DE275X2-102N06A rf power mosfet v dss = 1000 v i d25 = 16 a r ds(on) = 0.8 p dc = 1180 w symbol test conditions maximum ratings v dss t j =25cto150c 1000 v v dgr t j =25cto150c;r gs =1m 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c =25c 16 a i dm t c =25c,pulsewidthlimitedbyt jm 48 a i ar t c =25c 6 a e ar t c =25c 20 mj dv/dt i s i dm ,di/dt ?100a/ s,v dd v dss , t j 150c,r g =0.2 5 v/ns i s =0 >200 v/ns p dc (1) 1180 w p dhs (1) t c =25c,derate5.0w/cabove25c 750 w p damb (1) t c =25c 5.0 w symbol test conditions characteristic values t j =25cunlessotherwisespecified min. typ. max. v dss v gs =0v,i d =3ma 1000 v v gs(th) v ds =v gs ,i d =4ma 2.5 5.5 v i gss v gs =20v dc ,v ds =0 100 na i dss v ds =0.8v dss t j =25c v gs =0t j =125c 50 1 a ma r ds(on) 1.6 g fs v ds =15v,i d =0.5i d25 ,pulsetest 2 7.5 s v gs =15v,i d =0.5i d25 pulsetest,t 300 s,dutycycled 2% r thjc (1) 0.25 c/w r thjhs (1) 0.50 c/w t j 55 +175 c t jm 175 c t stg 55 +175 c t l 1.6mm(0.063in)fromcasefor10s 300 c weight 4 g features ? isolatedsubstrate ? highisolationvoltage(>2500v) ? excellentthermaltransfer ? increasedtemperatureandpower cyclingcapability ? ixysadvancedlowq g process ? lowgatechargeandcapacitances ? easiertodrive ? fasterswitching ? lowr ds(on) ? verylowinsertioninductance(<2nh) ? noberylliumoxide(beo)orother hazardousmaterials advantages ? highperformancepushpullrf package ? optimizedforrfandhighspeed switchingatfrequenciesto>100mhz ? easytomountnoinsulatorsneeded ? highpowerdensity ? common source push-pull pair ? n-channel enhancement mode ? low q g and r g ? high dv/dt ? nanosecond switching drain1 sg1 sd1 gate1 drain2 sg2 sd2 gate2 thede275x2102n06aisamatchedpairofrfpowerm osfetdevicesina commonsourceconfiguration.thedeviceisoptimize dforpushpullorparal leloperationinrfgeneratorsandamplifiersatfr equenciesto>65mhz. note:allspecificationsarepereach transistor,unlessotherwisenoted. (1) thermalspecificationsareforthe package,notpertransistor unlessnoted,specificationsareforeachoutputde vice source1 source2
DE275X2-102N06A rf power mosfet symbol test conditions characteristic values (t j =25cunlessotherwisespecified) min. typ. max. r g 0.3 c iss 1800 pf c oss v gs =0v,v ds =0.8v dss(max) , f=1mhz 130 pf c rss 25 pf t d(on) 3 ns t on v gs =15v,v ds =0.8v dss i d =0.5i dm r g =0.2 (external) 2 ns t d(off) 4 ns t off 5 ns q g(on) 50 nc q gs v gs =10v,v ds =0.5v dss i d =0.5i d25 20 nc q gd 30 nc c stray backmetaltoanypin 21 pf source-drain diode characteristic values (t j =25cunlessotherwisespecified) symbol test conditions min. typ. max. i s v gs =0v 6 a i sm repetitive;pulsewidthlimitedbyt jm 96 a v sd 1.5 v t rr 200 ns i f =i s ,v gs =0v, pulsetest,t 300 s,dutycycle 2% q rm i f =i s ,di/dt=100a/ s, v r =100v 0.6 c i rm 4 a ixysrfreservestherighttochangelimits,test conditionsanddimensions. ixysrfmosfetsarecoveredbyoneormoreofthefo llowingu.s.patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5 ,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5 ,486,715 5,381,025 5,640,045 (1) theseparametersapplytothepackage,notindi vidualmosfetdevices. fordetaileddevicemountingandinstallationinstr uctions,seethe de- series mosfet mounting instructions technicalnoteonixysrfsweb siteatwww.ixysrf.com/technical_support/app_notes. html
DE275X2-102N06A rf power mosfet 10 100 1000 10000 0 100 200 300 400 500 600 700 800 900 1000 vds in volts capacitance in pf ciss coss crss 275x2-102n06a capacitances vs vds s = s1 = source1 s = s1 = source1 s = s2 = source2 s = s2 = source2 g1 = gate1 g2 = gate2 d1 = drain1 d2 = drain2 note:sourcess1,s2areindependent,havingnocom monconnectionbetweenthemforthepackagediagram .
DE275X2-102N06A rf power mosfet 102n06a de-series spice model thedeseriesspicemodelisillustratedinfigure 1.themodelisanexpansionofthespicelevel3 mosfetmodel.itincludesthestrayinductiveterms l g ,l s andl d .rdisther ds(on) ofthedevice,rds istheresistiveleakageterm.theoutputcapacitan ce,c oss ,andreversetransfercapacitance,c rss are modeledwithreversedbiaseddiodes.thisprovides avaractortyperesponsenecessaryforahigh powerdevicemodel.theturnondelayandtheturn offdelayareadjustedviaronandroff. figure1deseriesspicemodel thisspicemodelmaybedownloadedasatextfilef romtheixysrfwebsiteat www.ixysrf.com netlist: *sym=powmosn .subckt102n06a102030 *terminals:dgs *1000volt6amp1.6ohmnchannelpowermosfe t m11233dmosl=1uw=1u ron56.5 don62d1 rof571.0 dof27d1 d1crs28d2 d2crs18d2 cgs231.9n rd411.6 dcos31d3 rds135.0meg ls330.5n ld1041n lg2051n .modeldmosnmos(level=3vto=4kp=2.3) .modeld1d(is=.5fcjo=10pbv=100m=.5vj=.2tt=1n ) .modeld2d(is=.5fcjo=400pbv=1000m=.6vj=.6tt= 1nrs=10m) .modeld3d(is=.5fcjo=400pbv=1000m=.35vj=.6tt =400nrs=10m) .ends 5 6 7 8 4 10drain 30source 20gate don dcos d2crs d1crs rds ron doff roff rd lg ld ls m3 2 1 3 an ixys company 2401researchblvd.,suite108 fortcollins,cousa80526 9704931901fax:9704931903 email:deiinfo@directedenergy.com web:http://www.directedenergy.com doc#92000224rev6 ?2006ixysrf
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