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mil-prf-19500/350g 2 april 2002 superseding mil-prf-19500/350f 18 august 2000 performance specification semiconductor device, transistor, pnp, silicon, low-power types: 2n3867, 2n3867s , 2n3868, and 2n3868s jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers t he performance requirements for pnp, silicon, switching transistor. four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in mil-prf-19500. 1.2 physical dimensions . see figure 1 (to- 5, to-39) for encapsulated devices, figures 2 and 3 for unencapsulated devices. * 1.3 maximum ratings . unless otherwise specified, t a = +25 c. types p t 1 / t a = +25 c p t 2 / t c = +25 c v cbo v ceo v ebo i c t stg and t op r jc 2n3867, s 2n3868, s w 1.0 1.0 w 10 10 v dc min 40 60 v dc min 40 60 v dc 4.0 4.0 a dc 3.0 3.0 c -65 to +200 -65 to +200 c/w 17.5 17.5 1 / derate linearly 5.71 mw/ c for t a > +25 c. 2 / derate linearly 5.71 mw/ c for t c > +25 c. amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. inch-pound beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: defens e supply center columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using the standardiza tion document improvement proposal (dd form 1426) appearing at the end of this document or by letter. the documentation and process conv ersion measures necessary to comply with this document shall be completed by 2 july, 2002.
mil-prf-19500/350g 2 1.4 primary electr ical characteristics . h fe c obo |hfe| v ce(sat) 2 i e = 0 i c = 100 ma dc i c = 1.5 a dc i c = 1.5 a dc i c = 1.5 a dc v ce = 2 v dc i c = 3.0 a dc v ce = 5 v dc v cb = 10 v dc 100 khz f 1 mhz v ce = 5 v dc f = 20 mhz i b = 150 ma dc i b = 150 ma dc t on t off 2n3867 2n3868 2n3867 2n3868 2n3867s 2n3868s 2n3867s 2n3968s pf ns max ns max v dc min max 40 200 30 150 20 20 120 3 12 100 600 0.75 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services , building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.)
mil-prf-19500/350g 3 dimensions symbol inches millimeters note min max min max cd .305 .335 7.75 8.51 6 ch .240 .260 6.12 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 7 ld .016 .019 0.41 0.48 8,9 ll see note 14 lu .016 .019 0.41 0.48 8,9 l1 .050 1.27 8,9 l2 .250 6.35 8,9 p .100 2.54 7 q .030 0.76 5 tl .029 .045 0.74 1.14 3,4 tw .028 .034 0.71 0.86 3 r .010 0.25 10 45 tp 45 tp 7 1, 2, 10, 12, 13, 14 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at ma ximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by gauging procedure. 8. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in and beyond ll minimum. 9. all three leads. 10. the collector shall be internally connected to the case. 11. dimension r (radius) applies to both inside corners of tab. 12. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 13. lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. for non-s-suffix devices (t0-5), dimension ll = 1. 5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. for s-suffix types (t0-39), dimension ll = .5 inches (12.70 mm) min. and .750 inches (19.05 mm) max figure 1. physical dimens ions (similar to to-5, t0-39) . to-5, 39
mil-prf-19500/350g 4 a version notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. the physical characteristics of the die are: thickness: .008 inch (0.20 mm) mi nimum, .012 inch (0.30 mm) maximum. top metal: aluminum 25,000 ? nominal. back metal: gold 2,500 ? minimum, 3,000 ? nominal. back side: collector; bonding pad: b = .045 inch (1.14 mm) x .008 inch (0.20 mm). e = .039 inch (0.99 mm) x .008 inch (0.20 mm). figure 2. janhca and jankca die dimensions .
mil-prf-19500/350g 5 b version 1. chip size.............?040 x .040 inch .001 inch 2. chip thickness....?010 .0015 inch 3. top metal....?.......aluminum 15,000 ? minimum, 18,000 ? nominal 4. back metal...?..?a. al/ti/ni/ag 12k ? /3k ? /7k ? /7k ? min.,15k ? /5k ? /10k ? /10k ? nom. b. gold 2,500 ? minimum, 3,000 ? nominal c. eutectic mount - no gold 5. backside...............collector 6. bonding pad..?.....b = .006 x .008 inch, e = .006 x .004 inch figure 3. janhcb and jankcb die dimensions .
