6 C20 ghz amplifier technical data features ? high efficiency: 11% @ p -1db typical ? output power, p -1db : 18 dbm typical ? high gain: 14 db typical ? flat gain response: 0.5 db typical ? low input/output vswr: <1.7:1 typical ? single supply bias: 5 volts (@ 115 ma typical) with optional gate bias description the HMMC-5618 6C20 ghz mmic is an efficient two-stage amplifier that is designed to be used as a cascadable intermediate gain block for ew applications. in communication systems, it can be used as an amplifier for a local oscillator, or as a transmit amplifier. it is fabricated using a phemt integrated circuit struc- ture that provides exceptional efficiency and flat gain perfor- mance. during typical operation, with a single 5-volt dc power supply, each gain stage is biased for class-a operation for optimal power output with minimal distortion. the rf input and rf output has matching circuitry for use in 50 ohm environments. absolute maximum ratings [1] symbol parameters/conditions units min. max. v d1 , v d2 drain supply voltage v 5.5 v g1 optional gate supply voltage v -5 +1 v g2 optional gate supply voltage v -10 +1 i d1 drain supply current ma 70 i d2 drain supply current ma 84 p in rf input power [2] dbm 20 t ch channel temp. [3] c +160 t a backside ambient temp. c -55 +100 t stg storage temperature c -65 +150 t max maximum assembly temp. c +300 notes: 1. absolute maximum ratings for continuous operation unless otherwise noted. 2. operating at this power level for extended (continuous) periods is not recommended. 3. refer to dc specifications/physical properties table for derating information. HMMC-5618 chip size: 920 x 920 m m (36.2 x 36.2 mils) chip size tolerance: 10 m m ( 0.4 mils) chip thickness: 127 15 m m (5.0 0.6 mils) pad dimensions: 80 x 80 m m (3.2 x 3.2 mils) the backside of the chip is both rf and dc ground. this helps simplify the assembly process and reduces assembly related performance variations and costs. the mmic is a cost effective alternative to hybrid (discrete- fet) amplifiers that require complex tuning and assembly processes.
2 HMMC-5618 dc specifications/physical properties [1] symbol parameters and test conditions units min. typ. max. v d1 , v d2 drain supply voltage v 3.0 5.0 5.5 i d1 stage-one drain supply current ma 50 (v d1 = 5 v , v g1 = open or ground) i d2 stage-two drain supply current ma 65 (v d2 = 5 v , v g2 = open or ground) i d1 + i d2 total drain supply current ma 115 140 (v d1 = v d2 = 5 v, v g1 = v g2 = open or ground) v p1 optional input-stage gate supply pinch-off voltage v -4 -2.8 (v d1 = 5 v , i d1 < 3 ma: input stage off [2] ) i g1 gate supply current (input stage off [2] ) ma 0.9 v p2 optional input-stage gate supply pinch-off voltage v -7.5 -5.3 (v d2 = 5 v , i d2 < 3.6 ma: output stage off [2] ) i g2 gate supply current (output stage off [2] ) ma 1.7 (v d2 = 5 v , v g2 = open or ground) q ch-bs thermal resistance [3] c/watt 87 (channel-to-backside at t ch = 150 c) t ch channel temperature [4] (t a = 100 c, mttf = 10 6 hrs, c 150 v d1 = v d2 = 5 v, v g1 = v g2 = open) notes: 1. backside ambient operating temperature t a = 25 c unless otherwise noted. 2. the specified fet stage is in the off state when biased with a gate voltage level that is sufficient to pinch off the drain current. 3. thermal resistance (in c/watt) at a channel temperature t ( c) can be estimated using his equation: q (t) @ 87 x [t( c)+ 273] / [150 c + 273]. 