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km416c4000b, KM416C4100B cmos dram this is a family of 4,194,304 x 16 bit fast page mode cmos drams. fast page mode offers high speed random access of memory cells within the same row. refresh cycle(4k ref. or 8k ref.), access time (-45, -5 or -6) are optional features of this family. all of this fam- ily have cas -before- ras refresh, ras -only refresh and hidden refresh capabilities. this 4mx16 fast page mode dram family is fabri- cated using samsung s advanced cmos process to realize high band-width, low power consumption and high reliability. ? part identification - km416c4000b(5.0v, 8k ref.) - KM416C4100B(5.0v, 4k ref.) ? fast page mode operation ? 2 cas byte/word read/write operation ? cas -before- ras refresh capability ? ras -only and hidden refresh capability ? fast parallel test mode capability ? ttl(5.0v) compatible inputs and outputs ? early write or output enable controlled write ? jedec standard pinout ? available in plastic tsop(ii) package ? +5.0v 10% power supply samsung electronics co., ltd. reserves the right to change products and specifications without notice. 4m x 16bit cmos dynamic ram with fast page mode description features ? refresh cycles part no. refresh cycle refresh time normal km416c4000b* 8k 64ms KM416C4100B 4k ? performance range speed t rac t cac t rc t pc -45 45ns 12ns 80ns 31ns -5 50ns 13ns 90ns 35ns -6 60ns 15ns 110ns 40ns ? active power dissipation speed 8k 4k -45 550 715 -5 495 660 -6 440 605 unit : mw control clocks lower data out buffer ras ucas lcas w vcc vss dq0 to dq7 a0~a12 (a0~a11)*1 a0~a8 (a0~a9)*1 memory array 4,194,304 x 16 cells functional block diagram note) *1 : 4k refresh s e n s e a m p s & i / o upper data in buffer upper data out buffer lower data in buffer dq 8 to dq15 oe * access mode & ras only refresh mode : 8k cycle/64ms cas -before- ras & hidden refresh mode : 4k cycle/64ms row decoder column decoder vbb generator refresh timer refresh control refresh counter row address buffer col. address buffer
km416c4000b, KM416C4100B cmos dram pin configuration (top views) v cc dq0 dq1 dq2 dq3 v cc dq4 dq5 dq6 dq7 n.c v cc w ras n.c n.c n.c n.c a0 a1 a2 a3 a4 a5 v cc v ss dq15 dq14 dq13 dq12 v ss dq11 dq10 dq9 dq8 n.c v ss lcas ucas oe n.c n.c a12(n.c)* a11 a10 a9 a8 a7 a6 v ss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 pin name pin function a0 - a12 address inputs(8k product) a0 - a11 address inputs(4k product) dq0 - 15 data in/out v ss ground ras row address strobe ucas upper column address strobe lcas lower column address strobe w read/write input oe data output enable v cc power(+5.0v) n.c no connection (400mil tsop(ii)) *(n.c) : n.c for 4k refresh product ? km416c40(1)00bs
km416c4000b, KM416C4100B cmos dram absolute maximum ratings * permanent device damage may occur if "absolute maximum ratings" are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. exposure to absolute maximum rating conditions for ex tended periods may affect device reliability. parameter symbol rating units voltage on any pin relative to v ss v in, v out -1.0 to +7.0 v voltage on v cc supply relative to v ss v cc -1.0 to +7.0 v storage temperature tstg -55 to +150 c power dissipation p d 1 w short circuit output current i os address 50 ma recommended operating conditions (voltage referenced to vss, t a = 0 to 70 c) *1 : v cc +2.0v at pulse width 20ns which is measured at v cc *2 : -2.0 at pulse width 20ns which is measured at v ss parameter symbol min typ max units supply voltage v cc 4.5 5.0 5.5 v ground v ss 0 0 0 v input high voltage v ih 2.4 - v cc +1.0 *1 v input low voltage v il -1.0 - 0.8 v dc and operating characteristics (recommended operating conditions unless otherwise noted.) parameter symbol min max units input leakage current (any input 0 v in v cc +0.5v, all other pins not under test=0 volt) i i(l) -5 5 ua output leakage current (data out is disabled, 0v v out v cc ) i o(l) -5 5 ua output high voltage level(i oh =-5ma) v oh 2.4 - v output low voltage level(i ol =4.2ma) v ol - 0.4 v *2
