DG271 siliconix s-53750erev. e, 14-jul-97 1 high-speed quad monolithic spst cmos analog switch features benefits applications fast switching t on : 55 ns low charge injection: 5 pc low r ds(on) : 32 ttl/cmos compatible low leakage: 50 pa fast settling times reduced switching glitches high precision high speed switching sample/hold digital filters op amp gain switching flight control systems automatic test equipment choppers communication systems description the DG271 high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. built on siliconix' proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. an epitaxial layer prevents latchup. functional block diagram and pin configuration 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in 1 in 2 d 1 d 2 s 1 s 2 v v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 dual-in-line and soic top view s 1 s 2 v v+ nc nc gnd nc s 4 s 3 lcc nc in 3 d 3 d 4 in 4 nc in 2 d 2 d 1 in 1 key 910111213 4 5 6 7 8 1 2 319 20 14 15 16 17 18 truth table logic switch 0 on 1 off lo g ic a0o 0.8 v logic 0 0 . 8 v logic a 1 o 2.0 v logic a1o 2 . 0 v updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70043.
DG271 2 siliconix s-53750erev. e, 14-jul-97 ordering information temp range package part number 0 to 70 c 16-pin plastic dip DG271cj 40 to 85 c 16-pin narrow soic DG271dy DG271ak 16-pin cerdip DG271ak/883 55 to 125 c 5962-8671602mea lcc - 20 DG271az/883 lcc - 20 5962-8671602m2a absolute maximum ratings v+ to v 44 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gnd to v 25 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . digital inputs a v s , v d (v) 2 v to (v+) +2 v or . . . . . . . . . . . . . . . . 20 ma, whichever occurs first current, any terminal 30 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . peak current, s or d (pulsed at 1 ms, 10% duty cycle max) 100 ma . . . . . . . . . . . . . . . . . . . storage temperature (ak, az, dy suffix) 65 to 150 c . . . . . (cj suffix) 65 to 125 c . . . . . . . . . . . . . power dissipation (package) b 16-pin plastic dip c 470 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-pin plastic narrow soic d 600 mw . . . . . . . . . . . . . . . . . . . . . . . . 16-pin cerdip e 900 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lcc-20 f 750 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes: a. signals on s x , d x , or in x exceeding v+ or v will be clamped by internal diodes. limit forward diode current to maximum current ratings. b. all leads welded or soldered to pc board. c. derate 6.5 mw/ c above 75 c d. derate 7.6 mw/ c above 75 c e. derate 12 mw/ c above 75 c f. derate 10 mw/ c above 75 c schematic diagram (typical channel) figure 1. gnd v d x s x v+ 5 v reg v+ in x v level shift/ drive
DG271 siliconix s-53750erev. e, 14-jul-97 3 specifications a conditions unless otherwise specified v+ 15 v v 15 v a suffix 55 to 125 c c, d suffix 0 to 70 c 40 to 85 c parameter symbol v+ = 15 v, v = 15 v v in = 2.4 v, 0.8 v f temp b typ c min d max d min d max d unit analog switch analog signal range e v analog full 15 15 15 15 v drain-source on-resistance r ds(on) i s = 1 ma, v d = 10 v room full 32 50 75 50 75 switch off leakage current i s(off) v d = 14 v v s = 14 v room full 0.05 1 60 1 60 1 20 1 20 s w it c h of f l ea k age c urren t i d(off) v d = 14 v , v s = 14 v room full 0.05 1 60 1 60 1 20 1 20 na channel on leakage current i d(on) + i s(on) v s = v d = 14 v room full 0.05 1 60 1 60 1 20 1 20 digital control input current with voltage high i inh v in = 2 v full 0.010 1 1 1 1 i npu t c urren t w ith v o lt age hi g h i inh v in = 15 v full 0.010 1 1 1 1 a input current with voltage low i inl v in = 0 v full 0.010 1 1 1 1 dynamic characteristics turn-on time t on v s = 10 v sfi 2 room full 55 65 80 65 80 ns turn-off time t off s see figure 2 room full 50 65 80 65 80 ns charge injection q c l = 1 nf, v s = 0 v v gen = 0 v, r gen = 0 see figure 3 room 5 pc source off capacitance c s(off) v s = 0 v, v in = 5 v f1mh room 8 drain off capacitance c d(off) s , in f = 1 mhz room 8 pf channel on capacitance c d ( on) v d = v s = 0 v, v in = 0 v room 30 off isolation oirr c l = 10 pf, r l = 1 k f = 100 khz room 85 db crosstalk x talk f = 100 khz see figures 4 and 5 room 100 db supply positive supply current i+ all channels on or off room full 5.5 7.5 9 7.5 9 ma negative supply current i all channels on or of f room full 3.4 6 8 6 8 ma notes: a. refer to process option flowchart. b. room = 25 c, full = as determined by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. f. v in = input voltage to perform proper function.
DG271 4 siliconix s-53750erev. e, 14-jul-97 typical characteristics 20 16 12 8 4 0 4 8 12 16 20 0 10 20 30 40 50 60 70 5 v r ds(on) vs. v d and power supply voltages v d drain voltage (v) 10 v 15 v 20 v r ds(on) drain-source on-resistance ( ) 0 10 20 30 40 50 15 10 5 0 5 10 15 r ds(on) vs. v d and temperature v d drain voltage (v) 85 c 25 c 55 c 0 c v+ = 15 v v = 15 v r ds(on) drain-source on-resistance ( ) 0 0.5 1 1.5 2 2.5 v in () v input switching threshold vs. supply voltage positive/negative supplies (v) 4 6 8 10 12 14 16 18 20 leakage currents vs. temperature temperature ( c) leakage 55 35 15 5 25 45 65 85 10 pa 100 pa 1 na 10 na 105 125 i s(off), i d(off) i d(on) 55 25 0 25 50 75 100 125 30 35 40 45 50 55 temperature ( c) switching times vs. temperature switching time (ns) t on t off v+ = 15 v v = 15 v 30 35 40 45 50 55 4 6 8 10 12 14 16 18 20 switching time vs. power supply voltage supply voltage (v) switching time (ns) t on t off
DG271 siliconix s-53750erev. e, 14-jul-97 5 typical characteristics (cont'd) switching times vs. temperature switching times vs. power supply voltage v+ positive supply (v) temperature ( c) switching time (ns) switching time (ns) 30 40 50 60 70 80 90 t (off) t (on) v+ = 15 v v = 15 v 60 80 100 120 140 160 180 40 4 6 8 10 12 14 16 18 20 55 35 15 5 25 45 65 85 105 125 test circuits figure 2. switching time 10 v r l r l + r ds(on) v o = v s c l (includes fixture and stray capacitance) v v+ in s c l 35 pf d 5 v r l 1 k v o 15 v gnd +15 v 50% 0 v 5 v t off t on v o v s 90% t r <20 ns t f <20 ns logic input switch input switch output v o
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