4. derate mttf by a factor of two for every 8 c above t ch . HMMC-5618 rf specifications, t a = 25 c, v d1 = v d2 = 5 v, v g1 = v g2 = open or ground, z o = 50 w 6C18 ghz 5.9C20 ghz symbol parameters and test conditions units typ. min. max. min. max. gain small signal gain db 14 12 11.5 d gain gain flatness db 0.5 d s 21 / d t temperature coefficient of gain db/ c -0.025 (rl in ) min minimum input return loss db 12 10 9 (rl out ) min minimum output return loss db 12 10 10 isolation reverse isolation db 40 p -1db output power @ 1 db gain compression dbm 18 17 17 p sat saturated output power (p in = 10 dbm) dbm 20 18.5 18.5 nf noise figure db 5.5 7 7
3 HMMC-5618 applications the HMMC-5618 is a gaas mmic amplifier designed for optimum class-a efficiency and flat gain performance from 6 ghz to 20 ghz. it has applications as a cascadable gain stage for ew amplifiers, buffer stages, lo drives, phased-array radar, and transmitter amplifiers used in commercial communication systems. the mmic solution is a cost effective alternative to hybrid assemblies. biasing and operation the mmic amplifier is normally biased with a single positive drain supply connected to both v d1 and v d2 bond pads as shown in figure 8a. the recommended drain supply voltage is 3 to 5 volts. if desired, the first stage drain bonding pad can be biased separately to provide a small amount of gain slope control or bandwidth extension as demon- strated in figure 2. no ground wires are required because all ground connections are made with plated through- holes to the backside of the device. gate bias pads (v g1 and v g2 ) are also provided to allow adjust- ments in gain, rf output power, and dc power dissipation, if necessary. no connection to the gate pads is needed for single drain-bias operation. however, for custom applications, the dc current flowing through the input and/or output gain stage may be adjusted by applying a voltage to the gate bias pad(s) as shown in figure 8b. a negative gate-pad voltage will decrease the drain current. the gate-pad voltage is approximately zero volts during operation with no dc gate supply. refer to the absolute maximum ratings table for allowed dc and thermal conditions. assembly techniques solder die attach using a fluxless gold-tin (ausn) solder preform is the recommended assembly method. a conductive epoxy such as ablebond ? 71-1lm1 or ablebond ? 36-2 may also be used for die attaching provided the maximum thermal ratings are not exceeded. the device should be attached to an electri- cally conductive surface to complete the dc and rf ground paths. the backside metallization on the device is gold. it is recommended that the rf input, rf output, and dc supply connections be made using 0.7 mil diameter gold wire. the device has been designed so that optimum performance is realized when the rf input and rf output bond-wire inductance is approxi- mately 0.2 nh as demonstrated in figures 4, 6, and 7. therefore, mesh or multiple-wire bonds are not necessary. it is, however, recommended that the rf wires be as short as possible to mini- mize assembly related perfor- mance variations. thermosonic wedge is the preferred method for wire bonding to the gold bond pads. wires can be attached using a guided-wedge at an ultrasonic power level of roughly 64 db for a duration of 76 8 msec with a stage temperature of 150 2 c. for more detailed information see hp application note #999 gaas mmic assembly and handling guidelines. gaas mmics are esd sensitive. proper precautions should be used when handling these devices. figure 1. HMMC-5618 simplified schematic. in v g1 v g2 2k 2k 2k 1k out matching matching feedback network matching v d1 v d2
