View JANHCA2N5339_3015366.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

mil - prf - 19500/560e 6 march 2002 superseding mil - prf - 19500/560d 3 january 2001 performance specification s emiconductor device, transistor, npn, silicon, switching type 2n5339 and 2n5339u3 jan, jantx, jantxv, jans, janhc and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . t his specification covers the performance requirements for npn silicon switching transistors. four levels of product assurance are provided for each encapsulated device type as specified in mil - prf - 19500 and two levels of product assurance are provided for each unencapsulated device type as specified in mil - prf - 19500. 1.2 physical dimensions . see figure 1 (to - 39), figures 2, 3, and 4 for janhc and jankc (die) and figure 5 for u3 devices (to - 276aa) dimensions. 1.3 maximum ratings . types p t (1) t a = +25 c p t (2) t c = +25 c v cbo v ceo v ebo i c i b t op and t stg r q jc w w v dc v dc v dc a dc a dc c c/w 2n5339 2n5339u3 1.0 1.0 100 100 100 100 100 6.0 6.0 5.0 5.0 1.0 1.0 - 65 to +200 - 65 to +200 17.5 12.5 (1) derate linearly at 5.71 mw/ c above t a > +25 c. (2) derate linearly from 80 mw/ c to 571 mw c. 1.4 primary electrical characteristics t a = +25 c . (unless otherwise indicated, applies to all devices.) limits h fe1 (1) v ce = 2.0 v dc; i c = 0.5 a dc h fe2 (1) v ce = 2.0 v dc; i c = 2.0 a dc h fe3 (1) v ce = 2.0 v dc; i c = 5.0 a dc min max 60 60 2 40 40 (1) pulsed (see 4.5.1). amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 6 june 2002. inch - pound beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense supply center, columbus, attn: dscc - vac, p.o. box 3990 , columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil - prf - 19500/560e 2 1.4 primary electrical characteristics t a = +25 c . (unless otherwise indicated, applies to all devices.) - continued. switching limits |h fe | f = 10 mhz v ce = 10 v dc i c = 0.5 a dc c obo v ce = 10 v dc i e = 0 100 khz f 1 mhz see figure 4 t on see figure 5 t off v ce(sat)1 i c = 2.0 a dc i b = 0.2 a dc (1) v be(sat)1 i c = 2.0 a dc i b = 0.2 a dc (1) pf m s m s v dc v dc min 3.0 max 15.0 250 0.2 2.2 0.7 1.2 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet a ll specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in t he solicitation (see 6.2). specification department of defense mil - prf - 19500 - semiconductor devices, general specification for. standard department of defense mil - std - 750 - test methods for semiconductor devices. (unless otherwise indicated , copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm - dodssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event o f a conflict between the text of this document and the references cited herein, the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil - prf - 19500/560e 3 figure 1. physical dimensions (to - 39) .
mil - prf - 19500/560e 4 dimensions notes symbol inches millimeters min max min max cd 0.305 0.355 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 lc 0.200 tp 5.08 tp 6 ld 0.016 0.0 21 0.41 0.53 7 ll 0.500 0.750 12.70 19.05 7 lu 0.016 0.019 0.41 0.48 7 l1 0.050 1.27 7 l2 0.250 6.35 7 tl 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.71 0.86 10 p 0.100 2.54 5 q 0.050 1.27 4 r 0.010 0.25 11 a 45 tp 45 tp 6 notes 1, 2, 8, 9 1, 2, 8, 9 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol c d shall not vary more than 0.010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) - 0.000 inch (0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (tp) relative to tab. device may be measured by direct methods or by gauge. 7. symbol ld applies between l1 and l2. dimension ld applies between l2 and ll minimum. 8. lead designation, depending on device type, shall be as follows: lead numb er to - 39 1 2 3 emitter base collector 9. lead number three is electrically connected to case. 10. beyond r maximum, tw shall be held for a minimum length of 0.011 inch (0.28 mm). 11. symbol r applied to both inside corners of tab. figure 1 . physical dimensions (to - 39) - continued.
