features trenchfet power mosfet new low thermal resistance package applications automotive - boardnet 42-vep and abs - motor drives high current dc/dc converters SUM110N08-10 vishay siliconix document number: 71838 s-21863?rev. b, 21-oct-02 www.vishay.com 1 n-channel 75-v (d-s) mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 75 0.010 @ v gs = 10 v 110 d g s n-channel mosfet to-263 s d g top view SUM110N08-10 absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 75 gate-source voltage v gs 20 v t c = 25 c 110 continuous drain current (t j = 175 c) t c = 125 c i d 63 a pulsed drain current i dm 350 a avalanche current i ar 75 repetitive avalanche energy a l = 0.1 mh e ar 280 mj t c = 25 c 200 b maximum power dissipation a t a = 25 c c p d 3.7 w operating junction and storage temperature range t j , t stg -55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 junction-to-case r thjc 0.75 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM110N08-10 vishay siliconix www.vishay.com 2 document number: 71838 s-21863 ? rev. b, 21-oct-02 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 75 gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a dss v ds = 60 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.0055 0.010 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.0185 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.0245 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss 5250 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 700 pf reverse transfer capacitance c rss 310 total gate charge c q g 90 165 gate-source charge c q gs v ds = 35 v, v gs = 10 v, i d = 110 a 24 nc gate-drain charge c q gd ds gs d 27 turn-on delay time c t d(on) 20 30 rise time c t r v dd = 35 v, r l = 0.4 100 150 turn-off delay time c t d(off) v dd = 35 v, r l = 0.4 i d 110 a, v gen = 10 v, r g = 2.5 45 70 ns fall time c t f 75 115 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 110 pulsed current i sm 350 a forward voltage a v sd i f = 110 a, v gs = 0 v 1.0 1.5 v reverse recovery time t rr 75 120 ns peak reverse recovery current i rm(rec) i f = 85 a, di/dt = 100 a/ s 3.5 7 a reverse recovery charge q rr f 0.13 0.30 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM110N08-10 vishay siliconix document number: 71838 s-21863 ? rev. b, 21-oct-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1530456075 0 4 8 12 16 20 0 30 60 90 120 150 180 0 40 80 120 160 200 0 153045607590 0.000 0.002 0.004 0.006 0.008 0.010 0 20 40 60 80 100 120 0 40 80 120 160 200 0123456 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds - drain-to-source voltage (v) v gs - gate-to-source voltage (v) - drain current (a) i d - gate-to-source voltage (v) q g - total gate charge (nc) i d - drain current (a) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - transconductance (s) g fs 25 c -55 c t c = 125 c v ds = 35 v i d = 85 a v gs = 10 thru 6 v v gs = 10 v c iss c oss t c = -55 c 25 c 125 c - on-resistance ( r ds(on) ) - drain current (a) i d i d - drain current (a) c rss 5 v
SUM110N08-10 vishay siliconix www.vishay.com 4 document number: 71838 s-21863 ? rev. b, 21-oct-02 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j - junction temperature ( c) v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) - on-resistance ( r ds(on) ) 0 70 76 82 88 94 100 -50 -25 0 25 50 75 100 125 150 175 t j - junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 250 a 100 1 0.0001 i av (a) @ t a = 25 c
SUM110N08-10 vishay siliconix document number: 71838 s-21863 ? rev. b, 21-oct-02 www.vishay.com 5 thermal ratings 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 safe operating area v ds - drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum avalanche and drain current vs. case t emperature t c - ambient temperature ( c) - drain current (a) i d normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 normalized effective transient thermal impedance 10 0.2 0.1 duty cycle = 0.5 - drain current (a) i d 1 ms 10 ms 100 ms dc 100, 10 s single pulse 0.05 0.02 1
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