km416c4000b, KM416C4100B cmos dram *note : i cc1 , i cc3 , i cc4 and i cc6 are dependent on output loading and cycle rates. specified values are obtained with the output open. i cc is specified as an average current. in i cc1 , i cc3 and i cc6, address can be changed maximum once while ras =v il . in i cc4 , address can be changed maximum once within one fast page mode cycle time, t pc . dc and operating characteristics (continued) i cc1 * : operating current ( ras and ucas , lcas , address cycling @ t rc =min.) i cc2 : standby current ( ras = ucas = lcas = w =v ih ) i cc3 * : ras -only refresh current ( ucas = lcas =v ih , ras , address cycling @ t rc =min.) i cc4 * : fast page mode current ( ras =v il , ucas or lcas , address cycling @ t pc =min.) i cc5 : standby current ( ras = ucas = lcas = w =v cc -0.2v) i cc6 * : cas -before- ras refresh current ( ras and ucas or lcas cycling @ t rc =min) symbol power speed max units km416c4000b KM416C4100B i cc1 don t care -45 -5 -6 100 90 80 130 120 110 ma ma ma i cc2 normal don t care 2 2 ma i cc3 don t care -45 -5 -6 100 90 80 130 120 110 ma ma ma i cc4 don t care -45 -5 -6 70 60 50 80 70 60 ma ma ma i cc5 normal don t care 1 1 ma i cc6 don t care -45 -5 -6 100 90 80 130 120 110 ma ma ma
km416c4000b, KM416C4100B cmos dram capacitance (t a =25 c, v cc =5.0v, f=1mhz) parameter symbol min max units input capacitance [a0 ~ a12] c in1 - 5 pf input capacitance [ ras , ucas , lcas , w , oe ] c in2 - 7 pf output capacitance [dq0 - dq15] c dq - 7 pf test condition : v cc =5.0v 10%, vih/vil=2.4/0.8v, voh/vol=2.4/0.4v parameter symbol -45 -5 -6 units note min max min max min max random read or write cycle time t rc 80 90 110 ns read-modify-write cycle time t rwc 115 133 153 ns access time from ras t rac 45 50 60 ns 3,4,10 access time from cas t cac 12 13 15 ns 3,4,5 access time from column address t aa 23 25 30 ns 3,10 cas to output in low-z t clz 0 0 0 ns 3 output buffer turn-off delay t off 0 13 0 13 0 13 ns 6 transition time (rise and fall) t t 1 50 1 50 1 50 ns 2 ras precharge time t rp 25 30 40 ns ras pulse width t ras 45 10k 50 10k 60 10k ns ras hold time t rsh 12 13 15 ns cas hold time t csh 45 50 60 ns cas pulse width t cas 12 10k 13 10k 15 10k ns ras to cas delay time t rcd 18 33 20 37 20 45 ns 4 ras to column address delay time t rad 13 22 15 25 15 30 ns 10 cas to ras precharge time t crp 5 5 5 ns row address set-up time t asr 0 0 0 ns row address hold time t rah 8 10 10 ns column address set-up time t asc 0 0 0 ns 13 column address hold time t cah 8 10 10 ns 13 column address to ras lead time t ral 23 25 30 ns read command set-up time t rcs 0 0 0 ns read command hold time referenced to cas t rch 0 0 0 ns 8 read command hold time referenced to ras t rrh 0 0 0 ns 8 write command hold time t wch 8 10 10 ns write command pulse width t wp 8 10 10 ns write command to ras lead time t rwl 13 15 15 ns write command to cas lead time t cwl 12 13 15 ns 16 data set-up time t ds 0 0 0 ns 9,19 data hold time t dh 10 10 10 ns 9,19 ac characteristics (0 c t a 70 c, see note 1,2)
km416c4000b, KM416C4100B cmos dram ac characteristics (continued) parameter symbol -45 -5 -6 units note min max min max min max refresh period (4k, normal) t ref 64 64 64 ms refresh period (8k, normal) t ref 64 64 64 ms write command set-up time t wcs 0 0 0 ns 7 cas to w delay time t cwd 32 36 38 ns 7,15 ras to w delay time t rwd 67 73 83 ns 7 column address to w delay time t awd 43 48 53 ns 7 cas precharge w delay time t cpwd 48 53 60 ns cas set-up time ( cas -before- ras refresh) t csr 5 5 5 ns 17 cas hold time ( cas -before- ras refresh) t chr 10 10 10 ns 18 ras to cas precharge time t rpc 5 5 5 ns access time from cas precharge t cpa 26 30 35 ns 3 fast page mode cycle time t pc 31 35 40 ns fast page mode read-modify-write cycle time t prwc 70 76 85 ns cas precharge time (fast page cycle) t cp 9 10 10 ns 14 ras pulse width (fast page cycle) t rasp 45 200k 50 200k 60 200k ns ras hold time