inchange semiconductor isc product specification isc silicon pnp power transistors bdt32f/af/bf/cf/df description dc current gain -h fe = 25(min)@ i c = - 1.0a collector-emitter sustaining voltage- : v ceo(sus) = -40v(min)- bdt32f; -60v(min)- bdt32af -80v(min)- bdt32bf; -100v(min)- BDT32CF -120v(min)- bdt32df complement to type bdt31f/af/bf/cf/df applications designed for use in audio amplifier output stages , general purpose amplifier and high s peed switching applications absolute maximum rating s (t a =25 ) symbol parameter value unit bdt32f -80 bdt32af -100 bdt32bf -120 BDT32CF -140 v cbo collector-base voltage bdt32df -160 v bdt32f -40 bdt32af -60 bdt32bf -80 BDT32CF -100 v ceo collector-emitter voltage bdt32df -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a i cm collector current-peak -5 a i b b base current -1 a p c collector power dissipation t c =25 22 w t j junction temperature 150 t stg storage ttemperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 8.12 /w r th j-a thermal resistance,junction to ambient 55 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors bdt32f/af/bf/cf/df electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt32f -40 bdt32af -60 bdt32bf -80 BDT32CF -100 v ceo(sus) collector-emitter sustaining voltage bdt32df i c = -30ma; i b = 0 -120 v bdt32f/af/bf/cf i c = -3a; i b = -0.375a b -1.2 v ce(sat) collector-emitter saturation voltage bdt32df i c = -3a; i b = -0.75a b -2.5 v v be(on) base-emitter on voltage i c = -3a ; v ce = -4v -1.8 v i ces collector cutoff current v ce = v ceomax ; v be = 0 -0.2 ma bdt32f/af v ce = -30v; i b = 0 b bdt32bf/cf v ce = -60v; i b = 0 b i ceo collector cutoff current bdt32df v ce = -90v; i b = 0 b -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.2 ma h fe-1 dc current gain i c = -1a ; v ce = -4v 25 bdt32f/af/bf/cf 10 50 h fe-2 dc current gain bdt32df i c = -3a ; v ce = -4v 5 f t current-gain?bandwidth product i c = -0.5a ; v ce = -10v 3 mhz switching times t on turn-on time 0.3 s t off turn-off time i c = -1.0a; i b1 = -i b2 = -0.1a 1.0 s isc website www.iscsemi.cn
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