mil - prf - 19500/560e 5 letter dimensions inches millimeters min max min max a 0.120 0.124 3.05 3.15 c 0.120 0.124 3.05 3.15 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: thickness: 0.008 inch (0.20 mm) to 0.012 inch (0.30 mm). top metal: aluminum 40,000 ? minimum, 50,000 ? nominal. back metal: gold 2,500 ? minimum, 3,000 ? nominal. back side: collector. bonding pad: b = 0.015 inch (0.38 mm) x 0.072 inch (1.83 mm). e = 0.015 inch (0.38 mm) x 0.060 inch (1.52 mm). 4. unless otherwise specified, tolerance is 0.005 inch (0.13 mm). figure 2. physical dimensions janhca and jankca .
mil - prf - 19500/560e 6 letter dimensions inches millimeters min max min max a 0.098 0.102 2.49 2.59 c 0.098 0.102 2.4 9 2.59 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: thickness: 0.006 inch (0.15 mm) to 0.010 inch (0.25 mm). top metal: aluminum 25,000 ? m inimum, 37,500 ? nominal. back metal: gold 1,500 ? minimum, 6,500 ? nominal. back side: collector. 4. unless otherwise specified, tolerance is 0.005 inch (0.13 mm). figure 3. physical dimensions janhcb and jankcb .
mil - prf - 19500/560e 7 1. chip size 0.120 x 0.120 inches 2 inches 2. chip thickness 0.010 0.0015inches nominal 3. top metal aluminum 30,000 ? minimum, 33,000 ? nominal 4. b ack metal a. al/ti/ni/ag12k ? /3k ? /7k ? /7k ? minimum15k ? /5k ? /10k ? /10k ? nominal. b. gold 2,500 ? minimum, 3000 ? nominal 5. backside collector 6. bonding pad b = 0.052 x 0.012 inches, e = 0.084 x 0.012 inches figure 4. physical dimensions janhcc an d jankcc .
mil - prf - 19500/560e 8 dimensions symbol inches millimeters min max min max a 0.111 0.122 2.82 3.10 b 0.291 0.301 7.39 7.65 c 0.395 0.405 10.03 10.29 d 0.281 0.291 7.14 7.39 e 0.220 0.230 5.59 5.84 f 0.115 0.125 2.92 3.18 g 0.09 0.100 2.29 2.54 h 0.1 45 0.155 3.68 3.94 i 0.073 typ. - 1.85 typ. - j 0.083 typ. - 2.11 typ. - k 0.005 typ. - 0.13 typ. l 0.015 typ. - 0.38 typ. - notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. schematic figure 5 . physical dimensions and configuration (u3) (smd 5) (to - 276aa) . 2 1 3 bottom view
mil - prf - 19500/560e 9 3. requirements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - prf - 19500. 3.2 qualification . devices furnished und er this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, a nd definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . the interface and physical dimensions shall be as specified in mil - prf - 19500 and on figure 1 (to - 39), figures 2, 3, and 4 (janhc and jankc) and figure 5 for u3 (to ? 276aa) devices herein. 3.4.1 lead finish . unless otherwise specified, lead finish shall be solderable in accordance with in mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 marking . devices shall be marked in accordance with mil - prf - 19500. at the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.7 electrical test requirements . the electrical test requirement s shall be the subgroups specified in table i, group a herein. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appeara nce. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualificatio n inspection . qualification inspection shall be in accordance with mil - prf - 19500 and herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil - prf - 19500.
