2001. 6. 28 1/3 semiconductor technical data KTC3535T epitaxial planar npn transistor revision no : 0 relay drivers, lamp drivers, motor drivers and strobes application. features adoption of mbit processes. high current capacitance. low collector-to-emitter saturation voltage. high speed switching. ultrasmall-sized package permitting applied sets to be made small and slim. high allowable power dissipation. complementary to kta1535t maximum rating (ta=25 1 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k0.60 l0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ 1. emitter 2. base 3. collector electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5 v collector current dc i c 3 a pulse i cp 5 base current i b 600 ma collector power dissipation p c * 0.9 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 * package mounted on a ceramic board (600 m ' 0.8 j ) type name marking lot no. h d characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =12v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 0.1 a collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 20 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 20 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 5 - - v collector-emitter saturation voltage v ce(sat) i c =1.5a, i b =30ma - 120 150 mv base-emitter saturation voltage v be(sat) i c =1.5a, i b =30ma - 0.85 1.2 v dc current gain h fe v ce =2v, i c =500ma 200 - 560 transition frequency f t v ce =2v, i c =500ma - 180 - mhz collector output capacitance c ob v cb =10v, f=1mhz - 30 - pf swiitching time turn-on time t on - 30 - ns storage time t stg - 210 - fall time t f - 11 - i b1 b2 i input output 50 ? 220 f pw=20 s dc 1% 470 f r v 1k ? l r be v =-5v cc v =5v 20i =-20i =i =1.5a b1 b2 c < =
2001. 6. 28 2/3 KTC3535T revision no : 0 v - i c collector current i (a) c collector current i (a) collector-emitter voltage v (v) 0 ce 0 i - v c ce 0.2 0.4 0.6 0.8 1.0 1 2 3 4 5 ce(sat) c dc current gain h fe collector current i (a) c ce(sat) collector-emitter saturation c collector current i (a) collector-emitter voltage v (v) 0 ce 0 i - v c ce 12345 1 2 3 4 5 i =0ma 2ma 2ma 5ma 5ma 10ma 10ma 15ma 15ma 20ma 20 ma 25ma 25 ma 40ma 40ma 60ma 1ma 1ma b i /i =50 cb i /i =50 cb i /i =20 cb i =0ma b voltage v (mv) h - i fe c ta=-25 c v =2v ce ta= 25 c ta= 75 c t a =75 c ta =75 c ta =25 c t a =- 25 c ta=2 5 c ta=-25 c ta=25 c ta=75 c ta=-25 c 0.1 10 0.3 0.5 1 3 5 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 1 0.1 0.3 1 3 10 3 5 10 30 50 100 300 500 1k v - i c collector current i (a) be(sat) c be(sat) base-emitter saturation voltage v (v) 0.01 0.03 0.1 0.3 1 3 10 v - i c collector current i (a) ce(sat) c ce(sat) collector-emitter saturation voltage v (mv) 0.01 0.03 1 0.1 0.3 1 3 10 3 5 10 30 50 100 300 500 1k 100 300 500 700 1k
2001. 6. 28 3/3 KTC3535T revision no : 0 collector output capacitance ob collector-base voltage v (v) cb c (pf) c - v ob cb transition frequency f (mhz) t collector current i (a) c 30 1k f - i t c 50 100 300 500 0.01 0.03 0.1 1 3 0.3 f=1mhz ta=75 c v =2v ce v =2v ce ta=-25 c ta=25 c 135 30 10 c collector current i (a) base-emitter voltage v (v) 0 be 0 0.5 i - v c be 0.2 0.4 0.6 0.8 1.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 10 30 50 70 100 collector current i (a) c collector-emitter voltage v (v) ce safe operating area 0.02 0.1 0.3 0.5 3 5 1 10 0.05 0.2 1 3 10 20 mounted on a ceramic board single nonrepetitive pulse ta=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c i max (contin- uous) c 10 0ms * 10m s * 1 ms* 50 0 s* d c op e rati o n (600mm ` 0.8mm) 2 c collector power dissipation p (w) ambient temperature ta ( c) 0 0 pc - ta 20 40 60 80 100 120 140 160 0.2 0.4 0.6 0.8 1.0 mounted on a ceramic board (600mm ` 0.8mm) 2
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