4 HMMC-5618 typical scattering parameters [1] , (t a = 25 c, v d1 = v d2 = 5.0 v, v g1 = v g2 = open, z o = 50 w freq. s 11 s 12 s 21 s 22 ghz db mag ang db mag ang db mag ang db mag ang 2.0 -4.8 0.574 -140.8 -71.2 0.000 -73.5 -43.0 0.0070 117.3 -0.9 0.901 -75.4 2.5 -5.6 0.526 -166.9 -74.4 0.000 -12.0 -25.3 0.0544 -113.7 -1.6 0.835 -99.7 3.0 -6.0 0.501 166.4 -73.6 0.000 -41.3 -8.0 0.3981 -124.1 -3.3 0.687 -127.0 3.5 -6.2 0.492 136.2 -55.9 0.002 -51.8 2.9 1.4008 -159.1 -6.1 0.498 -156.7 4.0 -6.7 0.461 99.3 -49.4 0.003 -94.9 10.4 3.3208 154.4 -10.3 0.305 171.1 4.5 -8.8 0.363 60.6 -45.5 0.005 -140.6 14.2 5.1331 104.5 -16.7 0.147 133.8 5.0 -11.9 0.255 30.7 -43.8 0.006 -179.4 15.4 5.9052 62.9 -23.2 0.069 76.1 5.5 -14.4 0.190 10.9 -43.8 0.006 152.8 15.6 6.0539 31.6 -22.0 0.079 21.3 6.0 -15.8 0.163 -3.8 -43.4 0.007 132.6 15.6 6.0319 6.8 -18.9 0.114 -5.5 6.5 -16.4 0.152 -16.2 -43.4 0.007 116.8 15.6 6.0062 -14.1 -16.8 0.144 -19.6 7.0 -16.3 0.153 -27.4 -43.1 0.007 101.8 15.5 5.9669 -32.7 -15.4 0.171 -30.5 7.5 -16.0 0.159 -38.0 -43.0 0.007 87.6 15.5 5.9318 -49.7 -14.3 0.193 -39.4 8.0 -15.4 0.171 -48.2 -42.8 0.007 79.1 15.4 5.8635 -65.4 -13.5 0.212 -47.1 8.5 -14.9 0.180 -58.5 -42.7 0.007 68.9 15.4 5.8567 -80.0 -12.9 0.227 -54.4 9.0 -14.5 0.189 -67.5 -42.5 0.008 58.9 15.3 5.8232 -94.2 -12.5 0.237 -61.4 9.5 -14.1 0.198 -75.8 -42.3 0.008 50.2 15.2 5.7757 -107.8 -12.2 0.246 -67.8 10.0 -13.7 0.206 -83.6 -42.0 0.008 41.0 15.2 5.7385 -121.0 -12.0 0.252 -73.9 10.5 -13.4 0.214 -91.2 -42.0 0.008 33.7 15.1 5.7043 -133.8 -11.9 0.254 -79.6 11.0 -13.2 0.219 -98.3 -42.0 0.008 27.5 15.1 5.6618 -146.2 -11.9 0.253 -85.2 11.5 -13.0 0.223 -105.1 -41.7 0.008 19.8 15.0 5.6180 -158.4 -12.0 0.250 -90.0 12.0 -13.0 0.224 -111.4 -41.3 0.009 13.9 14.9 5.5801 -170.4 -12.2 0.245 -94.3 12.5 -13.0 0.224 -117.5 -40.9 0.009 6.2 14.9 5.5525 177.7 -12.5 0.238 -98.2 13.0 -13.1 0.221 -123.2 -40.8 0.009 1.0 14.9 5.5276 166.0 -12.8 0.230 -101.6 13.5 -13.3 0.217 -128.7 -40.5 0.009 -6.7 14.8 5.5138 154.2 -13.1 0.221 -104.3 14.0 -13.5 0.210 -134.1 -40.2 0.010 -12.5 14.8 5.5069 142.3 -13.5 0.211 -106.2 14.5 -13.9 0.201 -138.9 -40.0 0.010 -17.5 14.8 5.4997 130.5 -13.9 0.201 -107.1 15.0 -14.5 0.188 -143.4 -39.2 0.011 -25.3 14.8 5.5050 118.6 -14.4 0.191 -106.8 15.5 -15.2 0.174 -147.2 -39.1 0.011 -31.8 14.8 5.5089 106.3 -14.7 0.184 -105.4 16.0 -16.2 0.155 -150.0 -38.6 0.012 -38.9 14.8 5.5103 93.8 -14.9 0.180 -103.4 16.5 -17.5 0.133 -150.7 -38.4 0.012 -45.8 14.8 5.5013 80.9 -14.9 0.180 -100.3 17.0 -19.2 0.110 -147.8 -37.8 0.013 -52.1 14.8 5.4892 67.9 -14.6 0.186 -97.4 17.5 -21.1 0.088 -138.0 -37.3 0.014 -60.7 14.7 5.4475 54.4 -14.3 0.194 -95.6 18.0 -22.1 0.079 -117.7 -36.7 0.015 -69.6 14.7 5.4016 40.5 -13.7 0.206 -95.1 18.5 -20.7 0.092 -96.6 -35.9 0.016 -74.8 14.5 5.3231 26.1 -13.3 0.217 -96.0 19.0 -18.2 0.123 -83.9 -35.4 0.017 -85.0 14.3 5.2168 11.2 -13.0 0.224 -98.0 19.5 -15.4 0.169 -80.3 -35.0 0.018 -95.7 14.0 5.0371 -4.3 -12.9 0.226 -99.4 20.0 -13.0 0.224 -81.8 -34.8 0.018 -105.6 13.7 4.8240 -19.9 -13.0 0.225 -100.9 20.5 -11.1 0.278 -85.7 -34.7 0.018 -114.9 13.2 4.5580 -36.4 -13.3 0.217 -99.8 21.0 -9.6 0.332 -91.2 -34.2 0.020 -126.3 12.5 4.2135 -52.5 -13.8 0.205 -97.5 21.5 -8.3 0.384 -97.7 -34.3 0.019 -137.2 11.7 3.8489 -68.9 -14.0 0.199 -90.2 22.0 -7.3 0.432 -284.7 -34.2 0.020 -328.3 10.8 3.4671 -85.5 -13.4 0.214 -80.1 note: 1. data obtained from on-wafer measurements.
