advance product information june 30, 2005 1 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com dc - 60 ghz low noise amplifier TGA4811 key features ? 60 ghz bandwidth ? 3.0 db noise figure ? > 15 db small signal gain ? 13 dbm p1db ? +/- 7 ps group delay variation ? bias: 6v, 50 ma ? 0.15 um 3mi mhemt technology ? chip dimensions: 1.30 x 1.06 x 0.1 mm (0.051 x 0.042 x 0.004) in primary applications ? wideband lna / gain block ? test equipment ? 40 gb/s optical networks measured data bias conditions: vd = 6 v, id = 50 ma note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) output p1db (dbm) 0 2 4 6 8 10 12 14 16 noise figure (db) nf at 4.5v,42 ma p1db at 4.5v,42 ma p1db at 6v,52 ma description the triquint TGA4811 is a dc - 60 ghz low noise amplifier that typically provides 15 db small signal gain and input and output return loss is <10db. normal noise figure is 3.0 db from 2 - 40 ghz. p1db is 13 dbm. the TGA4811 is an excellent choice for test equipment, 40gb/s optical network applications, and general wideband lna and gain block applications . the TGA4811 is 100% rf tested to ensure performance compliance. lead-free & rohs compliant. samples are available. 0 2 4 6 8 10 12 14 16 18 0 102030405060 frequency (ghz) gain (db) -24 -20 -16 -12 -8 -4 0 return loss (db )
advance product information june 30, 2005 2 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 6.5 v 2/ v - negative supply voltage range -2 to 0 v i + positive supply current 200m a ? i g ? gate supply current 10 ma 3/ p in input continuous wave power tbd p d power dissipation 0.69 w 2/ 4 / t ch operating channel temperature 110 0 c5/ t m mounting temperature (30 seconds) 175 0 c t stg storage temperature -65 to 110 0 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of resistors voltage and 3v (max) on mhemt. 3/ total current for the entire mmic. 4/ when operated at this bias condition with a base plate temperature of 70 o c, the median life will be reduced. 5/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGA4811
advance product information june 30, 2005 3 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com table ii electrical characteristics (ta = 25 0 c, nominal) TGA4811 parameter typical units drain voltage 6 v quiescent current 50 ma small signal gain, s21 15 db input return loss, s11 10 db output return loss, s22 15 db reverse isolation, s12 -40 db output power (p1db) 13 dbm power @ saturated, psat 15 dbm noise figure 3.0 db table iii thermal information parameter test conditions t ch ( o c) r t jc ( q c/w) t m (hrs) r q jc thermal resistance (channel to backside of package) vd = 6 v i d = 0.05 a pdiss = 0.3 w 80 33.3 8.7e8 note: die backside epoxy attached to carrier at 70 c baseplate temperature.
advance product information june 30, 2005 4 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com TGA4811 measured data bias conditions: vd = 6 v, id = 50 ma 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) output p1db (dbm) 0 2 4 6 8 10 12 14 16 noise figure (db) nf at 4.5v,42 ma p1db at 4.5v,42 ma p1db at 6v,52 ma 0 2 4 6 8 10 12 14 16 18 0 1020304050607080 frequency (ghz) gain (db) -24 -20 -16 -12 -8 -4 0 return loss (db)
advance product information june 30, 2005 5 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com TGA4811 measured data bias conditions: vd = 6 v, id = 50 ma 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 55 60 frequency (ghz) group delay (ps) 0 2 4 6 8 10 12 14 16 18 20 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 pin ( dbm ) gain (db) 6 8 10 12 14 16 18 20 22 24 26 output power (dbm) 6v, 52ma 6v, 52ma 4.5v, 42ma 4.5v, 42ma
advance product information june 30, 2005 6 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com mechanical drawing TGA4811 units: millimeters thickness: 0.1 chip edge to bond pad dimension are shown to center of bond pad. chip size tolerance: 0.051 v g1 v d rf out rf in vg 2 pad size (mm) vd 0.10x0.10 vg1 0.10x0.10 vg2 0.10x0.10 rf in 0.10x0.10 rf out 0.10x0.10
advance product information june 30, 2005 7 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com chip assembly diagram TGA4811 3 (three) 0.7 mil chisel bond wires at rf in and rf out or 1 (one) 3 mil ribbon at rf in and rf out. vg2 is optional for the circuit. vg2 vd vg1 1800pf 1800pf 0.1uf 0.1uf rf in rf out 100pf
advance product information june 30, 2005 8 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com TGA4811 rf(in) vd(rfout) vg1 vg2 (no connection) TGA4811 vdt bias tee (pspl 5542) rf(out) v d (no connection) dc block (pspl 5509) 1800pf 1800pf 0.1uf 100pf 0.1uf optional testing circuit schematic
advance product information june 30, 2005 9 triquint semiconductor texas phone: (972)994 8465 fax: (972)994 8504 web: www.triquint.com info: info-mmw@tqs.com assembly process notes TGA4811 reflow process assembly notes: use epoxy with limited exposure to temperatures at 175 o c. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 175 o c.
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