? 2008 ixys corporation,all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 900 v v dgr t j = 25 c to 150 c, r gs = 1m 900 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c40a i dm t c = 25 c, pulse width limited by t jm 80 a i a t c = 25 c20a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 150 c 15 v/ns p d t c = 25 c 960 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (ixfk) 1.13/10 nm/lb.in. f c mounting force (ixfx) 20..120 /4.5..27 n/lb. weight to-264 10 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 900 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 210 m n-channel enhancement mode avalanche rated fast intrinsic diode IXFK40N90P ixfx40n90p v dss = 900v i d25 = 40a r ds(on) 210m t rr 300ns ds100061(10/08) polar tm power mosfet hiperfet tm features z international standard packages z avalanche rated z low package inductance z fast intrinsic diode advantages z easy to mount z space savings z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source tab = drain plus247 (ixfx) to-264 (ixfk) s g d (tab) (tab) preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXFK40N90P ixfx40n90p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 18 30 s r gi gate input resistance 1.5 c iss 14 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 896 pf c rss 58 pf t d(on) resistive switching times 53 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 50 ns t d(off) r g = 1 (external) 77 ns t f 46 ns q g(on) 230 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 70 nc q gd 100 nc r thjc 0.13 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 40 a i sm repetitive, pulse width limited by t jm 160 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 1.7 c i rm 14 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 i f = 20a, -di/dt = 100a/ s v r = 100v, v gs = 0v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2008 ixys corporation,all rights reserved IXFK40N90P ixfx40n90p fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 0123456789 v ds - volts i d - amperes v gs = 10v 9v 7 v 8 v 6 v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7 v 6 v 8 v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 0 2 4 6 8 101214161820 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 20a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 40a i d = 20a fig. 5. r ds(on) normalized to i d = 20a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFK40N90P ixfx40n90p ixys ref: f_40n90p(96)10-23-08 fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 4.55.05.56.06.57.07.58.08.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v gs - volts v ds = 450v i d = 20a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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