from cas precharge t rhcp 28 30 35 ns oe access time t oea 12 13 15 ns oe to data delay t oed 12 13 13 ns output buffer turn off delay time from oe t oez 0 13 0 13 0 13 ns 6 oe command hold time t oeh 12 13 15 ns write command set-up time (test mode in) t wts 10 10 10 ns 11 write command hold time (test mode in) t wth 15 15 15 ns 11 w to ras precharge time ( c -b- r refresh) t wrp 10 10 10 ns w to ras hold time ( c -b- r refresh) t wrh 10 10 10 ns ras pulse width ( c -b- r self refresh) t rass 100 100 100 us 20,21,22 ras precharge time ( c -b- r self refresh) t rps 80 90 110 ns 20,21,22 cas hold time ( c -b- r self refresh) t chs -50 -50 -50 ns 20,21,22
km416c4000b, KM416C4100B cmos dram test mode cycle parameter symbol -45 -5 -6 units note min max min max min max random read or write cycle time t rc 85 95 115 ns read-modify-write cycle time t rwc 120 138 160 ns access time from ras t rac 50 55 65 ns 3,4,10,12 access time from cas t cac 17 18 20 ns 3,4,5,12 access time from column address t aa 28 30 35 ns 3,10,12 ras pulse width t ras 50 10k 55 10k 65 10k ns cas pulse width t cas 17 10k 18 10k 20 10k ns ras hold time t rsh 17 18 20 ns cas hold time t csh 50 55 65 ns column address to ras lead time t ral 28 30 35 ns cas to w delay time t cwd 37 41 43 ns 7 ras to w delay time t rwd 72 78 88 ns 7 column address to w delay time t awd 48 53 58 ns 7 fast page mode cycle time t pc 36 40 45 ns fast page mode read-modify-write cycle time t prwc 75 81 90 ns ras pulse width (fast page cycle) t rasp 50 200k 55 200k 65 200k ns access time from cas precharge t cpa 31 35 40 ns 3 oe access time t oea 17 18 20 ns oe to data delay t oed 17 18 18 ns oe command hold time t oeh 17 18 20 ns ( note 11 )
km416c4000b, KM416C4100B cmos dram km416c40(1)00b truth table ras lcas ucas w oe dq0 - dq7 dq8-dq15 state h x x x x hi-z hi-z standby l h h x x hi-z hi-z refresh l l h h l dq-out hi-z byte read l h l h l hi-z dq-out byte read l l l h l dq-out dq-out word read l l h l h dq-in - byte write l h l l h - dq-in byte write l l l l h dq-in dq-in word write l l l h h hi-z hi-z - notes an initial pause of 200 us is required after power-up followed by any 8 ras -only refresh or cas -before- ras refresh cycles before proper device operation is achieved. v ih (min) and v il (max) are reference levels for measuring timing of input signals. transition times are measured between v ih (min) and v il (max) and are assumed to be 5ns for all inputs. measured with a load equivalent to 2 ttl load and 100pf. operation within the t rcd (max) limit insures that t rac (max) can be met, t rcd (max) is specified as a reference point only. if t rcd is greater than the specified t rcd (max) limit, then access time is controlled exclusively by t cac . assumes that t rcd 3 t rcd (max). t off (min)and t oez (max) define the time at which the output achieves the open circuit condition and are not referenced v oh or v ol . t wcs , t rwd , t cwd and t awd are non restrictive operating parameters. they are included in the data sheet as electrical char- acteristics only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. if t cwd 3 t cwd (min), t rwd 3 t rwd (min) and t awd 3 t awd (min), then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. if neither of the above conditions is satisfied, the condition of the data out is indeterminate. either t rch or t rrh must be satisfied for a read cycle. these parameters are referenced to cas falling edge in early write cycles and to w falling edge in read-modify-write cycles. operation within the t rad (max) limit insures that t rac (max) can be met. t rad (max) is specified as a reference point only. if t rad is greater than the specified t rad (max) limit, then access time is controlled by t aa . these specifications are applied in the test mode. in test mode read cycle, the value of t rac , t aa , t cac is delayed by 2ns to 5ns for the specified values. these parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. 5. 6. 7. 8. 9. 10. 11. 12. 1. 2. 3. 4.