mil - prf - 19500/560e 10 4.3 screening (jan, jantx, jantx v and jans levels only) . screening shall be in accordance with table iv of mil - prf - 19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see measurements mil - prf - 19500) jans level jantx and jantxv levels * 3c thermal impedance method 3131 of mil - std - 750. thermal impedance method 3131 of mil - std - 750. 9 i cbo1 and h fe2 not applicable 11 i cbo1 ; h fe2 , d i cbo 1 = 100 percent of initial value or 1.0 m a dc, whichever is greater; d h fe2 = 15 percent i cbo1 and h fe2 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; d i cbo1 = 100 percent of initial value or 1.0 m a dc, whichever is greater; d h fe2 = 15 percent subgroup 2 of table i herein; d i cbo1 = 100 percent of initial value or 1.0 m a dc, whichever is greater; d h fe2 = 15 percent. 4.3.1 power burn - in conditions . power burn - in conditions are as follows: t a = room ambient as defined in the general requirements of 4.5 of mil - std - 750. power shall be applied to the device to achieve t j = minimum 175 c and minimum power dissipation of p d = 75 percent p t max as defined in 1.3. * 4.3.2 screening for janhc and jankc . screening for janhc and jankc die shall be in accordance with mil - prf - 19500 discrete semiconductor die/chip lot acceptance. burn - in duration for jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspect ion shall be in accordance with mil - prf - 19500 and as specified herein. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with table v of mil - prf - 19500 and table i herein. electrical measurements (end - points) requirements sh all be in accordance with group a, subgroup 2 herein.
mil - prf - 19500/560e 11 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via of mil - prf - 19500 (jans) and 4.4.2.1 herein. electrica l measurements (end - points) shall be in accordance with group a, subgroup 2 herein. see 4.4.2.2 herein and table vib of mil - prf - 19500 for jan, jantx, and jantxv group b testing. electrical measurements (end - points) requirements shall be in accordance wit h group a, subgroup 2 herein. * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500 . subgroup method conditions b4 1037 v cb 3 10 v dc. b5 1027 (note: if a failure occurs, resubmission shall be at the test conditions of the origin al sample.) v cb = 10 v dc; p d 3 100 percent of rated p t (see 1.3). option 1: 96 hours minimum sample size in accordance with mil - prf - 19500, table via, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjust adjust t a or p d to achieve t j = +225 c minimum. b5 2037 test conditio n a. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembl y lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition * 1 1027 steady - state life: test condition b, 340 hours, v cb = 10 - 30 v dc, power shall be applied to the device to achieve t j = +175 c minimum, and minimum power dissipation of 75 percent of max rated p t (see 1.3 herein); n = 45, c = 0. 2 1027 the steady - state life test of step 1 sha ll be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high - temperat ure life (non - operating), t a = +200 c, t = 340 hours, n = 22, c = 0. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil - prf - 19500, and herein. electrical measurements (end - points) shall be in accordance with group a, subgroup 2 herein.
mil - prf - 19500/560e 12 * 4.4.3.1 group c inspection, table vii of mil - prf - 19500 . subgroup method condition c2 2036 test condition e . c5 3131 see 4.5.3. c6 1037 for solder die attach: v cb 3 10 v dc, t a = room ambient as defined in the general requirements of mil - std - 750. 6,000 cycles. * c6 1027 for eutectic die attach: v cb 3 10 v dc, adjust p t to achieve t j = + 175 c min. * 4.4.4 group e inspection, group e inspection shall be con ducted in accordance with the conditions specified for subgroup testing in table ix of mil - prf - 19500, and herein. electrical measurements (end - points) shall be in accordance with group a, subgroup 2 herein. group e inspection shall be performed for quali fication or re - qualification only. in case qualification was awarded to a prior revision of the spec sheet that did not request the performance of table ii tests, the tests specified in table ii herein must be performed to maintain qualification. 4.5 method of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil - std - 750. 4.5.2 input capacitance . this test shall be conducted in accordance with method 3240 of mil - std - 750, except the output capacitor shall be omitted. 4.5.3 thermal resistance (to be performed for qualification inspection only) . the thermal resistance measurements shall be conducted i n accordance with method 3131 of mil - std - 750. the following details shall apply: a. collector current magnitude during power application shall be 0.15 a dc. b. collector to emitter voltage magnitude shall be 20 v dc. c. reference temperature measuri ng point shall be the case. d. reference point temperature shall be + 25 c t r +35 c and recorded before the test is started. e. mounting arrangement shall be with heat sink to case. f. maximum limit shall be r q jc = 17.5 c/w for to - 39 devices and r q jc = 1.7.5 c/w for u3 devices.
