MMFTN3018W MMFTN3018W n silicon n-channel mos field effect transistor silizium n-kanal mos feldeffekt-transistor n version 2011-01-28 dimensions - ma?e [mm] 1 = g 2 = s 3 = d power dissipation C verlustleistung 200 mw plastic case kunststoffgeh?use sot-323 weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) MMFTN3018W drain-source-voltage C drain-source-spannung g short v dss 60 v gate-source-voltage continuos C gate-source-spannung v gss 20 v power dissipation C verlustleistung p tot 200 mw 1 ) drain current continuos C drainstrom (dc) i d 100 ma peak drain current C drain-spitzenstrom i dm 400 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s 150c -55+150c 1 device mounted on standard pcb material bauteil montiert auf standard-leiterplattenmaterial ? diotec semiconductor ag http://www.diotec.com/ 1 1.3 0.3 1 . 2 5 0 . 1 1 0.1 2 0.1 2 . 1 0 . 1 type code 3 2 1
MMFTN3018W characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. drain-source breakdown voltage C drain-source-durchbruchspannung i d = 10 a v (br)dss 30 v drain-source leakage current C drain-source leckstrom g short v ds = 30 v i dss 1 a gate-source leakage current C gate-source leckstrom v gs = 20 v i gss 1 a gate-source threshold voltage C gate-source schwellspannung v ds = 3 v , i d = 100 a v gs(th) 0.8 v 1.5 v drain-source on-state resistance C drain-source einschaltwiderstand v gs = 4 v , i d = 10 ma v gs = 2.5 v, i d = 1 ma r ds(on) r ds(on) 8 13 forward transfer admittance C bertragungssteilheit v ds = 3 v , i d = 10 ma g fs 20 ms input capacitance C eingangskapazit?t v ds = 5 v, f = 1 mhz c iss 13 pf output capacitance C ausgangskapazit?t v ds = 5 v, f = 1 mhz c oss 9 pf reverse transfer capacitance C rckwirkungskapazit?t v ds = 5 v, f = 1 mhz c rss 4 pf thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 625 k/w 1 ) 1 device mounted on standard pcb material bauteil montiert auf standard-leiterplattenmaterial 2 http://www.diotec.com/ ? diotec semiconductor ag
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