1 power transistors 2SD1323 silicon npn triple diffusion planar type darlington for midium speed power switching n features l incorporating a zener diode of 30v zener voltage between col- lector and base l minimized variation in the breakdown voltage l large energy handling capability l high-speed switching l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 30 5 30 5 5 8 4 40 2 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time energy handling capability symbol i cbo i ebo v ceo h fe1 h fe2 *1 v ce(sat) v be(sat) f t t on t stg t f e s/b *2 conditions v cb = 25v, i e = 0 v eb = 5v, i c = 0 i c = 5ma, i b = 0 v ce = 3v, i c = 0.5a v ce = 3v, i c = 3a i c = 3a, i b = 12ma i c = 5a, i b = 20ma i c = 3a, i b = 12ma v ce = 10v, i c = 0.5a, f = 1mhz i c = 3a, i b1 = 12ma, i b2 = C12ma, v cc = 20v i c = 2a, l = 100mh, r be = 100 w min 25 1000 2000 200 typ 20 0.3 3 1 max 100 2 35 10000 2.5 4 2.5 unit m a ma v v v mhz m s m s m s mj *1 h fe2 rank classification rank q p h fe2 2000 to 5000 4000 to 10000 t c =25 c ta=25 c *2 e s/b test circuit x l 1 w y g 6v 120 w r be 60hz mercury relay unit: mm internal connection 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1 b e c
2 power transistors 2SD1323 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c i c l coil area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 05 4 13 2 0 6 5 4 3 2 1 t c =25?c i b =2.0ma 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma 0.2ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =250 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =250 25?c 100?c t c =?5?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 10 10 2 10 3 10 4 10 5 v ce =3v 25?c ?5?c t c =100?c collector current i c ( a ) forward current transfer ratio h fe 1 10 100 1000 3 30 300 0.1 0.3 1 3 10 30 100 300 1000 r be =100 t c =25?c 200mj load inductance l coil ( mh ) collector current i c ( a ) 1 10 100 1000 3 30 300 0.1 0.3 1 3 10 30 100 300 1000 non repetitive pulse t c =25?c i cp i c t=10ms dc 1ms collector to emitter voltage v ce ( v ) collector current i c ( a )
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