mil - prf - 19500/560e 13 table i. group a inspection . insp ection 1 / mil - std - 750 symbol limit unit method conditions min max * subgroup 1 2 / visual and mechanical 3 / examination 2071 n = 45 devices, c = 0 solderability 3 /, 4 / resistance to solvents 3 /, 4 /, 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 /, 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4 / gr oup a, subgroup 2 bond strength 3 /, 5 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 decap internal visual (design verification) 2075 n = 4 device, c = 0 subgroup 1 visual and mechan ical inspection 2071 subgroup 2 breakdown voltage, collector to emitter 3011 bias condition d; i c = 50 ma dc; pulsed (see 4.5.1) v (br)ceo 100 v dc collector to emitter cutoff current 3041 bias condition d; v ce = 100 v dc i ceo 100 m a dc collector to emitter cutoff current 3041 bias condition a; v be = 1.5 v dc; v ce = 90 v dc i cex1 10 m a dc collector to base cutoff current 3036 bias condition d; v cb = 100 v dc i cbo 10 m a dc see footnote at e nd of table.
mil - prf - 19500/560e 14 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 - continued emitter to base, cutoff current 3061 bias condition d; v eb = 6.0 v dc i ebo 100 m a dc forward - current transfer ratio 3076 v ce = 2.0 v dc; i c = 0.5 a dc, pulsed (see 4.5.1) h fe1 60 forward - current transfer ratio 3076 v ce = 2.0 v dc; i c = 2.0 a dc; pulsed (see 4.5.1) h fe2 60 240 forward - current transfer ratio 3076 v ce = 2.0 v dc; i c = 5.0 a dc; pulsed (see 4.5.1) h fe3 40 collector to emitter voltage (saturated) 3071 i c = 2.0 a dc; i b = 0.2 a dc; pulsed (see 4.5.1) v ce(sat)1 0.7 v dc collector to emitter voltage (saturated) 307 1 i c = 5.0 a dc; i b = 0.5 a dc; pulsed (see 4.5.1) v ce(sat)2 1.2 v dc base to emitter voltage (saturated) 3066 test condition a; i c = 2.0 a dc; i b = 0.2 a dc; pulsed (see 4.5.1) v be(sat)1 1.2 v dc base to emitter voltage (saturated) 306 6 test condition a; i c = 5.0 a dc; i b = 0.5 a dc; pulsed (see 4.5.1) v be(sat)2 1.8 v dc subgroup 3 high - temperature operation t a = +150 c collector to emitter cutoff current 3041 bias condition a; v ce = 90 v dc; v be = 1.5 v dc; i cex2 1.0 ma dc low - temperature operation t a = - 55 c forward - current transfer ratio 3076 v ce = 2.0 v dc; i c = 2.0 a dc; pulsed (see 4.5.1) h fe4 12 see footnote at end of table.
mil - prf - 19500/560e 15 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 4 small - signal short - circuit forward - current transfer ratio 3306 v ce = 10 v dc; i c = 0.5 a dc; f = 10 mhz |h fe | 3 15 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz f 1 mhz c obo 250 pf input capacitance (output open - circuited) 3240 v be = 2.0 v dc; i c = 0; 100 khz f 1 mhz (see 4.5.2) c ibo 1,000 pf pulse response pulse delay time 3251 see figure 6 t d 100 ns pulse rise time 3251 see figure 6 t r 100 ns pulse storage time 3251 see figure 7 t s 2 m s pulse fall time 3251 see figure 7 t f 200 ns subgroup 5 safe operating area (continuous dc) 3051 t c = +25 c; t 3 0.5 s; 1 cycle test 1 v ce = 2.0 v dc; i c = 5.0 a dc test 2 test 3 end - point electrical measurements v ce = 5.0 v dc; i c = 2.0 a dc v ce = 90 v dc; i c = 55 ma dc see table i, group a, subgroup 2 subgroups 6 and 7 not applicable 1 / for sampling plan see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subg roup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for laser marked devices. 5 / not required for jans devices.