mil-prf-19500/350g 6 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. noth ing in this document, however , supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500 and on figures 1, 2 and 3 herein. 3.4.1 lead finish . lead finish shall be solderable as defi ned in mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2). 3.5 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i herein. 3.6 electrical test requirements . the electrical test requirements s hall be the subgroups specified in table i herein. 3.7 marking . marking shall be in accordance with mil-prf-19500. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (s ee 4.4) and tables i, ii, and iii.
mil-prf-19500/350g 7 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500. * 4.2.2 group e qualification . group e inspection shall be performed for qua lification or re-qualification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii, the tests specified in table ii herein it shall be performed by the fi rst inspection lot processed to this revision to maintain qualification. * 4.3 screening (jans, jantxv, and jantx levels only) . screening shall be in accordance with mil-prf-19500 (table iv) and as specified herein. the following measurem ents shall be made in accordance with table i herein. devices that exceed the limits of t able i herein shall not be acceptable. screen (see table iv of mil-prf-19500) measurement jans level jantx and jantxv levels 3c thermal impedance, method 3131 of mil-std-750. thermal impedance, method 3131 of mil-std-750. 7 hermetic seal (optional) (1) 9 i cbo2 and h fe4 not applicable 10 24 hours minimum 24 hours minimum 11 i cex1 ; h fe2 ; ? i cex1 100 percent of initial value or 200 na dc, whichever is greater; ? h fe2 = 15 percent of initial value. i cex1 ; h fe2 12 see 4.3.2 240 hours minimum see 4.3.2 80 hours minimum 13 subgroup 2 and 3 of table i herein; ? i cex1 100 percent of initial value or 200 na dc, whichever is greater; ? h fe2 = 15 percent of initial value. subgroup 2 of table i herein; ? i cex1 100 percent of initial value or 200 na dc, whichever is greater; ? h fe2 = 15 percent of initial value. (1) hermetic seal test shall be performed in screen 7. * 4.3.1. screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500, ?discrete semiconductor die/chip lot accept ance?. burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.3.2. power burn-in conditions . power burn-in conditions are as follows: v cb = 10 - 30 v dc, t a = room ambient as defined in 4.5 of mil-std-750. power shall be appli ed to the device to achieve a junction temperature, t j = +135 c minimum and a minimum power dissipation = 75 percent of max p t as defined in 1.3.
mil-prf-19500/350g 8 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500 and as specified herein. if alternate screening is being perfo rmed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the require ments of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection . group b inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in via (jans) and 4.4.2.1 herein. elec trical measurements (end-poi nts) and delta requirements shall be in accordance with group a, subgroup 2 and table iii herein. see 4.4.2.2 for jan, jantx, and jantxv group b testing. electrical measurem ents (end-points) and delta requirement s jan, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accor dance with group a, subgroup 2 and table iii herein. 4.4.2.1 group b inspection, appendix e, table via (jans) of mil-prf-19500 . subgroup method condition * b4 1037 v cb = 10 v dc; 2,000 cycles. * b5 1027 (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) v cb = 10 v dc, p d 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum sample size in accordance with table via of mil-prf-19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. b6 3131 r jc = 17.5 c/w, see 4.5.2. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pull a new sa mple at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition 1 1039 steady-state life: test condition b, 340 hours, v cb = 10 - 30 v dc. n = 45, c = 0. power shall be applied to the device to achieve t j +150c and power dissipation of p d 75 percent of the rated p t (see 1.3). 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot ever y twelve months of wafer production. group b, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperatur e life (non-operating), t a = +200 c. n = 22, c = 0, t = 340 hours.
mil-prf-19500/350g 9 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be se lected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in acco rdance with the conditions specified for subgroup testing in table vii of mil-prf-19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and table iii herein. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500 . subgroup method condition c2 2036 test condition e. c6 1026 1,000 hours at v cb = 10 v dc; t j = +150 c min. power shall be applied to the device to achieve t j +150c and a power dissipation of p d 75 percent of the rated p t (see 1.3). 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e. c5 3131 r jc (see 4.5.2). c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c s hall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testi ng of a subgroup using a single device type enclosed in the intended package type shall be considered as comply ing with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in appendix e, table ix of mil-prf-19500 and as specified herein. electrical measurements (endpoints) and delta measurements shall be in accordance wi th the applicable steps of table i, subgroup 2; except z jx need not be performed, and table iii herein.
