absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 16 i d @ v gs = 12v, t c = 100c continuous drain current 10 i dm pulsed drain current 64 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 60 mj i ar avalanche current 16 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 6.2 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g o c a www.irf.com 1 technology for footnotes refer to the last page pre-irradiation radiation hardened IRHNJ67230 power mosfet 200v, n-channel surface-mount (smd-0.5) features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight smd-0.5 international rectifier?s r6 tm technology provides superior power mosfets for space applications. these devices have improved immunity to single event effect (see) and have been characterized for useful performance with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching applications such as dc-dc converters and motor controllers. these devices retain all of the well established advantages of mosfets such as voltage control, ease of paralleling and temperature stability of electrical parameters. product summary part number radiation level r ds(on) i d IRHNJ67230 100k rads (si) 0.13 ? 16a irhnj63230 300k rads (si) 0.13 ? 16a pd-96923b
IRHNJ67230 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 16 i sm pulse source current (body diode) ?? 64 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 16a, v gs = 0v t rr reverse recovery time ? ? 346 ns t j = 25c, i f = 16a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.22 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.13 ? v gs = 12v, i d = 10a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 10 ? ? s ( ) v ds = 15v, i ds = 10a i dss zero gate voltage drain current ? ? 10 v ds = 160v ,v gs =0v ??25 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 42 v gs = 12v, i d = 16a q gs gate-to-source charge ? ? 15 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 15 t d (on) turn-on delay time ? ? 18 v dd = 100v, i d = 16a, t r rise time ? ? 32 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 41 t f fall time ? ? 10 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1450 ? v gs = 0v, v ds = 25v c oss output capacitance ? 210 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 3.8 ? na ? nh ns a measured from the center of drain pad to center of source pad r g internal gate resistance ? 0.9 ? ? f = 1.0mhz, open drain thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 c/w note: corresponding spice and saber models are available on international rectifier web site.
www.irf.com 3 pre-irradiation IRHNJ67230 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics part numbers IRHNJ67230 and irhnj63230 international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 300k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 200 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds =160v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.134 ? v gs = 12v, i d = 10a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 16a resistance (smd-0.5) ? 0.130 ? v gs = 12v, i d = 10a 0 40 80 120 160 200 240 -20 -15 -10 -5 0 vgs vds xe - l e t= 4 3 xe - l e t= 5 9 au - let=90 table 2. single event effect safe operating area ion let energy range (mev/(mg/cm 2 )) (mev) (m) @vgs= 0v @vgs= -5v @vgs= -10v @vgs= -15v xe 43 2441 205 200 200 200 190 xe 59 825 66 200 200 200 190 au 90 1480 80 170 170 -- -- vds (v)
IRHNJ67230 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 16a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top 15v 12v 10v 9.0v 8.0v 7.0v 6.0v bottom 5.0v 5.0v 5 6 7 8 9 10111213 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 6 0 s pulse width t j = 150c t j = 25c
www.irf.com 5 pre-irradiation IRHNJ67230 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1020304050 q g, total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 16a for test circuit see figure 13 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 2800 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
IRHNJ67230 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v gs 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 i d , d r a i n c u r r e n t ( a ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHNJ67230 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.2a 10a bottom 16a
IRHNJ67230 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 0.47 mh peak i l = 16a, v gs = 12v i sd 16a, di/dt 570a/ s, v dd 200v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2006 case outline and dimensions ? smd-0.5 1 = drain 2 = gate 3 = source pad assignments
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