mil - prf - 19500/560e 16 * table ii. group e inspection (all quality levels) ? for qualification only . inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devices c = 0 hermetic seal fine leak gross leak 1071 electric al measurements see group a, subgroup 2 and table iii herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see group a, subgroup 2 and table iii herein. subgroups 3, 4, 5, 6 and 7 not applicable subgroup 8 reverse stability 1033 condition a for devices 3 400 v condition b for devices < 400 v 45 devices c = 0
mil - prf - 19500/560e 17 notes: 1. the rise time (t r ) of the applied pulse shall be 20 ns, d uty cycle 2 percent, and the generator source impedance shall be 50 w . 2. sampling oscilloscope: z in 3 1 m w , c in 20 pf, rise time 20 ns. 3. t on conditions: i c = 2 a, i b1 = 200 ma. figure 6. saturated turn - on switching waveform and time test cir cuit . notes: 1. the rise time (t r ) of the applied pulse shall be 20 ns, duty cycle 2 percent, and the generator source impedance shall be 50 w . 2. sampling oscilloscope: z in 3 1 m w , c in 20 pf, rise time 20 ns. 3 . t on conditions: c i = 2 a, i b1 = i b2 = 200 ma. figure 7. saturated turn - off switching time waveform and test circuit .
mil - prf - 19500/560e 18 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or ord er (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging activity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil - prf - 1 9500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and if required, the spec ific issue of individual documents referenced (see 2.2.1). c. the lead finish as specified (see 3.4.1). d. type designation and quality assurance level. e. packaging requirements (see 5.1). f. for die acquisition, the janhc or jankc letter version s hall be specified (see figures 2 and 3). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in qualified manufacturer?s list qml no.19500 whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal gover nment tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. information pertaining to qualification of products may be obtained from defense supply center, columbus, a ttn: dscc - vqe, p.o. box 3990, columbus, oh 43216 - 5000. 6.4 application guidance . the following pnp type transistor is complimentary to the npn device listed herein. npn pnp 2n5339 2n6193 6.5 suppliers of janhc and jankc die . the qualified die s uppliers with the applicable letter version (example, janhca2n6193) will be identified on the qml. janc ordering information pin manufacturers 33178 34156 43611 2n5339 JANHCA2N5339 jankca2n5339 janhcb2n5339 jankcb2n5339 janhcc2n5339 jankc c2n5339
mil - prf - 19500/560e 19 6.6 changes from previous issue . the margins of this revision are marked with an asterisk to indicate where changes from the previous amendment were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous amendment. custodians: p reparing activity: army - cr dla - cc air force 11 dla - cc (project 5961 - 2531) review activities: air force ? 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. not e: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced do cument(s) or to amend contractual requirements. i recommend a change: 1. document number mil - prf - 19500/560e 2. document date 6 march 2002 3. document title semiconductor device, transistor, npn, silicon, switching type 2n5339 and 2n53 39u3 jan, jantx, jantxv, jans, janhc and jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, f irst, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center, columbus attn: dscc - vac, p.o. box 3990 columbus, oh 43216 - 5000 if you do not recei ve a reply within 45 days, contact: defense standardization program office (dlsc - lm) 8725 john j. kingman, suite 2533, fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previous editions are obso lete whs/dior, feb 99

▲Up To Search▲

Price & Availability of JANHCA2N5339

	To Download JANHCA2N5339 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .