches (millimeters) unless otherwise noted (continued) 16-lead molded dual-in-line package (n) order number lm614cn, lm614ain, lm614bin, lm614amn or lm614mn ns package number n16a life support policy national's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of national semiconductor corporation. as used herein: 1. life support devices or systems are devices or 2. a critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. national semiconductor national semiconductor national semiconductor national semiconductor corporation europe hong kong ltd. japan ltd. 1111 west bardin road fax: a 49 (0) 180-530 85 86 13th floor, straight block, tel: 81-043-299-2308 arlington, tx 76017 email: europe.support @ nsc.com ocean centre, 5 canton rd. fax: 81-043-299-2408 tel: 1(800) 272-9959 deutsch tel: a 49 (0) 180-530 85 85 tsimshatsui, kowloon fax: 1(800) 737-7018 english tel: a 49 (0) 180-532 78 32 hong kong fran 3 ais tel: a 49 (0) 180-532 93 58 tel: (852) 2737-1600 http://www.national.com italiano tel: a 49 (0) 180-534 16 80 fax: (852) 2736-9960 national does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and national reserves the right at any time without notice to change said circuitry and specifications.

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