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| 2008. 9. 11 1/2 semiconductor technical data smfb23 schottky barrier type diode revision no : 2 switching type power supply applications. features low profile surface mount package. low power loss, high efficiency. low forward voltage. application switching power supply. reversed battery connection protection. dc/dc converter. cellular phones. maximum rating (ta=25 ) + _ + _ + _ + _ + _ + _ smf dim millimeters a b c d e f g 2.6 0.05 3.5 0.1 0.9 0.05 1.6 0.05 0.65 0.05 + _ 0.11 0.05 0 ~ 0.1 a b c d e e f h g 0.98 0.05 h electrical characteristics (ta=25 ) marking b23 type name lot no. characteristic symbol rating unit maximum repetitive peak reverse voltage v rrm 30 v average output rectitifed current i o 2 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 33 a junction temperature t j -40 125 storage temperature range t stg -40 150 characteristic symbol test condition min. typ. max. unit peak forward voltage v fm i fm =2a - - 0.42 v repetitive peak reverse current i rrm v rrm =rated - - 1.0 ma thermal resistance r th(j-1) junction to lead - - 20 /w r th(j-a) junction to ambient (on a ceramic board) - - 70 r th(j-a) junction to ambient (on a grass-epoxy board) - - 135
2008. 9. 11 2/2 smfb23 revision no : 2 i - v ff f forward voltage v (v) f forward current i (a) number of cycles peak surge forward current i (a) 1 0 10 20 40 30 fsm 10 surge forward current (non - repetitive) 100 ta=25 c f=60hz p - i f(av) f(av) f(av) average forward current i (a) 0 0 0.1 0.2 0.3 0.4 0.5 0.7 0.6 f(av) average forward power dissipation p (w) 0.4 0.8 1.2 1.6 2.4 2.0 rectangular rectangular waveform conduction angle conduction angle 0 =60 360 =60 120 120 180 180 dc dc ta - i f(av) f(av) average forward current i (a) 0 0 20 40 100 80 60 120 140 maximum allowable temperature ta max ( c) 0.4 0.8 1.6 1.2 2.0 2.4 on a grass-epoxy board waveform 0 i f(av) v =15v r 360 0 0.1 0.2 0.4 0.3 0.5 0.6 0.8 0.7 10 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 t =125 c 25 c j |
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