mil-prf-19500/350g 10 4.5 method of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 thermal resistance . thermal resistance measurements sha ll be conducted in accordance with method 3131 of mil-std-750. the following conditions shall apply: a. collector current magnitude shall be 500 ma dc. b. collector emitter voltage magnitude shall be 10 v dc. c. reference temperature measuring point shall be +25 c t r +35 c. the chosen reference temperature shall be recorded before the test is started. d. maximum limit shall be r ja = 175 c/w. e. maximum limit shall be r jc = 17.5 c/w.
mil-prf-19500/350g 11 table i. group a inspection . inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 1 2 / visual and mechanical 3 / examination 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 n = 15 leads, c = 0 resistance to 3 / 4 / 5 / solvent 1022 n = 15 devices, c = 0 temperature cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 5 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs, n = 11 wires, c = 0. decap internal visual (design verification) 2075 n = 4 devices, c = 0. subgroup 2 collector to base cutoff current 2n3867, 2n3867s 2n3868, 2n3868s 3036 v cb = 40 v dc v cb = 60 v dc i cbo1 100 a dc emitter to base cutoff current 3061 bias condition d; v eb = 4 v dc i ebo1 100 a dc breakdown voltage, collector to emitter 2n3867, 2n3867s 2n3868, 2n3868s 3061 bias condition d; i c = 20 ma dc; pulsed (see 4.5.1) v (br)ceo 40 60 v dc v dc collector to emitter cutoff current 2n3867, 2n3867s 2n3868, 2n3868s 3041 bias condition a; v eb = 2.0 v dc v ce = 40 v dc, v ce = 60 v dc i cex1 1.0 a dc see footnotes at end of table.
mil-prf-19500/350g 12 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 2 - continued forward-current transfer ratio 2n3867, 2n3867s 2n3868, 2n3868s 3076 v ce = 1.0 v dc, i c = 500 ma dc, pulsed (see 4.5.1) h fe1 50 35 forward-current transfer ratio 2n3867, 2n3867 s 2n3868, 2n3868s 3076 v ce = 2.0 v dc, i c = 1.5 a dc, pulsed (see 4.5.1) h fe2 40 30 200 150 forward-current transfer ratio 2n3867, 2n3867s 2n3868, 2n3868s 3076 v ce = 3.0 v dc, i c = 2.5 a dc, pulsed (see 4.5.1) h fe3 25 20 forward-current transfer ratio 3076 v ce = 5.0 v dc, i c = 3.0 a dc, pulsed (see 4.5.1) h fe4 20 collector to emitter voltage (saturated) 3071 i c = 500 ma dc; i b = 50 ma dc, pulsed (see 4.5.1) v ce(sat)1 0.5 v dc collector to emitter voltage (saturated) 3071 i c = 1.5 a dc; i b = 150 ma dc; pulsed (see 4.5.1) v ce(sat)2 0.75 v dc collector to emitter voltage (saturated) 3071 i c = 2.5 a dc; i b = 250 ma dc; pulsed (see 4.5.1) v ce(sat)3 1.5 v dc base emitter voltage (saturated) 3066 test condition a; i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v be(sat)1 1.0 v dc base emitter voltage (saturated) 3066 test condition a; i c = 1.5 a dc; i b = 150 ma dc; pulsed (see 4.5.1) v be(sat)2 0.9 1.4 v dc base emitter voltage (saturated) 3066 test condition a; i c = 2.5 a dc; i b = 250 ma dc;pulsed (see 4.5.1) v be(sat)3 2.0 v dc see footnotes at end of table.
