aug-28-2001 1 BAR64-04S vps05604 6 3 1 5 4 2 silicon pin diode preliminary data high voltage current controlled rf resistor for rf attenuator and switches frequency range above 1mhz up to 3 ghz low resistance and long carrier life time very low capacitance at zero volts reverse bias at frequencies above 1 ghz very low signal distortion eha07464 6 54 3 2 1 c1/a2 c3 a4 a3/c4 c2 a1 d1 d4 d2 d3 type marking pin configuration package BAR64-04S pps for pin configuration see figure above sot363 maximum ratings parameter symbol value unit diode reverse voltage v r 150 v forward current i f 100 ma total power dissipation t s = tbd p tot tbd mw operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) r thjs tbd k/w 1 for calculation of r thja please refer to application note thermal resistance
aug-28-2001 2 BAR64-04S electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 150 - - v forward voltage i f = 50 ma v f - - 1.1 ac characteristics diode capacitance- v r = 20 v, f = 1 mhz c t - 0.23 0.35 pf forward resistance i f = 1 ma, f = 100 mhz i f = 10 ma, f = 100 mhz i f = 100 ma, f = 100 mhz r f - - - 12.5 2.1 0.85 20 3.8 1.35 charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 1.55 - s case capacitance f = 1 mhz c c - 0.09 - pf series inductance l s - 0.6 - nh
aug-28-2001 3 BAR64-04S diode capacitance c t = (v r ) f = 1mhz 0 2 4 6 8 10 12 14 16 v 20 v r 0 0.1 0.2 0.3 0.4 0.5 pf 0.7 c t 1 mhz 100 mhz 1 ghz forward resistance r f = ( i f ) f = 100mhz 10 -2 10 -1 10 0 10 1 10 2 10 3 ma i f -1 10 0 10 1 10 2 10 3 10 ohm r f forward current i f = ( v f ) t a = 25c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f intermodulation intercept point ip 3 = ( i f ); f = parameter 10 -1 10 0 10 1 ma i f 1 10 2 10 dbm ip 3 f =1800mhz f =900mhz
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