km416c4000b, KM416C4100B cmos dram t asc , t cah are referenced to the earlier cas falling edge. t cp is specified from the later cas rising edge in the previous cycle to the earlier cas falling edge in the next cycle. t cwd is referenced to the later cas falling edge at word read-modify-write cycle. t cwl is specified from w falling edge to the earlier cas rising edge. t csr is referenced to the earlier cas falling edge before ras transition low. t chr is referenced to the later cas rising edge after ras transition low. t ds is specified for the earlier cas falling edge and t dh is specified by the later cas falling edge. if t rass 3 100us, then ras precharge time must use t rps instead of t rp . for ras -only refresh and burst cas -before- ras refresh mode, 4096(4k/8k) cycles of burst refresh must be executed within 64ms before and after self refresh, in order to meet refresh specification. for distributed cas -before- ras with 15.6us interval cas -before- ras refresh should be executed with in 15.6us immediately before and after self refresh in order to meet refresh specification. t csr t chr ras lcas ucas t ds t dh lcas ucas dq0 ~ dq15 din 21. 20. 19. 15. 14. 13. 18. 17. 16. 22.
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq0 ~ dq7 column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t asr t rah t asc t cah t crp t aa t oea t cac t clz t rac open t off t rch don t care undefined lcas v ih - v il - t crp t csh t rsh t rcd t cas t rad t crp t rrh v oh - v ol - dq8 ~ dq15 t cac t clz t rac open data-out data-out t off t oez t oez t rcs word read cycle
km416c4000b, KM416C4100B cmos dram t crp note : d in = open lower byte read cycle ras v ih - v il - lcas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq0 ~ dq7 column address row address t ras t rc t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp t aa t oea t cac t clz t rac open data-out t oez t off t rch don t care undefined t rpc ucas v ih - v il - open v oh - v ol - dq8 ~ dq15 t rcs t rrh
km416c4000b, KM416C4100B cmos dram note : d in = open upper byte read cycle ras v ih - v il - lcas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v oh - v ol - dq0 ~ dq7 column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp t aa t oea t cac t clz t rac open data-out t oez t off t rrh t rch don t care undefined ucas v ih - v il - open v oh - v ol - dq8 ~ dq15 t crp t rpc t rcs
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp don t care word write cycle ( early write ) note : d out = open undefined lcas v ih - v il - t wcs v ih - v il - dq0 ~ dq7 t ds v ih - v il - dq8 ~ dq15 t crp t csh t rsh t rcd t cas t crp t wch t wp t dh data-in t ds t dh data-in
km416c4000b, KM416C4100B cmos dram t crp ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row address t ras t rc t rp t ral t rad t asr t rah t asc t cah don t care lower byte write cycle ( early write ) note : d out = open undefined lcas v ih - v il - t wcs v ih - v il - dq0 ~ dq7 t ds v ih - v il - dq8 ~ dq15 t crp t csh t rsh t rcd t cas t wch t wp t dh data-in t crp t rpc
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp don t care upper byte write cycle ( early write ) note : d out = open undefined lcas v ih - v il - t wcs v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t wch t wp t ds t dh data-in t crp t rpc
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t crp don t care word write cycle ( oe controlled write ) note : d out = open undefined lcas v ih - v il - v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t crp t rsh t rcd t cas t crp t rwl t wp t cwl t dh t dh data-in column address t oeh t oed t ds t ds data-in t csh t cah
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row address t ras t rc t rp t ral t rad t asr t rah t asc t cah don t care lower byte write cycle ( oe controlled write ) note : d out = open undefined lcas v ih - v il - t rwl v ih - v il - dq0 ~ dq7 t ds v ih - v il - dq8 ~ dq15 t crp t csh t rsh t rcd t cas t crp t wp t cwl t dh data-in t crp t rpc t oeh t oed
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row address t ras t rc t crp t rp t csh t rsh t rcd t cas t ral t rad t asr t rah t asc t cah t crp don t care upper byte write cycle ( oe controlled write ) note : d out = open undefined lcas v ih - v il - v ih - v il - v ih - v il - t crp t rwl t wp t cwl t ds t dh data-in t oeh t oed dq0 ~ dq7 dq8 ~ dq15 t rpc
km416c4000b, KM416C4100B cmos dram t rwl ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t ras t rwc t rp t rsh t rcd t cas t csh t rad t asr t rah t asc t cah t crp don t care word read - modify - write cycle undefined lcas v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 v i/oh - v i/ol - dq8 ~ dq15 t wp t cwl t ds t dh t rsh t rcd t cas t crp t awd t cwd t oea t rwd t oed t oez t rac t aa t oez t rac t aa t ds t oed t dh valid data-out valid data-in valid data-out valid data-in t cac t clz t cac t clz
km416c4000b, KM416C4100B cmos dram t rwl ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t ras t rwc t rp t csh t rad t asr t rah t asc t cah t crp don t care lower-byte read - modify - write cycle undefined lcas v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 v i/oh - v i/ol - dq8 ~ dq15 t wp t cwl t ds t dh t rsh t rcd t cas t crp t awd t cwd t oea t rwd t oed t oez t rac t aa valid data-out valid data-in t rpc t cac t clz open
km416c4000b, KM416C4100B cmos dram t crp t rwl ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t ras t rwc t rp t rsh t rcd t cas t csh t rad t asr t rah t asc t cah t crp don t care upper-byte read - modify - write cycle undefined lcas v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 v i/oh - v i/ol - dq8 ~ dq15 t wp t cwl t awd t cwd t oea t rwd t oez t rac t aa t ds t oed t dh valid data-out valid data-in t rpc t cac t clz open
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t rcd t asr t crp don t care fast page mode word read cycle undefined lcas v ih - v il - v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 t oez t off column address t cas t cas t cas t cas t cp t cp t cp t rpc t pc t pc t pc t rhcp t csh t rcd t crp t cas t cas t cas t cas t cp t cp t rpc t rad t rah t asc t cah t cah t cah t asc t cah t rcs t rcs t oea t aa t rcs t rch t rch t rcs t rch t rch t rrh t asc column address column addr valid data-out t oez t off t oea t cpa t aa t cac t oea t cpa t aa t cac t oea t cpa t aa t cac valid data-out valid data-out valid data-out t oez t off t oez t off t oez t off valid data-out t oez t off valid data-out valid data-out valid data-out t oez t off t oez t off t clz t rac t cac t cac t clz t rac ? t asc t cp t ral
km416c4000b, KM416C4100B cmos dram t crp t crp ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t rcd t asr don t care fast page mode lower byte read cycle undefined lcas v ih - v il - v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 t oez t off column address t cas t cas t cas t cas t cp t cp t rpc t pc t pc t pc t rhcp t csh t rad t rah t asc t cah t asc t cah t cah t asc t cah t rcs t rcs t oea t aa t rcs t rch t rch t rcs t rch t rch t rrh t asc column address column addr valid data-out t oez t off t oea t cpa t aa t cac t oea t cpa t aa t cac t oea t cpa t aa t cac valid data-out valid data-out valid data-out t oez t off t oez t off t clz t rac t cac ? t rpc open t ral t cp
km416c4000b, KM416C4100B cmos dram t cp ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t rcd t asr t crp don t care fast page mode upper byte read cycle undefined lcas v ih - v il - v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 column address t cas t cas t cas t cas t cp t cp t rpc t pc t pc t pc t rhcp t csh t crp t rpc t rad t rah t asc t cah t asc t cah t cah t cah t rcs t rcs t oea t aa t rcs t rch t rch t rcs t rch t rch t rrh t asc column address column addr t oea t cpa t oea t cpa t oea t cpa t oez t off valid data-out t oez t off valid data-out valid data-out valid data-out t oez t off t oez t off t cac t clz t rac open ? t aa t cac t aa t cac t aa t cac t ral t asc
km416c4000b, KM416C4100B cmos dram t asc ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t rcd t asr t crp don t care fast page mode word write cycle ( early write ) undefined lcas v ih - v il - v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t crp t pc t pc t rhcp t rad t rah t cah t cah t cah t asc valid data-in t ds ? column address column address t cas t cp t cas t cp t cas t rsh ? t rcd t crp t pc t pc t cas t cp t cas t cp t cas t rsh ? t csh t asc ? ? t wp t wcs t wch t wp t wcs t wch t wp t wcs t wch ? ? ? valid data-in valid data-in ? ? t dh t ds t dh t ds t dh valid data-in valid data-in valid data-in ? ? t dh t dh t dh t ds t ds t ds note : d out = open t ral
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr t rasp t rp t asr t crp don t care fast page mode lower byte write cycle ( early write ) undefined lcas v ih - v il - v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t rpc t rhcp t rad t rah t cah t cah t asc t cah t asc valid data-in t ds ? column address column address t rcd t crp t pc t pc t cas t cp t cas t cp t cas t rsh ? t csh t asc ? ? t wp t wcs t wch t wp t wcs t wch t wp t wcs t wch ? ? ? valid data-in valid data-in ? ? t dh t ds t dh t ds t dh note : d out = open ? t ral
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - column address row addr. t rasp t rp t asr t crp don t care fast page mode upper byte write cycle ( early write ) undefined lcas v ih - v il - v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t rpc t rhcp t rad t rah t cah t cah t asc t cah t asc valid data-in t ds ? column address column address t rcd t crp t pc t pc t cas t cp t cas t cp t cas t rsh ? t csh t asc ? ? t wp t wcs t wch t wp t wcs t wch t wp t wcs t wch ? ? ? valid data-in valid data-in ? ? t dh t ds t dh t ds t dh note : d out = open ? ? t ral
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 row addr t csh t rasp t rp t asr don t care fast page mode word read-modify-write cycle undefined t rcd t cp t rad t cah t wp t dh col. addr col. addr t cas t cas t crp t asc t cah t ral t rcs t cwl t cwd t awd t rwd t cwd t awd t cwl t aa t rac t oea t clz t cac t oez t cpwd t oed t asc t clz t oea t cac t aa t dh t oed t rwl lcas v ih - v il - t rcd t cp t cas t cas t crp t crp t crp v i/oh - v i/ol - dq8 ~ dq15 valid data-out t dh t aa t rac t clz t cac valid data-in valid data-out valid data-in t clz t cac t aa t dh t oez t oed t ds t ds t ds t oez t oez valid data-out valid data-in valid data-out valid data-in t ds t prwc t rsh t wp t rcs t rah t oed
km416c4000b, KM416C4100B cmos dram ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 row addr t csh t rasp t rp t asr don t care fast page mode lower byte read - modify - write cycle undefined t rad t cah t wp t dh col. addr col. addr t asc t cah t ral t rcs t cwl t cwd t awd t rwd t wp t cwd t awd t cwl t aa t rac t oea t clz t cac t oez t cpwd t oed t asc t clz t oea t cac t aa t dh t oed t rwl lcas v ih - v il - t rcd t cp t cas t cas t crp t crp t crp v i/oh - v i/ol - dq8 ~ dq15 t ds t oez valid data-out valid data-in valid data-out valid data-in t ds t rpc t rsh t prwc open t rcs t rah
km416c4000b, KM416C4100B cmos dram ras v ih - v il - v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - v i/oh - v i/ol - dq0 ~ dq7 row addr t csh t rasp t rp t asr don t care fast page mode upper byte read - modify - write cycle undefined t rad t cah t wp t dh col. addr col. addr t asc t cah t ral t rcs t cwl t cwd t awd t rwd t wp t cwd t awd t cwl t aa t rac t oea t clz t cac t oez t cpwd t oed t asc t clz t oea t cac t aa t dh t oed t rwl v ih - v il - t rcd t cp t cas t cas t crp t crp t crp v i/oh - v i/ol - dq8 ~ dq15 t ds t oez valid data-out valid data-in valid data-out valid data-in t ds t rpc t rsh t prwc open ucas lcas t rcs t rah
km416c4000b, KM416C4100B cmos dram t csr open ras v ih - v il - ucas v ih - v il - a v ih - v il - row addr t rc t rp t asr t crp ras - only refresh cycle lcas v ih - v il - t ras t rah note : w , oe , d in = don t care d out = open t rpc t crp cas - before - ras refresh cycle note : oe , a = don t care ras v ih - v il - ucas v ih - v il - t rc t rp lcas v ih - v il - t ras t rpc t cp t crp t chr t cp t csr t chr t off open v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 t wrp t wrh w v ih - v il - don t care t rp undefined
km416c4000b, KM416C4100B cmos dram t oez data-in data-out t rp ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - row address t ras t rc t chr t rcd t rsh t rad t asr t rah t asc t crp don t care hidden refresh cycle ( read ) undefined lcas v ih - v il - v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 t rsh t rcd t crp t wrh column address t oea t ras t rc t chr t cah t rcs t aa t rac t clz t cac data-out t off open open t rp t ral
km416c4000b, KM416C4100B cmos dram t wcs t rp ras v ih - v il - ucas v ih - v il - a v ih - v il - w v ih - v il - oe v ih - v il - row address t ras t rc t chr t rcd t rsh t rad t asr t rah t asc t crp don t care hidden refresh cycle ( write ) undefined lcas v ih - v il - v ih - v il - dq0 ~ dq7 v ih - v il - dq8 ~ dq15 t rsh t rcd t crp t wrh column address t ras t rc t chr t cah t wrp t ds note : d out = open t wp t wch data-in t dh t ds data-in t dh t rp t ral
km416c4000b, KM416C4100B cmos dram t csr open cas - before - ras self refresh cycle note : oe , a = don t care ras v ih - v il - ucas v ih - v il - t rps lcas v ih - v il - t rass t rpc t cp t rpc t csr t off open v oh - v ol - dq0 ~ dq7 v oh - v ol - dq8 ~ dq15 t wrp t wrh w v ih - v il - t chs t cp t chs test mode in cycle note : oe , a = don t care ras v ih - v il - ucas v ih - v il - t rp lcas v ih - v il - t rc t rpc t cp t crp t csr open v oh - v ol - dq0 ~ dq15 t chr t cp t csr t chr t rp t ras t rp don t care undefined t wts t wth w v ih - v il - t off
km416c4000b, KM416C4100B cmos dram 50 tsop(ii) 400mil units : inches (millimeters) max 0.047 (1.20) min 0.002 (0.05) 0.018 (0.45) 0.010 (0.25) 0.0315 (0.80) 0.034 (0.875) 0.821 (20.85) 0.829 (21.05) 0.841 (21.35) max 0.010 (0.25) 0.004 (0.10) 0 . 4 0 0 ( 1 0 . 1 6 ) 0 . 4 7 1 ( 1 1 . 9 6 ) 0 . 4 5 5 ( 1 1 . 5 6 ) 0~8 0.030 (0.75) 0.018 (0.45) typ 0.010 (0.25) o plastic thin small out-line package type(ii)

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