mil-prf-19500/350g 13 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 3 high temperature operation: t a = +150 c collector to emitter cutoff current 3041 bias condition a, v eb = 2.0 v dc i cex2 200 a dc 2n3867, 2n3867s v ce = 40 v dc 2n3868, 2n3868s v ce = 60 v dc low temperature operation: t a = -55 c forward-current transfer ratio 3076 v ce = 1.0 v dc, i c = 500 ma dc, pulsed (see 4.5.1) h fe5 2n3867, 2n3867s 25 2n3868, 2n3868s 17 subgroup 4 magnitude of common- emitter small-signal short-circuit forward- current transfer ratio 3306 v ce = 5 v dc, i c = 100 ma dc, f = 20 mhz |h fe | 3 12 open circuit output capacitance 3236 v cb = 10 v dc, i e = 0, 100 khz f 1 mhz c obo 120 pf input capacitance (output open-circuited) 3240 v eb = 3.0 v dc, i c = 0, 100 khz f 1 mhz c ibo 800 pf subgroup 5 pulse response 3251 test condition a delay time v cc = -30 v dc, v eb = 0 , i c = 1.5 a dc, i b1 = 150 ma dc, see figure 4 t d 35 ns see footnotes at end of table.
mil-prf-19500/350g 14 table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 5 - continued pulse response 3251 test condition a rise time v cc = -30 v dc, v eb = 0 v dc, i c = 1.5 a dc, i b1 = 150 ma dc, see figure 4 t r 65 ns storage time v cc = -30 v dc, v eb = 0 v dc, i c = 1.5 a dc, i b1 = i b2 = 150 ma dc, see figure 5 t s 500 ns fall time v cc = -30 v dc, v eb = 0 v dc, i c = 1.5 a dc, i b1 = i b2 = 150 ma dc, see figure 5 t f 100 ns subgroup 6 soa (continuous dc) 3051 t c = +25 c, 1 cycle, t = 1.0 s, (see figure 6) test 1 v ce = 3.33 v dc, i c = 3 a dc test 2 2n3867, 2n3867s v ce = 40 v dc, i c = 160 ma dc 2n3868, 2n3868s v ce = 60 v dc, i c = 80 ma dc electrical measurements see table iii, steps 1, and 2. 1 / for sampling plan see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/350g 15 table ii. group e inspection (all qualit y levels) - for qualification only . inspection mil-std-750 qualification method conditions * subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements 1051 1071 test condition c, 500 cycles see group a, subgroup 2 herein. 45 devices c = 0 * subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles, forced air cooling allowed on cooling cycle only. 45 devices c = 0 electrical measurements see group a, subgroup 2 herein. subgroups 3, 4, 5, 6, and 7 not applicable * subgroup 8 reverse stability 1033 condition a for devices 400 v dc. condition b for devices < 400 v dc. 45 devices c = 0
mil-prf-19500/350g 16 table iii. delta requirements . step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current 3041 bias condition d ? i cex1 1 / 100 percent of initial value or 200 na dc, whichever is greater. 2n3867, 2n3867s 2n3868, 2n3868s v ce = 40 v dc v ce = 60 v dc 2 forward current transfer ratio 3076 v ce = 2 v dc; i c = 1.5 a dc; pulsed see 4.5.1 ? h fe2 1 / 15 percent change from initial reading. 1 / devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/350g 17 figure 4. equivalent circuit for measuring delay and rise times . figure 5. equivalent circuit for measuring storage and fall times .
mil-prf-19500/350g 18 figure 6. maximum soa graph (continuous dc) .
mil-prf-19500/350g 19 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s should be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example, janhca2n3867) will be identified on the qpl. janc ordering information pin manufacturers 33178 43611 2n3867 janhca2n3867, jankca2n 3867 janhcb2n3867, jankcb2n3867 2n3868 janhca2n3868, jankca2n 3868 janhcb2n3868, jankcb2n3868 * 6.5 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue.
mil-prf-19500/350g 20 custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2569) dla - cc review activities: army - ar, av, mi, sm navy - as, mc air force - 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blo cks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on c urrent contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced docu ment(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/350g 2. document date 2 april 2002 3. document title semiconductor device, transistor, pnp, silicon, low-power types: 2n3867, 2n3867s, 2n3868, and 2n3868s, jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include pr oposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7 . date submitted 8. preparing activity a. name alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692- 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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