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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors BU1706AX d escription with to-220f package high voltage high speed switching applications for use in high frequency electronic lighting ballast applications. pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1750 v v ceo collector-emitter voltage open base 850 v v ebo emitter-base voltage open collector 7.5 v i c collector current 5 a i cm collector current (peak) 8 a i b base current 3 a i bm base current (peak) 5 a p t total power dissipation t c =25 32 w t j junction temperature 150 t stg storage temperature -40~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BU1706AX c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0;l=25mh 750 v v cesat collector-emitter saturation voltage i c =1.5a; i b =0.3a 1.0 v v besat base-emitter saturation voltage i c =1.5a; i b =0.3a 1.3 v i ces collector cut-off current v ce =rated;v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =12v; i c =0 1.0 ma h fe-1 dc current gain i c =5ma ; v ce =10v 8 h fe-2 dc current gain i c =0.4a ; v ce =3v 12 18 35 h fe-3 dc current gain i c =1.5a ; v ce =1v 5 7 switching times t on turn-on time 1.1 1.5 s t s storage time 5.0 6.5 s t f fall time i c =1.5a ;i b1 =-i b2 =0.3a 0.75 1.0 s savantic semiconductor product specification 3 silicon npn power transistors BU1706AX package outline fig.2 outline dimensions |
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