5 HMMC-5618 typical performance figure 2. gain and isolation vs. frequency. [1] 20 15 10 5 0 0 10 20 30 40 50 small-signal gain (db) reverse isolation (db) 2 6 10 14 18 22 frequency (ghz) v d2 = 5.0 v, v g1 = v g2 = open gain isolation spec range 5.9 ?20 ghz v d1 = 3.0 v v d1 = 5.0 v figure 3. input and output return loss vs. frequency. [1] 0 5 10 15 20 25 0 5 10 15 20 25 input return loss (db) output return loss (db) 2 6 10 14 18 22 frequency (ghz) v d1 = v d2 = 5.0 v, v g1 = v g2 = open output input spec range 5.9 ?20 ghz figure 4. effects of input/output bond wire inductance on gain and isolation. [2] 20 15 10 5 0 0 10 20 30 40 50 small-signal gain (db) reverse isolation (db) 2 6 10 14 18 22 frequency (ghz) v d1 = v d2 = 5.0 v, v g1 = v g2 = open gain isolation spec range 5.9 ?20 ghz figure 5. noise figure vs. frequency. [1] 10 8 6 4 2 0 noise figure (db) 4 8 12 16 20 frequency (ghz) v d1 = v d2 = 5.0 v, v g1 = v g2 = open spec range 5.9 ?20 ghz wafer-probed measurements figure 6. effects of input/ output bond wire inductance on input return loss. [2] 0 5 10 15 20 25 input return loss (db) 2 6 10 14 18 22 frequency (ghz) v d1 = v d2 = 5.0 v, v g1 = v g2 = open spec range 5.9 ?20 ghz includes 0.2 nh wire inductance wafer-probed measurements figure 7. effects of input/output bond wire inductance on output return loss. [2] 0 5 10 15 20 25 output return loss (db) 2 6 10 14 18 22 frequency (ghz) v d1 = v d2 = 5.0 v, v g1 = v g2 = open spec range 5.9 ?20 ghz includes 0.2 nh wire inductance wafer-probed measurements notes: 1. wafer-probed measurements. 2. effect of 0.2 nh inductance in the rf input and rf output bond wires is modeled from measured wafer-probe tests calibrated at the pads of the mmic device. includes 0.2 nh wire inductance
this data sheet contains a variety of typical and guaranteed performance data. the information supplied should not be interpreted as a complete list of circuit specifica- tions. in this data sheet the term typical refers to the 50th percentile performance. for additional information contact your local hp sales representative. figure 8. HMMC-5618 assembly diagrams. figure 9. HMMC-5618 bonding pad positions. (dimensions are in micrometers.) figure 8a. assembly for single drain-bias operation. figure 8b. assembly with gate bias connections. gold plated shim (optional) chip capacitor ( 3 68 pf) rf in rf out to v dd power supply to v g2 power supply to v g1 power supply bonding island or small chip-capacitor gold plated shim (optional) chip capacitor ( 3 68 pf) rf in rf out to v dd power supply 0 0 920 530 0 0 530 143 573 355 79 593 920 v d2 out v d1 in v g1 v g2 www.hp.com/go/rf for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1999 hewlett-packard co. obsoletes 5965-5443e 5968-4544e (2/99)
|
