amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com gaas hemt mmic medium power amplifier, 71 - 76 ghz v06.0511 general description features functional diagram gain: 24 db p 1db: +17.5 dbm s upply voltage: +4v 50 o hm m atched i nput/ o utput die s ize: 2.65 x 1.60 x 0.05 mm typical applications this hm c-au h 318 is ideal for: ? short haul / high capacity links ? wireless lan bridges ? military & space ? e-band communication systems the hm c-au h 318 is a high dynamic range, three stage gaas hem t mmi c m edium p ower amplifer which operates between 71 and 76 g h z. the hm c- au h 318 provides 24 db of gain, and an output power of +17.5 dbm at 1 db compression from a +4v supply voltage. all bond pads and the die backside are ti/au metallized and the amplifer device is fully passivated for reliable operation. the hm c-au h 318 gaas hem t mmi c m edium p ower amplifer is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 o hm environment and contacted with rf probes. hmc-auh318 electrical specifcations [1] , t a = +25 c, vdd1 = vdd2 = 4v, idd1 = idd2 = 80 ma [2] p arameter m in. typ. m ax. units f requency r ange 71 - 76 g h z gain 21 24 db i nput r eturn l oss 7 db o utput r eturn l oss 4 db o utput power for 1 db compression ( p 1db) 17.5 dbm s aturated o utput p ower ( p sat) 20 dbm s upply current ( i dd1+ i dd2) 160 ma [1] unless otherwise indicated, all measurements are from probed die. [2] adjust vgg1, vgg2 independently between -0.8v to +0.3v (typically -0.1v) to achieve drain currents of i dd1 = 80 ma and i dd2 = 80 ma. p roducts and product information are subject to change without notice.
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-auh318 v06.0511 gaas hemt mmic medium power amplifier, 71 - 76 ghz fixtured output power vs. frequency output return loss vs. frequency linear gain vs. frequency input return loss vs. frequency -25 -20 -15 -10 -5 0 68 70 72 74 76 78 80 return loss (db) frequency (ghz) -14 -12 -10 -8 -6 -4 -2 0 68 70 72 74 76 78 80 return loss (db) frequency (ghz) 16 17 18 19 20 21 70 71 72 73 74 75 p1db psat pout (dbm) frequency (ghz) 18 19 20 21 22 23 24 25 26 68 70 72 74 76 78 80 gain (db) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-auh318 v06.0511 gaas hemt mmic medium power amplifier, 71 - 76 ghz outline drawing absolute maximum ratings reliability information ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions no t es : 1. a ll d imensions a re in in c hes [ mm ]. 2. back si d e me ta lli zat ion : g ol d. 3. back si d e me ta l is g ro u n d. 4. b on d p ad me ta lli zat ion : g ol d. 5. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 6. o v er a ll d ie si z e .002 7. d ie t hi ck ness is 0.002 [0.050 mm] 8 ty pi ca l b on d p ad is 0.004 [0.100 mm] s qua re u nless not e d n ominal 4.0v s upply to g n d 0.0v to +4.5v gate bias voltage -0.8v to +0.3v rf i nput p ower (vdd = +4.0v) +3 dbm s torage temperature -65 to +150 c max peak refow temperature 260 c junction temperature to m aintain 1 m illion h our m tt f 180 c n ominal junction temperature (t = 85 c) 156.5 c thermal r esistance (junction to die bottom) 111.7 c/ w o perating temperature -55 to +85 c drain bias current ( i dd1) 100 ma drain bias current ( i dd2) 100 ma die packaging information [1] s tandard alternate gp-1 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms. 2, 3 vgg1, vgg2 gate control for amplifer. p lease follow mmi c amplifer biasing p rocedure application note. s ee assembly for required external components. 4 rfo ut this pad is ac coupled and matched to 50 o hms. 5, 6 vdd1, vdd2 p ower s upply voltage for the amplifer. s ee assembly for required external components. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions hmc-auh318 v06.0511 gaas hemt mmic medium power amplifier, 71 - 76 ghz application circuit
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com n ote 1: bypass caps should be 100 p f (approximately) single-layer placed no farther than 30 mils from the amplifer. n ote 2: best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output. assembly diagram hmc-auh318 v06.0511 gaas hemt mmic medium power amplifier, 71 - 76 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 ohm microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076 mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.05mm (0.002?) thic k gaas mmic ribbon bond rf gr ound plane 0.1 27mm (0.005?) thic k alumina thin f ilm substrat e 0.07 6mm (0.003?) f igur e 1. hmc-auh318 v06.0511 gaas hemt mmic medium power amplifier, 71 - 76 ghz
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